Electrical Properties of GaAs Implanted with High Energy (100meV) 28Si and 120Sn Ions

2021 ◽  
pp. 77-92
Author(s):  
يوسف بيار علي ◽  
سلوان كمال جميل العاني ◽  
بريج موهن ارورا
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Annealing Treatment ◽  
High Energy ◽  
Strong Nonlinearity ◽  
Conduction Mechanisms ◽  
Gaas Substrates ◽  
Current Voltage ◽  
Back Ward

Single crystal n-GaAs substrates have been implanted at 300 K with 100 MeV 28Si and 120Sn ions to a dose of 1x1018ions/m2 independently. The electrical properties of these samples has been investigated and compared after implantation and annealing up to 850 °C by current voltage (I-V) measurements. It has been observed that the I-V curves for the samples implanted with 28Si ions show p-n junction like characteristics which then show a linear I-V characteristics for the annealing treatment between 150-550 °C. Annealing the samples at 650 °C results in a typical diode like I-V characteristics which become less non-linear after further annealing at 750 °C. Further annealing at 850 °C results in to a back ward diode like behavior. However the I-V curves for the samples implanted with 120Sn ions and annealed up to 450C were linear which then show a weak non linearity for the annealing treatments between 550C-750C. After 850C annealing the samples show a strong nonlinearity typical of a p-n junction. The temperature dependence of resistance of both 28Si and 120Sn implanted GaAs samples after implantation and different annealing steps are investigated and the possible conduction mechanisms are discussed.

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

2008 ◽  
Vol 600-603 ◽  
pp. 1341-1344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Valeria Puglisi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Contacts ◽  
Electrical Behavior ◽  
Atomic Force ◽  
Current Voltage ◽  
Local Current

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.

scholarly journals Poole-Frenkel Conduction in Cu/Nano-SnO2/Cu Arrangement

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
Hossein Mahmoudi Chenari ◽  
Hassan Sedghi ◽  
Mohammad Talebian ◽  
Mir Maqsoud Golzan ◽  
Ali Hassanzadeh
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Tin Dioxide ◽  
Current Flow ◽  
Sandwich Structures ◽  
Conduction Band Edge ◽  
Flow Mechanism ◽  
Conduction Mechanisms ◽  
Current Voltage ◽  
Limited Conduction

It is well known that metal/Tin-dioxide/metal sandwich structures exhibit a field-assisted lowering of the potential barrier between donor-like center and the conduction band edge, known as the Poole-Frenkel effect. This behavior is indicated by a linear dependence of Iog  on , where is the current density, and is the applied voltage. In this study, the electrical properties of Cu/nano-SnO2/Cu sandwich structures were investigated through current-voltage measurements at room temperature. Also, an attempt to explore the governing current flow mechanism was tried. Our results indicate that noticeable feature appearing clearly in the current-voltage characterization is the Poole-Frenkel and space-charge-limited conduction mechanisms.

Current–Voltage Characteristics of Single Crystal Cu2O Diodes

1975 ◽  
Vol 53 (15) ◽  
pp. 1408-1414
Author(s):  
K. T. Chee ◽  
F. L. Weichman
Keyword(s):  
Single Crystal ◽  
Space Charge ◽  
Temperature Dependence ◽  
High Resistivity ◽  
Valence Band Edge ◽  
Limited Region ◽  
Trap Energy ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Shallow Traps

The I–V characteristics of Cu2O diodes, made from high resistivity single crystal Cu2O bonded to copper, are reported. The forward I–V characteristics below 60 °C are found to exhibit [Formula: see text], [Formula: see text], and [Formula: see text] regions (appearing in that order as the voltage increases), while at higher temperatures the [Formula: see text] region disappears. The assumption of a space–charge limited region permits the explanation of the data.The temperature dependence of the I–V characteristics in the [Formula: see text] region is studied in greater detail and is explained by the existence of shallow traps with trap energy 0.26 eV above the valence band edge.

Experiments on REM and SREM using a Tem/Stem Microscope with a Configurable Angle-Resolving Detector

1990 ◽  
Vol 48 (1) ◽  
pp. 338-339
Author(s):  
H. Banzhof ◽  
I. Daberkow
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Crystal Surface ◽  
High Energy ◽  
Contrast Effects ◽  
Atomic Steps ◽  
Single Crystal Surfaces ◽  
Platinum Single Crystal ◽  
Reflection Electron Microscopy ◽  
Beam Reflection

A Philips EM 420 electron microscope equipped with a field emission gun and an external STEM unit was used to compare images of single crystal surfaces taken by conventional reflection electron microscopy (REM) and scanning reflection electron microscopy (SREM). In addition an angle-resolving detector system developed by Daberkow and Herrmann was used to record SREM images with the detector shape adjusted to different details of the convergent beam reflection high energy electron diffraction (CBRHEED) pattern.Platinum single crystal spheres with smooth facets, prepared by melting a thin Pt wire in an oxyhydrogen flame, served as objects. Fig. 1 gives a conventional REM image of a (111)Pt single crystal surface, while Fig. 2 shows a SREM record of the same area. Both images were taken with the (555) reflection near the azimuth. A comparison shows that the contrast effects of atomic steps are similar for both techniques, although the depth of focus of the SREM image is reduced as a result of the large illuminating aperture. But differences are observed at the lengthened images of small depressions and protrusions formed by atomic steps, which give a symmetrical contrast profile in the REM image, while an asymmetric black-white contrast is observed in the SREM micrograph. Furthermore the irregular structures which may be seen in the middle of Fig. 2 are not visible in the REM image, although it was taken after the SREM record.

Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1−xGex (x = 0-0.3)

2021 ◽  
Author(s):  
Woohui Lee ◽  
Changmin Lee ◽  
Jinyong Kim ◽  
Jehoon Lee ◽  
Deokjoon Eom ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Treatment ◽  
Atomic Layer ◽  
Alloy Film ◽  
Electrical Characteristics

To understand the effect of H2S pre-annealing treatment on a Si1-xGex alloy film, the interfacial and electrical characteristics of atomic-layer-deposited HfO2/Si1-xGex were studied while varying the Ge concentration (x value)...

scholarly journals Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 697
Author(s):  
Yu-He Liu ◽  
Xiao-Yan Liu ◽  
Hui Sun ◽  
Bo Dai ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Loss ◽  
Single Crystal ◽  
Oxygen Stoichiometry ◽  
High Resistivity ◽  
Edge Structure ◽  
Glass Substrates ◽  
Lower Resistivity

Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have been investigated. It was found that the resistivity of NiO thin films strongly depends on oxygen stoichiometry. Nearly perfect stoichiometry yields extremely high resistivity. In contrast, off-stoichiometric thin films possess much lower resistivity, especially for oxygen-rich composition. A side-by-side comparison of energy loss near the edge structure spectra of Ni L3 edges between our NiO thin films and other theoretical spectra rules out the existence of Ni3+ in NiO thin films, which contradicts the traditional hypothesis. In addition, epitaxial NiO thin films grown on Al2O3 (0001) single crystal substrates exhibit much higher resistivity than those on glass substrates, even if they are deposited simultaneously. This feature indicates the microstructure dependence of electrical properties.

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