AbstractIn the use of single/few electrons in distributed storage for non-volatile, low power, and fast memories, providing statistical reproducibility at the nanoscale is a key challenge since relative variance has dependence and the devices operate with limited number of storage sites. We have used defects at interfaces of dielectrics to evaluate this reproducibility and the performance of memories. These experiments show that nearly 100 electrons can be stored at 30 nm dimensions, sufficient for reproducibility, and that a minimum of tunneling oxide thickness is required to assure reliable retention characteristics. Different tunneling oxide thicknesses and the effect of LDD process are investigated to draw these conclusions.
