Schottky contact barrier height modification by ion implantation of Al into GaAs

In this work, we studied the effect of surface preparation and substrate temperature during sputter deposition of Schottky contacts on N-GaN/SiC/Si substrates, looking at parameters such as on-resistance, reverse leakage, and contact barrier height. Ti, Ni and Mo were sputtered to form the contacts, and we characterized the I-V curves with the different substrate temperatures during the sputtering as shown in Figure 1. For the Ti Schottky contact, the substrate temperature of 100oC during the sputtering demonstrates the minimum series resistance with Rs about 0.04cm2, while temperatures greater than 3000C increased reverse bias leakage. The Mott-Schottky plot reveals a barrier height of 1.2V for this contact. Results for sputtered Ni contacts using different substrate temperatures will also be presented, as well as the effect of Ar sputter cleaning before contact deposition.

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Effect of Band Offset, Recombination Mechanisms, and Contact Barrier Height in the Performance of Perovskite Solar Cells

10.1115/1.0001335v ◽

2021 ◽

Author(s):

Jiawei Gong

Keyword(s):

Solar Cells ◽

Barrier Height ◽

Perovskite Solar Cells ◽

Band Offset ◽

Contact Barrier

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Using a NiZn solid solution layer to produce high-barrier height Schottky contact to semipolar (20–21) n-type GaN

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2020.157003 ◽

2021 ◽

Vol 852 ◽

pp. 157003

Author(s):

Jung-Suk Cha ◽

Tae-Ju Lee ◽

Tae-Yeon Seong

Keyword(s):

Solid Solution ◽

Barrier Height ◽

Schottky Contact ◽

Solid Solution Layer ◽

Solution Layer

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A vertical optimization method for a simultaneous extraction of the five parameters characterizing the barrier height in the Mo/4H–SiC Schottky contact

Indian Journal of Physics ◽

10.1007/s12648-019-01393-y ◽

2019 ◽

Vol 93 (9) ◽

pp. 1155-1162 ◽

Cited By ~ 3

Author(s):

S. Toumi ◽

Z. Ouennoughi

Keyword(s):

Barrier Height ◽

Schottky Contact ◽

Optimization Method ◽

Simultaneous Extraction

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Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.1142 ◽

2014 ◽

Vol 778-780 ◽

pp. 1142-1145 ◽

Cited By ~ 5

Author(s):

Filippo Giannazzo ◽

Stefan Hertel ◽

Andreas Albert ◽

Antonino La Magna ◽

Fabrizio Roccaforte ◽

...

Keyword(s):

Silicon Carbide ◽

Schottky Barrier ◽

Barrier Height ◽

Photoelectron Spectroscopy ◽

Schottky Contact ◽

Epitaxial Graphene ◽

Schottky Contacts ◽

Specific Contact Resistance ◽

Monolayer Graphene ◽

Conductive Atomic Force Microscopy

Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] ≈ 1015 cm-3) SiC, and a specific contact resistance as low as ρC = 5.9×10-6 Ωcm2 can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level photoelectron spectroscopy (XPS). This value, however, strongly deviates from the respective value of less than 1 eV determined from I-V measurements. It was found from conductive atomic force microscopy (C-AFM) that the Schottky barrier is locally lowered on other crystal facets located at substrate step edges. For very small Schottky contacts, the barrier height extracted from I-V curves approaches the value of 1.5 eV from C-V and XPS.

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