Formation mechanisms of metallic Zn nanodots by using ZnO thin films deposited on n-Si substrates

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

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Characteristics of ZnO thin films deposited onto Al/Si substrates by r.f. magnetron sputtering

Thin Solid Films ◽

10.1016/s0040-6090(96)09568-5 ◽

1997 ◽

Vol 302 (1-2) ◽

pp. 116-121 ◽

Cited By ~ 71

Author(s):

Ki Hyun Yoon ◽

Ji-Won Choi ◽

Dong-Heon Lee

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Zno Thin Films ◽

Si Substrates

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Characterization of low resistivity Ga-doped ZnO thin films on Si substrates prepared by pulsed laser deposition

Materials Research Express ◽

10.1088/2053-1591/ab3a6c ◽

2019 ◽

Vol 6 (10) ◽

pp. 106421

Author(s):

Guankong Mo ◽

Jiahui Liu ◽

Guotao Lin ◽

Zhuoliang Zou ◽

Zeqi Wei ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Low Resistivity ◽

Si Substrates ◽

Doped Zno

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Electrical Properties of ZnO Thin Films Deposited by Pulsed Laser Deposition.

MRS Proceedings ◽

10.1557/proc-829-b2.25 ◽

2004 ◽

Vol 829 ◽

Author(s):

S. P. Heluani ◽

G. Simonelli ◽

M. Villafuerte ◽

G. Juarez ◽

A. Tirpak ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Axis Orientation ◽

Si Substrates ◽

N2 Atmosphere ◽

Doping Effects ◽

High O2

ABSTRACTStructural and electronic transport properties of polycrystalline ZnO thin films, prepared by pulsed laser deposition, have been investigated. The films were deposited on glass and Si3N4/Si substrates using O2 and N2 atmospheres. X-ray analysis revealed preferential c-axis orientation perpendicular to the sample substrate. Films deposited under relatively high O2 pressure were highly resistive. However, the conductivity σ increased while the films were irradiated with ultraviolet light, showing an Arrhenius (In σ ∝ T-1) dependence as a function of temperature. The ZnO film deposited in N2 atmosphere exhibited at room temperature a resistivity ∼ 1 Ω cm, and a sheet carrier concentration ∼ 5 1012 cm-2. The variation of the conductivity with temperature, in the range 60 – 150 K, follows a In σ ∝ T-1/4 dependence characteristic of variable range hopping. An analysis of the experimental results of conductivity as a function of temperature, in terms of possible doping effects, as well as conduction mechanisms is presented.

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Admittance and Photoadmittance Spectroscopy of Zinc Oxide Layers Grown on p-Si Substrates by Spin Coating Method

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.200.27 ◽

2013 ◽

Vol 200 ◽

pp. 27-32

Author(s):

Pawel Popielarski ◽

Waclaw Bala ◽

Kazimierz Paprocki

Keyword(s):

Thin Films ◽

Temperature Dependence ◽

Dielectric Response ◽

Ac Conductivity ◽

Signal Amplitude ◽

Zno Thin Films ◽

Si Substrates ◽

Universal Power Law ◽

Coating Method ◽

Different Temperatures

In this work, the dielectric response of ZnO thin films has been studied over a temperature range of 200 K - 550 K. The dielectric response of polycrystalline ZnO thin films in the frequency domain was measured from 42 Hz - to 5 MHz with a small AC signal amplitude at different temperatures. Influence of the light on conductivity has been also investigated. A universal power law relation was brought into picture to explain the frequency dependence of AC conductivity. The temperature dependence of AC conductivity was analyzed in detail. The activation energy obtained from the temperature dependence of AC conductivity was attributed to the shallow trap-controlled space charge conduction in the bulk of the sample.

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Sensitivity of ZnO Based NH3 Sensor by RF Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.626.168 ◽

2012 ◽

Vol 626 ◽

pp. 168-172

Author(s):

Samsiah Ahmad ◽

Nor Diyana Md Sin ◽

M.N. Berhan ◽

Mohamad Rusop

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Structural Properties ◽

Rf Magnetron Sputtering ◽

Xrd Analysis ◽

Zno Thin Films ◽

Rf Power ◽

Si Substrates

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50~300 Watt) on the structural properties and sensitivity of NH3sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

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Comparison of ZnO thin films grown by pulsed laser deposition on sapphire and Si substrates

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2007.09.135 ◽

2008 ◽

Vol 40 (3) ◽

pp. 699-704 ◽

Cited By ~ 17

Author(s):

L. Han ◽

F. Mei ◽

C. Liu ◽

C. Pedro ◽

E. Alves

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Si Substrates

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X-ray Photoelectron Spectroscopy (XPS) Analysis of Undoped ZnO and ZnO:Er Thin Films

Jurnal ILMU DASAR ◽

10.19184/jid.v16i1.1052 ◽

2015 ◽

Vol 16 (1) ◽

pp. 13

Author(s):

Iwan Sugihartono ◽

Esmar Budi ◽

Agus Setyo Budi

Keyword(s):

Thin Films ◽

Binding Energy ◽

Photoelectron Spectroscopy ◽

Zno Thin Films ◽

Xps Analysis ◽

X Ray ◽

Si Substrates ◽

Ultrasonic Spray ◽

P Type

Undoped ZnO and ZnO:Er thin films were deposited on p-type Si substrates by ultrasonic spray pyrolisis (USP). Undoped and ZnO:Er thin films have been analyzed by using X-ray Photoelectron Spectroscopy (XPS). The results show that the XPS spectrum has two Er peak at ∼157 eV and ∼168 eV. The XPS Zn 2p spectrum of undoped ZnO and ZnO:Er thin films have binding energy for Zn 2p3/2 (~ 1021 eV) and Zn 2p1/2 (~1045eV) were found no shift in binding energy after the incorporation of Er. Meanwhile, after Er incorporates into ZnO, the O 1s spectrum is composed two peak of binding energy (BE) at ~530.5eV and the shoulder about 532.5 eV.Keywords: ZnO thin films, ZnO:Er, XPS, binding energy

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Growth and Characterizations of Electrochemically Deposited ZnO Thin Films

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.135 ◽

2007 ◽

Vol 124-126 ◽

pp. 135-138 ◽

Cited By ~ 2

Author(s):

Yumeji Takashige ◽

Takuya Nebiki ◽

Tadashi Narusawa

Keyword(s):

Thin Films ◽

Bath Temperature ◽

Zno Thin Films ◽

Si Substrate ◽

Cell Temperature ◽

Cathodic Potential ◽

Si Substrates ◽

Similar Tendency ◽

Electrochemical Deposition Method ◽

Electrochemically Deposited

In this study,Wepresent ZnO thin films using electrochemical deposition method. ZnO thin films are deposited onto metal(Cu) and semiconductor (n-type Si) substrates. The electrolyte consists of a 0.1M Zn(NO3)2 solution, and we applied various potentials at different bath temperatures. XRD shows preferential orientation to (002) that increases with the applied cathodic potential and the bath temperature. Similar tendency is shown on both Cu and n-type Si substrates. SEM micrographs show ZnO surface morphology is greatly affected by the applied cathodic potentials. The RBS analysis reflects the rough morphology of ZnO thin film. The composition ratio Zn:O on n-type Si substrate is determined to be 1.0:1.3 ± 0.3 at the cathodic potential of -1.0[V] and the cell temperature of 70.

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