Effect of forward current stress on low frequency noise in 4H–SiC p-n junctions

GaAsBi is a suitable and very attractive material system to be used as an active layer in laser diodes (LDs). To understand the performance and the reliability of such devices and also for further laser diode improvements, the origin of noise sources should be clarified. A detailed study of near-infrared 1.09 μm wavelength GaAsBi type-I laser diodes using the low-frequency noise spectroscopy in a temperature range of (180–300) K is presented. Different types of voltage fluctuation spectral density dependencies on the forward current far below the lasing threshold have been observed. According to this, investigated samples have been classified into two groups and two equivalent noise circuits with the corresponding voltage noise sources are presented. Calculations on the voltage spectral density of the electrical noise and current-voltage characteristic approximations have been performed and the results are consistent with the experimental data. The analysis showed that one group of LDs is characterized by 1/fα-type electrical fluctuations with one steep electrical bump in the electrical noise dependence on forward current, and the origin of these fluctuations is the surface leakage channel. The LDs of the other group have two bumps in the electrical noise dependence on current where the first bump is determined by overall LD defectiveness and the second bump by Bi-related defects in the active area of LD with characteristic Lorentzian-type fluctuations having the activation energy of (0.16–0.18) eV.

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Characterization of High-Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors by Low-Frequency Noise Measurements

IEEE Electron Device Letters ◽

10.1109/led.2013.2281948 ◽

2013 ◽

Vol 34 (11) ◽

pp. 1403-1405 ◽

Cited By ~ 7

Author(s):

Andreas Tsormpatzoglou ◽

Nikolaos A. Hastas ◽

Forough Mahmoudabadi ◽

Nackbong Choi ◽

Miltiadis K. Hatalis ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Low Frequency ◽

Frequency Noise ◽

High Current ◽

Low Frequency Noise ◽

Current Stress ◽

Noise Measurements ◽

Amorphous Ingazno

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Dark current and 1/f noise in forward biased InAs photodiodes

Semiconductor Physics Quantum Electronics & Optoelectronics ◽

10.15407/spqeo24.04.466 ◽

2021 ◽

Vol 24 (04) ◽

pp. 466-471

Author(s):

V.V. Tetyorkin ◽

◽

A.V. Sukach ◽

A.I. Tkachuk ◽

◽

...

Keyword(s):

Dark Current ◽

Low Temperatures ◽

Transport Mechanism ◽

Low Frequency ◽

Depletion Region ◽

Charge Carriers ◽

Frequency Noise ◽

Low Frequency Noise ◽

Forward Current ◽

Carrier Tunneling

Dark current and low-frequency noise have been studied in forward biased InAs photodiodes within the temperature range 77…290 K. Photodiodes were fabricated by diffusion of Cd into n-InAs single crystal substrates. It has been shown that, at the temperatures >130 K, the forward current is defined by recombination of charge carriers with participation of deep states in the middle of band gap. At these temperatures, a correlation is found between forward current and 1/f noise. At lower temperatures, the forward current and noise have been analyzed within the model of inhomogeneous p-n junction caused by dislocations in the depletion region. The experimental evidence has been obtained that multiple carrier tunneling is the main transport mechanism at low temperatures, which leads to an increase in low-frequency noise.

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