Nucleation and Initial-Growth Behavior of Thin-Film Deposits

A 30 nm thick quinquephenyl (5P) film was grown by molecular beam deposition on a Cu(110)(2×1)O single crystal surface. The thin film morphology was studied by light microscopy and atomic force microscopy and the crystallographic structure of the thin film was investigated by X-ray diffraction methods. The 5P molecules crystallise epitaxially with (201)5P parallel to the substrate surface (110)Cu and with their long molecular axes parallel to [001]Cu. The observed epitaxial alignment cannot be explained by lattice matching calculations. Although a clear minimum in the lattice misfit exists, it is not adapted by the epitaxial growth of 5P crystals. Instead the formation of epitaxially oriented crystallites is determined by atomic corrugations of the substrate surface, such that the initially adsorbed 5P molecules fill with its rod-like shape the periodic grooves of the substrate. Subsequent crystal growth follows the orientation and alignment of the molecules taken within the initial growth stage.

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Effects of sputtering deposited homoseed layer microstructures on crystal growth behavior and photoactivity of chemical route-derived WO3 nanorods

CrystEngComm ◽

10.1039/c9ce00779b ◽

2019 ◽

Vol 21 (38) ◽

pp. 5779-5788 ◽

Cited By ~ 2

Author(s):

Yuan-Chang Liang ◽

Chen-Shiang Hung

Keyword(s):

Thin Film ◽

Crystal Growth ◽

Growth Behavior ◽

Chemical Route ◽

Growth Properties ◽

Crystal Growth Behavior ◽

Seed Layers

The crystal growth properties of hydrothermally derived WO3 nanorods were investigated using various WO3 thin-film seed layers.

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Estimation of initial growth process of microcrystalline silicon thin film using double layered structure

Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) ◽

10.1109/pvsc.2000.916026 ◽

2002 ◽

Author(s):

T. Ishitani ◽

Y. Kimura ◽

A. Takeuchi ◽

Y. Yoshioka ◽

K. Kamisako

Keyword(s):

Thin Film ◽

Layered Structure ◽

Growth Process ◽

Initial Growth ◽

Microcrystalline Silicon ◽

Silicon Thin Film

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Growth behavior of amorphous Ca and La modified PbTiO3 thin film

Journal of Non-Crystalline Solids ◽

10.1016/j.jnoncrysol.2008.07.021 ◽

2008 ◽

Vol 354 (45-46) ◽

pp. 5014-5017

Author(s):

W.L. Li ◽

Q.G. Chi ◽

J.M. Wang ◽

W.D. Fei

Keyword(s):

Thin Film ◽

Growth Behavior ◽

Pbtio3 Thin Film

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Improvement of initial growth layer in CoCr-alloy thin film media

Journal of Magnetism and Magnetic Materials ◽

10.1016/s0304-8853(00)00817-9 ◽

2001 ◽

Vol 226-230 ◽

pp. 1610-1612 ◽

Cited By ~ 2

Author(s):

M Futamoto ◽

Y Hirayama ◽

Y Honda ◽

N Inaba

Keyword(s):

Thin Film ◽

Alloy Thin Film ◽

Initial Growth ◽

Growth Layer ◽

Cocr Alloy

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Enhanced Mobility of Organic Field-Effect Transistors with Epitaxially Grown C60 Film by in-situ Heat Treatment of the Organic Dielectric

MRS Proceedings ◽

10.1557/proc-871-i4.9 ◽

2005 ◽

Vol 871 ◽

Cited By ~ 2

Author(s):

Th. B. Singh ◽

N. Marjanovic ◽

G. J. Matt ◽

S. Günes ◽

N. S. Sariciftci ◽

...

Keyword(s):

Thin Film ◽

Electric Fields ◽

Field Effect ◽

Film Growth ◽

Field Effect Transistors ◽

Growth Conditions ◽

Initial Growth ◽

Organic Field Effect Transistors ◽

Enhanced Mobility ◽

High Electric Fields

AbstractElectron mobilities were studied as a function of thin-film growth conditions in hot wall epitaxially grown C60 based field-effect transistors. Mobilities in the range of ∼ 0.5 to 6 cm2/Vs are obtained depending on the thin-film morphology arising from the initial growth conditions. Moreover, the field-effect transistor current is determined by the morphology of the film at the interface with the dielectric, while the upper layers are less relevant to the transport. At high electric fields, a non-linear transport has been observed. This effect is assigned to be either because of the dominance of the contact resistance over the channel resistance or because of the gradual move of the Fermi level towards the band edge as more and more empty traps are filled due to charge injection.

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