Ballistic Saturation Velocity of Quasi-2D Low-Dimensional Nanoscale Field Effect Transistor (FET)

2009 ◽  
Author(s):  
Ismail Saad ◽  
M. Taghi Ahmadi ◽  
A. R. Munawar ◽  
Razali Ismail ◽  
V. K. Arora ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Saturation Velocity ◽  
Effect Transistor ◽  
Low Dimensional

Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

2018 ◽  
Vol 10 (35) ◽  
pp. 29724-29729 ◽  
Author(s):  
Janghyuk Kim ◽  
Michael A. Mastro ◽  
Marko J. Tadjer ◽  
Jihyun Kim
Keyword(s):  
Power Electronics ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Low Dimensional

Device Performance and Strain Effect of Sub-5 nm Monolayer InP Transistors

2022 ◽  
Author(s):  
Linqiang Xu ◽  
Ruge Quhe ◽  
Qiuhui Li ◽  
Shiqi Liu ◽  
Jie Yang ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Strain Effect ◽  
Device Performance ◽  
Saturation Velocity ◽  
Effect Transistor

Indium phosphide (InP) has higher electron mobility, electron saturation velocity, and drain current than silicon (Si), and the ultra-thin (UT) InP field-effect transistor (FET) probably possesses a better device performance...

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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