Stable ferromagnetism in p-type carbon-doped ZnO nanoneedles

2009 ◽  
Vol 95 (13) ◽  
pp. 133103 ◽  
Author(s):  
T. S. Herng ◽  
S. P. Lau ◽  
C. S. Wei ◽  
L. Wang ◽  
B. C. Zhao ◽  
...  
Keyword(s):  
2009 ◽  
Vol 95 (1) ◽  
pp. 012505 ◽  
Author(s):  
T. S. Herng ◽  
S. P. Lau ◽  
L. Wang ◽  
B. C. Zhao ◽  
S. F. Yu ◽  
...  

2007 ◽  
Vol 91 (7) ◽  
pp. 072101 ◽  
Author(s):  
S. T. Tan ◽  
X. W. Sun ◽  
Z. G. Yu ◽  
P. Wu ◽  
G. Q. Lo ◽  
...  

1990 ◽  
Vol 29 (Part 2, No. 10) ◽  
pp. L1731-L1734 ◽  
Author(s):  
Shinji Nozaki ◽  
Ryuji Miyake ◽  
Takumi Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 338
Author(s):  
Hak Hyeon Lee ◽  
Dong Su Kim ◽  
Ji Hoon Choi ◽  
Young Been Kim ◽  
Sung Hyeon Jung ◽  
...  

An effective strategy for improving the charge transport efficiency of p-type Cu2O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in the built-in potential at the Cu2O/AZO interface as well as an excellent conformal coating with a thin thickness on irregular Cu2O. Considering the thin thickness of the AZO overlayers, it is expected that the composition of the Al and the layer stacking sequence in the ALD process will significantly influence the charge transport behavior and the photoelectrochemical (PEC) performance. We designed various stacking orders of AZO overlayers where the stacking layers consisted of Al2O3 (or Al) and ZnO using the atomically controlled ALD process. Al doping in ZnO results in a wide bandgap and does not degrade the absorption efficiency of Cu2O. The best PEC performance was obtained for the sample with an AZO overlayer containing conductive Al layers in the bottom and top regions. The Cu2O/AZO/TiO2/Pt photoelectrode with this overlayer exhibits an open circuit potential of 0.63 V and maintains a high cathodic photocurrent value of approximately −3.2 mA cm−2 at 0 VRHE for over 100 min.


2009 ◽  
Vol 79-82 ◽  
pp. 1253-1256 ◽  
Author(s):  
Li Guan ◽  
Qiang Li ◽  
Xu Li ◽  
Jian Xin Guo ◽  
Bo Geng ◽  
...  

In the present paper, the lattice structure, band structure and density of state of pure and P-doped ZnO are calculated by first-principle method based on density functional theory. By analyzing the Mulliken charge overlap population and bond length, it is found that the bond of P-Zn is longer and stronger than O-Zn bond for PO-ZnO. But for PZn-ZnO, the O-P bond becomes shorter and more powerful than O-Zn bond. Also, weak O-O bonds are formed in this case. Our results show that the final total energy of PO-ZnO is lower than PZn-ZnO. The lattice structure of PO-ZnO is more stability than PZn-ZnO. For PO-ZnO, The Fermi level moves into the valence band, which expresses that the holes appear on the top of valence band and thus the PO-ZnO exhibits p-type conductivity. For PZn-ZnO, the Fermi level moves up to the conductor band and the total density of states shifts to the lower energy region, thus PZn-ZnO shows the n-type conductivity.


1995 ◽  
Vol 150 ◽  
pp. 221-226
Author(s):  
T. Tomioka ◽  
N. Okamoto ◽  
H. Ando ◽  
S. Yamaura ◽  
T. Fujii

2017 ◽  
Vol 41 (17) ◽  
pp. 9314-9320 ◽  
Author(s):  
Sajid Ali Ansari ◽  
S. G. Ansari ◽  
H. Foaud ◽  
Moo Hwan Cho

Design of carbon doped ZnO nanostructures towards enhanced visible light driven photocatalytic and photoelectrochemical performance.


2013 ◽  
Vol 100 ◽  
pp. 78-81 ◽  
Author(s):  
M.A. Myers ◽  
J.H. Lee ◽  
H. Wang
Keyword(s):  

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