Low-voltage electric-double-layer paper transistors gated by microporous SiO2 processed at room temperature

2009 ◽  
Vol 95 (22) ◽  
pp. 222108 ◽  
Author(s):  
Jia Sun ◽  
Qing Wan ◽  
Aixia Lu ◽  
Jie Jiang
2011 ◽  
Vol 98 (9) ◽  
pp. 093506 ◽  
Author(s):  
Mingzhi Dai ◽  
Guodong Wu ◽  
Yue Yang ◽  
Jie Jiang ◽  
Li Li ◽  
...  

RSC Advances ◽  
2021 ◽  
Vol 11 (29) ◽  
pp. 17910-17913
Author(s):  
Liuhui Lei ◽  
Yuanyuan Tan ◽  
Xing Yuan ◽  
Wei Dou ◽  
Jiale Zhang ◽  
...  

Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO4 (IGZO) channel are fabricated at room temperature.


RSC Advances ◽  
2020 ◽  
Vol 10 (14) ◽  
pp. 8093-8096
Author(s):  
Wei Dou ◽  
Yuanyuan Tan

Dual gate (DG) low-voltage transparent electric-double-layer (EDL) thin-film transistors (TFTs) with microporous-SiO2 for both top and bottom dielectrics have been fabricated, both dielectrics were deposited by plasma-enhanced chemical vapor deposition (PECVD).


2014 ◽  
Vol 35 (4) ◽  
pp. 482-484 ◽  
Author(s):  
Ning Liu ◽  
Yanghui Liu ◽  
Liqiang Zhu ◽  
Yi Shi ◽  
Qing Wan

2017 ◽  
Vol 5 (40) ◽  
pp. 10609-10614 ◽  
Author(s):  
Yunqiu Wang ◽  
Yu-Xi Song ◽  
Wen-Yi Tong ◽  
Yuanyuan Zhang ◽  
Ruijuan Qi ◽  
...  

Electric-field manipulation of magnetism in nickel coaxial cylinders with an electric double layer capacitor (EDLC) structure, with potential applications in spin capacitors.


2011 ◽  
Vol 32 (4) ◽  
pp. 512-514 ◽  
Author(s):  
Mingzhi Dai ◽  
Jie Jiang ◽  
Yue Yang ◽  
Guodong Wu ◽  
Qing Wan

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