Superconducting properties of getter‐sputtered V3Al thin films as a function of sputtering gas, pressure, and substrate temperature

ABSTRACTPLZT(X/70/100) thin films on MgO(100), Pt/Ti/MgO(100), and Pt/Ti/Si(100) have been prepared by RF-magnetron sputtering process from sintered target with compositions of PLZT(X/70/100), where X=5, 10, and 15, respectively. The effects of substrate temperature, substrate and gas pressure on deposited thin films were studied. Crystalline and surface characterization was analyzed using XRD, SEM, AES, and AFM. X-ray rocking curves were measured to examine the film orientation. It was observed that the gas pressure was the dominant influence on having (001) preferred orientation. As a result, the degree of c-axis orientation increased as gas pressure decreased.

Download Full-text

As‐Grown Superconductivity of Bi‐System Thin Films Prepared by Magnetron Sputtering with Three Pb Doped Targets: (Bi 1.6 Pb0.4) 1 + a (SrCa)2 Cu3 O x, (Bi 1.6 Pb0.4) 1 (SrCa)2+c Cu3 Ox and (Bi 1.6 Pb0.4) 1 (SrCa)2Cu3+cOx (a = 0.5, b= 1,c= 1.5)

MRS Proceedings ◽

10.1557/proc-169-663 ◽

1989 ◽

Vol 169 ◽

Cited By ~ 3

Author(s):

Ken'ichi Kuroda ◽

Masami Tanioku ◽

Kazuyoshi Kojima ◽

Koichi Hamanaka

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Substrate Temperature ◽

Rf Magnetron Sputtering ◽

Gas Pressure ◽

Substrate Temperatures

AbstractSuperconducting Bi system thin films have been formed on MgO(100) substrates by RF magnetron sputtering from three Pb‐doped targets: Bi2.4 Pb0.6 Sr2 Ca2 CU3 O x ,Bi 1.6 Pb0.4 Sr3 Ca3 CU3 O x and Bi 1.6 Pb 0.4 Sr2 Ca2 CU4.5 O x. The as‐grown films formed at substrate temperatures above 600 °C showed superconductivity, though, they did not contain Pb. The film, formed at 660°C and kept at the same substrate temperature and gas pressure as the sputtering conditions for 5 h after deposition, showed a resistivity drop at 115 K and zero resistivity at 83 K. The Jc value of the film was 4x105 A/cm2 at 77 K and 3x107 A/cm 2 at 20 K.

Download Full-text

Superconducting Properties of Single-crystal NbN Thin Films Deposited at Ambient Substrate Temperature

Advances in Superconductivity VII ◽

10.1007/978-4-431-68535-7_225 ◽

1995 ◽

pp. 991-994

Author(s):

Zhen Wang ◽

Akira Kawakami ◽

Yoshinori Uzawa ◽

Bokuji Komiyama

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Single Crystal ◽

Superconducting Properties

Download Full-text

Characterization of DyBa2Cu3O7+δ thin Films Prepared by Ozone-Assisted Co-Evaporation Technique

MRS Proceedings ◽

10.1557/proc-275-519 ◽

1992 ◽

Vol 275 ◽

Author(s):

T. J. Hsieh ◽

R. V. Smilgys ◽

C. K. Chiang ◽

S. W. Robey ◽

R. J. Arsenault ◽

...

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Substrate Temperature ◽

Critical Currents ◽

Superconducting Thin Films ◽

Superconducting Properties ◽

Critical Temperatures ◽

Oriented Films ◽

Evaporation Technique

ABSTRACTSuperconducting thin films of DyBa2Cu3O7-δ_ are deposited on MgO(100) substrates by an ozone-assisted coevaporation technique. At a relatively low substrate temperature (610°C) and with a fixed ozone flux we prepare highly c-axis oriented films with very good superconducting properties. The critical temperatures of the films are commonly above 85 K with critical currents above 10 5 A/cm2. We report on composition, microstructure, electrical resistivity and critical current of two good films.

Download Full-text

Surface and Interface Microstructure of Epitaxial Ferroelectric (Ba, Sr)Tio3 Thin Films

MRS Proceedings ◽

10.1557/proc-388-411 ◽

1995 ◽

Vol 388 ◽

Author(s):

V. A. Alyoshin ◽

E. V. Sviridov ◽

Vi. M. Mukhortov ◽

I. N. Zakharchenko ◽

V. P. Dudkevich

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Cross Section ◽

Three Dimensional ◽

Gas Pressure ◽

Smooth Surfaces ◽

Interface Microstructure ◽

Two Dimensional ◽

Surface And Interface ◽

Deposition Conditions

AbstractSurface and cross-section relief evolution of ferroelectric epitaxial (Ba,Sr)Ti03 films rf-sputtered on (001) MgO crystal cleavage surfaces versus the oxygen worKing gas pressure P and substrate temperature T were studied. Specific features of both three-dimensional and two-dimensional epitaxy mechanisms corresponding to various deposition conditions were revealed. Difference between low and high P-T-value 3D epitaxy was established. the deposition of films with mirror-smooth surfaces and perfect interfaces is shown to be possible.

Download Full-text