Reverse‐bias current reduction in low‐temperature‐annealed siliconpnjunctions by ultraclean ion‐implantation technology

1990 ◽  
Vol 67 (12) ◽  
pp. 7404-7412 ◽  
Author(s):  
T. Nitta ◽  
T. Ohmi ◽  
Y. Ishihara ◽  
A. Okita ◽  
T. Shibata ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Bias Current ◽  
Current Reduction

Reverse-Bias Current Reduction in Low-Temperature-Annealed pn Junctions Using a UHV Ion-Implanter

1989 ◽  
Author(s):  
Y. Ishihara ◽  
A. Okita ◽  
K. Yoshikawa ◽  
T. Shibata ◽  
T. Ohmi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Reverse Bias ◽  
Bias Current ◽  
Pn Junctions ◽  
Current Reduction

scholarly journals Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range

2016 ◽  
Vol 858 ◽  
pp. 741-744 ◽  
Author(s):  
Besar Asllani ◽  
Maxime Berthou ◽  
Dominique Tournier ◽  
Pierre Brosselard ◽  
Phillippe Godignon
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Wide Temperature Range ◽  
Reverse Bias ◽  
Schottky Contact ◽  
Bias Current ◽  
Strong Impact ◽  
Temperature Range ◽  
Wide Range

This paper presents a study of the Schottky barrier evolution on SBD and JBS diodes over a wide range of temperatures from 80 to 500 K. We show that inhomogeneities of the Schottky contact have a strong impact on the dependence of barrier characteristics with temperature, especially below 200 K. Analysis of the reverse bias current of such diodes at low temperature show that the barrier height depends on temperature but also on voltage.

Eliminating Metal‐Sputter Contamination in Ion Implanter for Low‐Temperature‐Annealed, Low‐Reverse‐Bias‐Current Junctions

1995 ◽  
Vol 142 (5) ◽  
pp. 1692-1698 ◽  
Author(s):  
K. Tomita ◽  
T. Migita ◽  
S. Shimonishi ◽  
T. Shibata ◽  
T. Ohmi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Reverse Bias ◽  
Bias Current

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

Amorphous Fe-B alloys produced by ion implantation. II. Low-temperature radiation damage

1985 ◽  
Vol 15 (6) ◽  
pp. 1237-1247 ◽  
Author(s):  
A Audouard ◽  
A Benyagoub ◽  
L Thome ◽  
J Chaumont
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Radiation Damage ◽  
Temperature Radiation

Mössbauer study of iron hydride formation by low temperature ion implantation

1983 ◽  
Vol 46 (8) ◽  
pp. 647-650 ◽  
Author(s):  
F. Schreyer ◽  
G. Frech ◽  
G.K. Wolf ◽  
F.E. Wagner
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Mössbauer Study ◽  
Hydride Formation ◽  
Iron Hydride

Comparison of Current and Light Induced Defects in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
R.A. Street ◽  
W.B. Jackson ◽  
M. Hack
Keyword(s):  
Numerical Modelling ◽  
Reverse Bias ◽  
Defect Density ◽  
Reverse Current ◽  
Bias Current ◽  
Spatial Profile ◽  
Forward Current ◽  
Defect Creation ◽  
Induced Defects ◽  
Metastable Defect

Metastable defect creation by illumination and by a forward current in p-i-n devices are compared using CPM and reverse current measurements of the defect density. The data show that the same defects are formed by the two mechanisms, but with different spatial profiles. Numerical modelling shows how the spatial profile influences the reverse bias current.

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