3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been
investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as
source gases. The deposition rate of the films increased monotonously and the microstructures of
the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of
SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C,
which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects
of C3H8 on the microstructures of the films have been investigated by reducing the concentration of
C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and
SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net
flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a
higher deposition rate and lower substrate temperature than that on Si (100).
Immersing ampoule Sankaranarayanan–Ramasamy (ISR) Method: Unidirectional High-Quality Single Crystal Growth