On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN∕TaN∕HfO2∕SiO2 gate stack
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2015 ◽
Vol 36
(7)
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pp. 672-674
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2007 ◽
Vol 46
(4B)
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pp. 1921-1928
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2015 ◽
Vol 36
(3)
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pp. 223-225
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