InGaAsPn‐channel inversion‐mode metal‐insulator‐semiconductor field‐effect transistor with low interface state density

Journal of Applied Physics ◽

10.1063/1.328582 ◽

1981 ◽

Vol 52 (10) ◽

pp. 6386-6394 ◽

Author(s):

Yukinobu Shinoda ◽

Takeshi Kobayashi

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Inversion Mode ◽

Effect Transistor

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Surface state density distribution at an Al2O3‐InP metal‐insulator‐semiconductor field‐effect transistor measured by the charge pumping technique

Applied Physics Letters ◽

10.1063/1.97612 ◽

1986 ◽

Vol 49 (6) ◽

pp. 351-353 ◽

Author(s):

Takeshi Kobayashi ◽

Tohru Ichikawa ◽

Tetsurou Sawai

Keyword(s):

Density Distribution ◽

Surface State ◽

Field Effect ◽

Field Effect Transistor ◽

State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Charge Pumping ◽

Surface State Density ◽

Effect Transistor

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Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.1428085 ◽

2002 ◽

Vol 91 (3) ◽

pp. 1568-1571 ◽

Author(s):

Shinsuke Harada ◽

Ryoji Kosugi ◽

Junji Senzaki ◽

Won-Ju Cho ◽

Kenji Fukuda ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Effect Transistor

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Effect of pyrolytic Al2O3deposition temperature on inversion‐mode InP metal‐insulator‐semiconductor field–effect transistor

Journal of Applied Physics ◽

10.1063/1.328593 ◽

1981 ◽

Vol 52 (10) ◽

pp. 6434-6436 ◽

Author(s):

Takeshi Kobayashi ◽

Masamichi Okamura ◽

Eiichi Yamaguchi ◽

Yukinobu Shinoda ◽

Yukihiro Hirota

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Inversion Mode ◽

Effect Transistor

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The gas sensitivity of a metal-insulator-semiconductor field-effect-transistor based on Langmuir–Blodgett films of a new asymmetrically substituted phthalocyanine

Thin Solid Films ◽

10.1016/s0040-6090(99)01081-0 ◽

2000 ◽

Vol 360 (1-2) ◽

pp. 256-260 ◽

Author(s):

Wenping Hu ◽

Yunqi Liu ◽

Yu Xu ◽

Shenggao Liu ◽

Shuqin Zhou ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gas Sensitivity ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Langmuir Blodgett ◽

Langmuir Blodgett Films ◽

Effect Transistor

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TCAD simulation of a breakdown-enhanced double channel GaN metal–insulator–semiconductor field-effect transistor with a P-buried layer

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab81b3 ◽

2020 ◽

Vol 35 (6) ◽

pp. 065012

Author(s):

Xin-Xing Fei ◽

Ying Wang ◽

Xin Luo ◽

Meng-Tian Bao ◽

Cheng-Hao Yu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor ◽

Buried Layer ◽

Tcad Simulation ◽

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Monolithic integration of a very low threshold GaInAsP laser and metal‐insulator‐semiconductor field‐effect transistor on semi‐insulating InP

Applied Physics Letters ◽

10.1063/1.93226 ◽

1982 ◽

Vol 40 (8) ◽

pp. 643-645 ◽

Author(s):

U. Koren ◽

K. L. Yu ◽

T. R. Chen ◽

N. Bar‐Chaim ◽

S. Margalit ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Low Threshold ◽

Effect Transistor

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A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor

Semiconductor Science and Technology ◽

10.1088/0268-1242/16/12/309 ◽

2001 ◽

Vol 16 (12) ◽

pp. 997-1001 ◽

Author(s):

Kun-Wei Lin ◽

Chin-Chuan Cheng ◽

Shiou-Ying Cheng ◽

Kuo-Hui Yu ◽

Chih-Kai Wang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Hydrogen Sensor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor

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Effect of photochemical etching on interface state density of Ga0.47In0.53As metal/insulator/semiconductor diodes

Electronics Letters ◽

10.1049/el:19870630 ◽

1987 ◽

Vol 23 (17) ◽

pp. 891 ◽

Author(s):

A. Aoki ◽

S. Miyoshi ◽

J. Shirafuji

Keyword(s):

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Photochemical Etching

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Effects of interface state density on the carrier transport and performance of metal-insulator-semiconductor (MIS) type thin film solar cells

Journal of Physics Conference Series ◽

10.1088/1742-6596/1481/1/012005 ◽

2020 ◽

Vol 1481 ◽

pp. 012005

Author(s):

Fandi Oktasendra ◽

Rahmat Hidayat ◽

Rizky Indra Utama

Keyword(s):

Thin Film ◽

Solar Cells ◽

Carrier Transport ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Thin Film Solar Cells ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

And Performance

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A Reduction of Defects in the SiO2-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.777 ◽

2012 ◽

Vol 717-720 ◽

pp. 777-780

Author(s):

Kevin M. Speer ◽

Philip G. Neudeck ◽

Mehran Mehregany

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Interface State ◽

State Density ◽

Vacuum Field ◽

Semiconductor Surface ◽

Fundamental Properties ◽

Voltage Instability ◽

Effect Transistor ◽

State Densities

The SiC vacuum field-effect transistor (VacFET) was first reported in 2010 as a diagnostic tool for characterizing the fundamental properties of the inverted SiC semiconductor surface without confounding issues associated with thermal oxidation. In this paper, interface state densities are extracted from measurements of threshold voltage instability on a SiC VacFET and a SiC MOSFET. It is shown that removing the oxide can reduce the interface state density by more than 70%.

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