Excimer‐laser annealed ohmic contacts ton‐GaAs substrates through an ultrathin reacted layer

1987 ◽  
Vol 62 (6) ◽  
pp. 2381-2386 ◽  
Author(s):  
Syunji Imanaga ◽  
Hiroji Kawai ◽  
Kazuo Kajiwara ◽  
Kunio Kaneko ◽  
Naozo Watanabe
Keyword(s):  
Excimer Laser ◽  
Ohmic Contacts ◽  
Gaas Substrates

Laser annealed ohmic contact to n+-GaAs

1983 ◽  
Vol 61 (8) ◽  
pp. 1218-1221 ◽  
Author(s):  
P. Sircar
Keyword(s):  
Surface Morphology ◽  
Contact Resistance ◽  
Excimer Laser ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Laser Annealing ◽  
Furnace Annealing ◽  
Gaas Substrates ◽  
Thin Nickel ◽  
Lower Contact

Ohmic contacts were made on n+-GaAs substrates by evaporating a gold–germanium eutectic film with or without a thin nickel overlayer and then alloying these samples either in a furnace or by means of an excimer laser. It is found that laser annealing gives a better surface morphology and a lower contact resistance than furnace annealing.

The Development of Solid Phase Regrowth on GaAs and its applications

1993 ◽  
Vol 319 ◽  
Author(s):  
L. C. Wang
Keyword(s):  
Ohmic Contacts ◽  
Solid Phase ◽  
Low Loss ◽  
Ohmic Behavior ◽  
Gaas Substrates ◽  
Layer Structures ◽  
Solid Phase Reactions ◽  
Solid Phase Regrowth ◽  
P Type ◽  
Ohmic Contact Formation

AbstractA solid phase regrowth process on GaAs has been observed in Pd- and Ni- based bi-layer structures, e.g. the Si/Ni, the Ge/Pd, the In/Pd, and the Sb/Pd structures. Due to the regrowth, uniform epitaxial layers of Ge, GaAs, InxGa1-xAs, and GaSbl-xAsx on GaAs substrates by solid phase reactions can achieved. The model of this regrowth process will be presented. Based on this regrowth mechanism, a series of non-spiking planar ohmic contacts on n and p type GaAs have been developed. Low contact resistivity in the range of mid 10−7 Ω-cm2 was obtained. The ohmic contact formation mechanism of these contacts will also be discussed. All the studies suggest that the ohmic behavior is a result of the formation of an n+ or p+ surface layer via solid phase reactions. The regrowth process has also been utilized to achieve compositional disordering of GaAs/AlGaAs superlattices, and low loss AlGaAs/GaAs waveguide has been obtained.

Structure and Electrical Properties of Cu/Ge Ohmic Contacts

1995 ◽  
Vol 402 ◽  
Author(s):  
S. Oktyabrsky ◽  
M. O. Aboelfotoh ◽  
J. Narayan
Keyword(s):  
Ohmic Contacts ◽  
Contact Layer ◽  
Interfacial Microstructure ◽  
Contact Resistivity ◽  
Electrical Characteristics ◽  
Secondary Phases ◽  
Gaas Substrates ◽  
Wide Range ◽  
Specific Contact ◽  
Average Lattice

AbstractChemistry, crystal structure, interfacial microstructure and electrical characteristics of novel Cu-Ge alloyed ohmic contacts to n-type GaAs with a very low specific contact resistivity ((4–6)×10−7 Ω·cm2 for n∼1×1017 cm−3) were investigated by various methods. The Cu-Ge alloys with a wide range of Ge concentration, from 15 to 40 at %, were prepared by depositing sequentially Cu and Ge layers (or vise versa) onto GaAs substrates at room temperature followed by annealing at 400°C. It is shown that Cu reacts only with Ge to form the ξ and ε1-Cu3Ge phases. The latter has an orthorhombic structure with average lattice parameters: a = 5.301 Å, bo = 4.204 Å, co = 4.555 Å, arising from the parent hexagonal ξ-phase by Cu-Ge ordering along ao. The interface with GaAs is atomically sharp and free from secondary phases. The ε1-Cu3Ge ordered phase which is chemically inert with respect to GaAs, is believed to be responsible for high thermal stability (up to 450°C), interface sharpness, high contact layer uniformity and low specific resistivity of 6 μΩ cm. Formation of the Cu-Ge phases creates a highly doped n+-GaAs surface layer which leads to the low contact resistivity.

Laser Processed Silicides for GaAs Hemts

1989 ◽  
Vol 158 ◽  
Author(s):  
W.T. Anderson ◽  
A. Christou ◽  
P.E. Thompson ◽  
J.L. Davis ◽  
C.R. Gossett ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Refractory Metal ◽  
Ohmic Contacts ◽  
Laser Annealing ◽  
Metal Silicide ◽  
Rf Power ◽  
Excimer Laser Annealing ◽  
Metal Gates ◽  
Sputter Deposited ◽  
Gate Resistance

ABSTRACTLaser annealed refractory metal gates and Ohmic contacts have been developed for GaAs FETs and HEMTs fabricated on MBE layers grown on laser desorbed substrates. Amorphous refractory metal silicide films were sputter deposited by a method in which the RF power to separate refractory metal and silicon targets were set at predetermined deposition ratesand the substrates were rotated with respect to the sputter targets receiving a 0.2 to 0.5 nm film on each pass. The gate resistance was reduced and Ohmic contacts formed by pulsed excimer laser annealing.

Low resistance nonalloyed Ni∕Au Ohmic contacts to p-GaN irradiated by KrF excimer laser

2006 ◽  
Vol 89 (4) ◽  
pp. 042107 ◽  
Author(s):  
Min-Suk Oh ◽  
Dae-Kue Hwang ◽  
Jae-Hong Lim ◽  
Chang-Goo Kang ◽  
Seong-Ju Park
Keyword(s):  
Excimer Laser ◽  
Ohmic Contacts ◽  
Low Resistance ◽  
Krf Excimer Laser

Excimer-Laser Removal of $\bf SiO_{2}$ Patterns from GaAs Substrates

1994 ◽  
Vol 33 (Part 2, No. 3A) ◽  
pp. L324-L327 ◽  
Author(s):  
Yong-Feng Lu ◽  
Mikio Takai ◽  
Takao Shiokawa ◽  
Yoshinobu Aoyagi
Keyword(s):  
Excimer Laser ◽  
Gaas Substrates

I-V Characteristics and Interface Properties of Al-Si(P) Contacts by the Krf Excimer Laser Induced Recrystallization

1992 ◽  
Vol 283 ◽  
Author(s):  
K. Sohn ◽  
H. Lee ◽  
D. A. Hensley
Keyword(s):  
Excimer Laser ◽  
Ohmic Contacts ◽  
Schottky Diodes ◽  
Interface Properties ◽  
Auger Analysis ◽  
Effective Barrier ◽  
Thermionic Field Emission ◽  
Krf Excimer Laser ◽  
The One ◽  
P Type

ABSTRACTAl was deposited on the both sides of p-type Si by the sputtering, and the pulsed KrF excimer laser was irradiated on the one side and both sides of Al dot contacts. Due to the thin-high doping recrystallized layer, the transitions from the Schottky diodes to the ohmic contacts via backward diodes were observed in I-V measurement. Good N-shape negative resistances and notches were observed in the diodes, and ohmic contacts. Possible interpretations of the orgin of these phenomena are discussed. And, the simple model of the effective barrier height reduction under the thermionic field emission was developed using WKB approximation, and tunneling theory. By the depth Auger analysis, Al, and Si profiles near Al-Si interface after the laser irradiation were observed.

Ohmic contacts of ZnO/SnO2 equal-cosubstituted In2O3 films to n-InP and p-GaAs

RSC Advances ◽  
2015 ◽  
Vol 5 (119) ◽  
pp. 98194-98202
Author(s):  
Xiufeng Tang ◽  
Chunhan Hseih ◽  
Fang Ou ◽  
Seng-Tiong Ho
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
Gaas Substrates

ZnO/SnO2 equal-cosubstituted In2O3 (ZITO) films were deposited by ion beam assisted deposition onto n-InP and p-GaAs substrates.

Stable Solid-Phase Ohmic Contacts to n-GaAs with Diffusion Barriers

1988 ◽  
Vol 126 ◽  
Author(s):  
E. Kolawa ◽  
C. W. Nieh ◽  
W. Flick ◽  
J. Molarius ◽  
M-A. Nicolet
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Diffusion Barriers ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Resistivity Measurements ◽  
Gaas Substrates ◽  
Transmission Electron

ABSTRACTContacts to GaAs substrates with n-type epilayers formed by GaAs/Ni/Ge/WN/Au, GaAs/Ni/Ge/Ni/WN/Au and GaAs/Ge/ Ni/WN/Au systems were investigated. Ohmic contacts in these systems were formed by a solid-phase reaction between Ni/Ge and GaAs. Interfacial reaction and electrical properties of these contacts are characterized by backscattering spectrometry, transmission electron microscopy and contact resistivity measurements. Resistivities in the 10−δ Ω cm range are achieved.

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