Dark current and 1/f noise in forward biased InAs photodiodes

Dark current and low-frequency noise have been studied in forward biased InAs photodiodes within the temperature range 77…290 K. Photodiodes were fabricated by diffusion of Cd into n-InAs single crystal substrates. It has been shown that, at the temperatures >130 K, the forward current is defined by recombination of charge carriers with participation of deep states in the middle of band gap. At these temperatures, a correlation is found between forward current and 1/f noise. At lower temperatures, the forward current and noise have been analyzed within the model of inhomogeneous p-n junction caused by dislocations in the depletion region. The experimental evidence has been obtained that multiple carrier tunneling is the main transport mechanism at low temperatures, which leads to an increase in low-frequency noise.

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Measurements of Low Frequency Noise of Infrared Photo-Detectors with Transimpedance Detection System

Metrology and Measurement Systems ◽

10.2478/mms-2014-0039 ◽

2014 ◽

Vol 21 (3) ◽

pp. 461-472 ◽

Cited By ~ 12

Author(s):

Łukasz Ciura ◽

Andrzej Kolek ◽

Waldemar Gawron ◽

Andrzej Kowalewski ◽

Dariusz Stanaszek

Keyword(s):

Dark Current ◽

Detection System ◽

Power Spectra ◽

Low Frequency ◽

Frequency Noise ◽

Noise Power ◽

Low Frequency Noise ◽

Leakage Resistance ◽

Noise Measurements ◽

Hgcdte Detector

Abstract The paper presents the method and results of low-frequency noise measurements of modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based detector with nBn barrier architecture is compared with a high operating temperature (HOT) heterojunction HgCdTe detector. All experiments were made in the range 1 Hz - 10 kHz at various temperatures by using a transimpedance detection system, which is examined in detail. The power spectral density of the nBn’s dark current noise includes Lorentzians with different time constants while the HgCdTe photodiode has more uniform 1/f - shaped spectra. For small bias, the low-frequency noise power spectra of both devices were found to scale linearly with bias voltage squared and were connected with the fluctuations of the leakage resistance. Leakage resistance noise defines the lower noise limit of a photodetector. Other dark current components give raise to the increase of low-frequency noise above this limit. For the same voltage biasing devices, the absolute noise power densities at 1 Hz in nBn are 1 to 2 orders of magnitude lower than in a MCT HgCdTe detector. In spite of this, low-frequency performance of the HgCdTe detector at ~ 230K is still better than that of InAs/GaSb superlattice nBn detector.

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DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors at room temperature and low temperatures

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/22.81681 ◽

1991 ◽

Vol 39 (6) ◽

pp. 1054-1058 ◽

Cited By ~ 6

Author(s):

V.K. Raman ◽

C.R. Viswanathan ◽

M.E. Kim

Keyword(s):

Heterojunction Bipolar Transistors ◽

Low Temperatures ◽

Room Temperature ◽

Low Frequency ◽

Bipolar Transistors ◽

Frequency Noise ◽

Low Frequency Noise ◽

Noise Characteristics

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Investigation of Low Frequency Noise-current Correlation for the InAs/GaSb T2SL Long-wavelength Infrared Detector

10.21203/rs.3.rs-487224/v1 ◽

2021 ◽

Author(s):

Liang Wang ◽

Liqi Zhu ◽

Zhicheng Xu ◽

Fangfang Wang ◽

Jianxin Chen ◽

...

Keyword(s):

Dark Current ◽

Reverse Bias ◽

Infrared Detector ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Long Wavelength ◽

Noise Current ◽

Current Correlation ◽

Long Wavelength Infrared

Abstract In this paper, a mesa-type 256×8 long-wavelength infrared detector is prepared by using InAs/GaSb type-II superlattice material with double barrieres structure. the area of each pixel is 25×25 μm2. The cut-off wavelength and dark current density of the detector at -0.05 V bias with liquid nitrogen temperature is 11.5 μm and 4.1×10-4 A/cm2, respectively. The power spectrum of low-frequency noise (1/f noise) at different temperatures have also been fitted by the Hooge model, and the correlations with dark current are extracted subsequently. The results shown that the 1/f noise of the detector is mainly caused by the generation-recombination current at a low reverse bias, however, when the reverse bias is high, the 1/f noise should be expressed by the sum of Igr noise and Ibtb noise which is ignored in the previous research. The 1/f noise-current correlation assessed in this work can provide insights into the low frequency noise characteristics of long-wavelength T2SL InAs/GaSb detectors, and allow for a better understanding of the main source of low-frequency noise.

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Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes

Materials ◽

10.3390/ma12040673 ◽

2019 ◽

Vol 12 (4) ◽

pp. 673 ◽

Cited By ~ 2

Author(s):

Justinas Glemža ◽

Vilius Palenskis ◽

Andrejus Geižutis ◽

Bronislovas Čechavičius ◽

Renata Butkutė ◽

...

Keyword(s):

Spectral Density ◽

Laser Diodes ◽

Low Frequency ◽

Electrical Noise ◽

Frequency Noise ◽

Type I ◽

Material System ◽

Low Frequency Noise ◽

Noise Sources ◽

Forward Current

GaAsBi is a suitable and very attractive material system to be used as an active layer in laser diodes (LDs). To understand the performance and the reliability of such devices and also for further laser diode improvements, the origin of noise sources should be clarified. A detailed study of near-infrared 1.09 μm wavelength GaAsBi type-I laser diodes using the low-frequency noise spectroscopy in a temperature range of (180–300) K is presented. Different types of voltage fluctuation spectral density dependencies on the forward current far below the lasing threshold have been observed. According to this, investigated samples have been classified into two groups and two equivalent noise circuits with the corresponding voltage noise sources are presented. Calculations on the voltage spectral density of the electrical noise and current-voltage characteristic approximations have been performed and the results are consistent with the experimental data. The analysis showed that one group of LDs is characterized by 1/fα-type electrical fluctuations with one steep electrical bump in the electrical noise dependence on forward current, and the origin of these fluctuations is the surface leakage channel. The LDs of the other group have two bumps in the electrical noise dependence on current where the first bump is determined by overall LD defectiveness and the second bump by Bi-related defects in the active area of LD with characteristic Lorentzian-type fluctuations having the activation energy of (0.16–0.18) eV.

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