Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks

Journal of Applied Physics ◽

10.1063/1.5031025 ◽

2018 ◽

Vol 124 (22) ◽

pp. 224102 ◽

Author(s):

S. M. Pazos ◽

F. L. Aguirre ◽

K. Tang ◽

P. McIntyre ◽

F. Palumbo

Keyword(s):

Metal Oxide ◽

Frequency Dispersion ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Hot Carrier ◽

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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied Physics Letters ◽

10.1063/1.2189456 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132107 ◽

Author(s):

A. Ritenour ◽

A. Khakifirooz ◽

D. A. Antoniadis ◽

R. Z. Lei ◽

W. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

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Investigation of band structure at metal-gate/high-k interface of metal oxide semiconductor device with high-k and metal gate stack

2012 12th International Workshop on Junction Technology ◽

10.1109/iwjt.2012.6212837 ◽

2012 ◽

Author(s):

Xiaolei Wang ◽

Wenwu Wang ◽

Kai Han ◽

Hong Yang ◽

Jing Zhang ◽

...

Keyword(s):

Band Structure ◽

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159330 ◽

2009 ◽

Author(s):

Hock-Chun Chin ◽

Xinke Liu ◽

Leng-Seow Tan ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Cmos Compatible ◽

High K Dielectric

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Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.061503 ◽

2011 ◽

Vol 50 (6R) ◽

pp. 061503 ◽

Author(s):

Ryosuke Iijima ◽

Lisa F. Edge ◽

John Bruley ◽

Vamsi Paruchuri ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Substrates ◽

High K ◽

Orientation Difference

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Effect of La2O3Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC10 ◽

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Hot Carrier ◽

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Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure

Applied Physics Letters ◽

10.1063/1.3399359 ◽

2010 ◽

Vol 96 (15) ◽

pp. 152907 ◽

Author(s):

Xiaolei Wang ◽

Kai Han ◽

Wenwu Wang ◽

Shijie Chen ◽

Xueli Ma ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

Gate Structure ◽

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Physical origin investigation of the flatband voltage roll off for metal–oxide–semiconductor device with high-k/metal gate structure

Journal of Semiconductors ◽

10.1088/1674-4926/36/9/094006 ◽

2015 ◽

Vol 36 (9) ◽

pp. 094006

Author(s):

Kai Han ◽

Xiaolei Wang ◽

Wenwu Wang

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

Gate Structure ◽

High K ◽

Flatband Voltage

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Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.061503 ◽

2011 ◽

Vol 50 (6) ◽

pp. 061503 ◽

Author(s):

Ryosuke Iijima ◽

Lisa F. Edge ◽

John Bruley ◽

Vamsi Paruchuri ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Substrates ◽

High K ◽

Orientation Difference

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Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3521471 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01A905 ◽

Author(s):

A. Fet ◽

V. Häublein ◽

A. J. Bauer ◽

H. Ryssel ◽

L. Frey

Keyword(s):

Metal Oxide ◽

Work Function ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Effective Work ◽

Effective Work Function ◽

High K ◽

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