Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

2011 ◽  
Vol 109 (7) ◽  
pp. 074512 ◽  
Author(s):  
Yuanjie Lv ◽  
Zhaojun Lin ◽  
Timothy D. Corrigan ◽  
Jianzhi Zhao ◽  
Zhifang Cao ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Barrier Heights ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Gan Heterostructure

Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Room Temperature ◽  
The Other ◽  
Low Power Consumption ◽  
Initial Value ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

scholarly journals Forward current-voltage characteristics simulation of 4H-SiC silicon carbide Schottky diode for power electronics

2017 ◽  
Vol 5 (1) ◽  
pp. 11
Author(s):  
S.B. Rybalka ◽  
E.Yu. Krayushkina ◽  
A.A. Demidov ◽  
O.A. Shishkina ◽  
B.P. Surin
Keyword(s):  
Schottky Diode ◽  
Schottky Contact ◽  
Thermionic Emission ◽  
Analytical Models ◽  
Drift Diffusion ◽  
Continuity Equations ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
The Ideal

Forward current-voltage characteristics of 4H-SiC Schottky diode with Ni Schottky contact have been simulated based on in the physical analytical models based on Poisson’s equation, drift-diffusion and continuity equations. On the base of analysis of current-voltage characteristics in terms of classical thermionic emission theory it is established that the proposed simulation model of Schottky diode corresponds to the “ideal” diode with average ideality factor n»1.1 at low temperature ~300 K. It is determined that effective Schottky barrier height equals 1.1 eV for Ni/4H-SiC Schottky diode.

Current–Voltage Characteristics of n-Al0.08In0.08Ga0.84N Schottky Diode Using Pt Metal Contact

2012 ◽  
Vol 501 ◽  
pp. 226-230 ◽  
Author(s):  
Alaa J. Ghazai ◽  
Abu Hassan Haslan ◽  
Zainuriah Hassan
Keyword(s):  
Schottky Diode ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Metal Contact ◽  
Barrier Heights ◽  
Xrd Diffraction ◽  
Current Voltage ◽  
Structural And Electrical Properties ◽  
Current Voltage Characteristics ◽  
High Work

In this study, current-voltage (I-V) measurements at room temperature (RT) of platinum (Pt) metal contact combine with n-Al0.08In0.08Ga0.84N thin film which grown epitaxially by molecular beam epitaxy (MBE) technique on sapphire substrate to form Schottky diode have been characterized. Schottky barrier heights of diode related with the high work function metal of Pt electrode was measured and investigated. Pt metal was fabricated using RF-sputtering technique. The effect of annealing temperature ranged from 300 °C to 600 °C on the structural and electrical properties has been studied. The results revealed that in spite of the various annealing temperature used there is no change in XRD diffraction peak observed in Pt contact. Furthermore, at 400 °C the best surface morphology was obtained and the value of SBH and ideality factor (n) was 0.76 eV and, 1.03 respectively. This concludes that at this annealing temperature Pt metal exhibited optimum (I-V) rectifying characteristics of Pt/Al0.08In0.08Ga0.84N Schottky diode.

The electrical characterization of Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode by current–voltage characteristics

2013 ◽  
Vol 415 ◽  
pp. 77-81 ◽  
Author(s):  
Muhammad Tahir ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Dil Nawaz Khan ◽  
Fakhra Aziz
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Current Voltage ◽  
Current Voltage Characteristics

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 749-752 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Viktor V. Zelenin ◽  
Alexei N. Kuznetsov ◽  
Joseph Tringe ◽  
Albert V. Davydov ◽  
...  
Keyword(s):  
Series Resistance ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Defect Structures ◽  
Induced Current ◽  
Forward Current ◽  
Current Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

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