scholarly journals Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes

Materials ◽  
2019 ◽  
Vol 12 (4) ◽  
pp. 673 ◽  
Author(s):  
Justinas Glemža ◽  
Vilius Palenskis ◽  
Andrejus Geižutis ◽  
Bronislovas Čechavičius ◽  
Renata Butkutė ◽  
...  
Keyword(s):  
Spectral Density ◽  
Laser Diodes ◽  
Low Frequency ◽  
Electrical Noise ◽  
Frequency Noise ◽  
Type I ◽  
Material System ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Forward Current

GaAsBi is a suitable and very attractive material system to be used as an active layer in laser diodes (LDs). To understand the performance and the reliability of such devices and also for further laser diode improvements, the origin of noise sources should be clarified. A detailed study of near-infrared 1.09 μm wavelength GaAsBi type-I laser diodes using the low-frequency noise spectroscopy in a temperature range of (180–300) K is presented. Different types of voltage fluctuation spectral density dependencies on the forward current far below the lasing threshold have been observed. According to this, investigated samples have been classified into two groups and two equivalent noise circuits with the corresponding voltage noise sources are presented. Calculations on the voltage spectral density of the electrical noise and current-voltage characteristic approximations have been performed and the results are consistent with the experimental data. The analysis showed that one group of LDs is characterized by 1/fα-type electrical fluctuations with one steep electrical bump in the electrical noise dependence on forward current, and the origin of these fluctuations is the surface leakage channel. The LDs of the other group have two bumps in the electrical noise dependence on current where the first bump is determined by overall LD defectiveness and the second bump by Bi-related defects in the active area of LD with characteristic Lorentzian-type fluctuations having the activation energy of (0.16–0.18) eV.

Low Frequency Noise Analysis in Advanced CMOS Devices

2011 ◽  
Vol 324 ◽  
pp. 441-444 ◽  
Author(s):  
Jalal Jomaah ◽  
Majida Fadlallah ◽  
Gerard Ghibaudo
Keyword(s):  
Experimental Data ◽  
Noise Analysis ◽  
Low Frequency ◽  
Deep Submicron ◽  
Electrical Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
The Impact ◽  
Mobility Fluctuations

A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are illustrated through experimental data obtained on advanced CMOS generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown.

scholarly journals LOW FREQUENCY NOISE CONVERSION IN FETS UNDER NONLINEAR OPERATION

2001 ◽  
Vol 01 (03) ◽  
pp. L189-L195 ◽  
Author(s):  
F. DANNEVILLE ◽  
B. TAMEN ◽  
A. CAPPY ◽  
J-B JURAVER ◽  
O. LLOPIS ◽  
...  
Keyword(s):  
Spectral Density ◽  
Low Frequency ◽  
Noise Voltage ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Input Gate ◽  
Rf Signal ◽  
Nonlinear Operation ◽  
Base Band

The conversion mechanisms of microscopic low frequency noise sources (e.g. generation-recombination noise sources) located in the channel of a FET (Field Effect Transistor), in the presence of a large RF signal, are investigated. It is shown that the base-band (low frequency) input gate noise voltage spectral density is strongly dependent on the magnitude of the input RF power applied to the FET. Moreover, the microscopic generation-recombination noise sources distributed along the channel are also responsible of up-converted input gate noise voltage spectral density around the RF frequency.

Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise

2013 ◽  
Vol 740-742 ◽  
pp. 934-937
Author(s):  
Hua Khee Chan ◽  
Rupert C. Stevens ◽  
Jonathan P. Goss ◽  
Nicholas G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Spectral Density ◽  
Power Spectral Density ◽  
Low Frequency ◽  
Frequency Noise ◽  
Noise Power ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Noise Power Spectral Density ◽  
Power Spectral ◽  
Noise Measurements

Two sets of 4H-SiC signal-lateral JFETs were thermally aged at 400°C and 500°C in furnaces open to air for 1000 hours. I"-" V and low frequency noise measurements were performed on these devices and the results were compared against the as-fabricated sample. The data from I"-" V characterisation demonstrates that the linear and saturated drain-source current decreases monotonically with stress temperature. In addition, the linear characteristics of the JFETs have shifted approximately 1.5V along the drain-source voltage axis. Whilst the devices thermally aged at 400°C show no degradation in magnitude and behaviour in Noise Power Spectral Density (NPSD), the NPSD of 500°C stressed devices has increase approximately 30dB and it shows a full frequency spectrum of 1/ƒ dependency up to 100 kHz. A further investigation of the noise origin reveals that the Normalised Noise Power Spectral Density (NNPSD) of the aged sample is directly proportional to RDSwhich is similar to the as-fabricated sample. Thus we hypothesize that the existing noise sources have intensified possibly due to the evolution of defects.

Low frequency noise sources in AlGaN/GaN HEMTs

1999 ◽  
Author(s):  
J. A. Garrido ◽  
F. Calle ◽  
E. Muñoz ◽  
I. Izpura ◽  
J. L. Sánchez-Rojas ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Gan Hemts

Correlation between forward-reverse low-frequency noise and atypical I–V signatures in 980 nm high-power laser diodes

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1741-1745 ◽  
Author(s):  
P. Del Vecchio ◽  
A. Curutchet ◽  
Y. Deshayes ◽  
M. Bettiati ◽  
F. Laruelle ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
High Power Laser ◽  
Power Laser

Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiOx/Ge Structures

2013 ◽  
Vol 854 ◽  
pp. 21-27 ◽  
Author(s):  
N.P. Garbar ◽  
Valeriya N. Kudina ◽  
V.S. Lysenko ◽  
S.V. Kondratenko ◽  
Yu.N. Kozyrev
Keyword(s):  
High Surface ◽  
Low Frequency ◽  
Noise Model ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Physical Processes ◽  
Noise Sources ◽  
Noise Component ◽  
First Time ◽  
Noise Models

Low-frequency noise of the structures with Ge-nanoclusters of rather high surface density grown on the oxidized silicon surface is investigated for the first time. It was revealed that the 1/f γ noise, where γ is close to unity, is the typical noise component. Nevertheless, the 1/f γ noise sources were found to be distributed nonuniformly upon the oxidized silicon structure with Ge-nanoclusters. The noise features revealed were analyzed in the framework of widely used noise models. However, the models used appeared to be unsuitable to explain the noise behavior of the structures studied. The physical processes that should be allowed for to develop the appropriate noise model are discussed.

Sign in / Sign up

Export Citation Format

Share Document