Investigation of the high‐field conductivity and dielectric strength of nitrogen containing polycrystalline diamond films

ABSTRACTNominally undoped, heteroepitaxially nucleated diamond films have been grown on Si(001). For different temperatures ranging between room temperature and 490°C the DCconductivity through the films has been measured for field strengths up to 600kV/cm. In the framework of the Poole-Frenkel theory a fit of the curves is possible for the model of isolated as well as for the model of overlapping coulombic potentials yielding an activation energy of 1.03eV.In addition the breakdown voltage of the films has been measured as a function of the temperature. A drastic linear decrease with temperature is observed. Starting at a dielectric strength of about 1 MV/cm at room temperature the breakdown field decreases by an order of magnitude for 400°C. This observed behaviour is consistent with thermal breakdown based on Poole-Frenkel conduction in the pre-breakdown region.

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High-field conductivity of polycrystalline diamond films

Diamond and Related Materials ◽

10.1016/0925-9635(94)90308-5 ◽

1994 ◽

Vol 3 (4-6) ◽

pp. 957-960 ◽

Cited By ~ 12

Author(s):

E. Boettger ◽

X. Jiang ◽

C.-P. Klages

Keyword(s):

High Field ◽

Diamond Films ◽

Polycrystalline Diamond

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Characterization of homoepitaxial diamond films by Electron microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088713 ◽

1991 ◽

Vol 49 ◽

pp. 880-881

Author(s):

D.P. Malta ◽

S.A. Willard ◽

R.A. Rudder ◽

G.C. Hudson ◽

J.B. Posthill ◽

...

Keyword(s):

Electron Microscopy ◽

Surface Defects ◽

Substrate Surface ◽

Diamond Films ◽

Chemical Vapor ◽

Polycrystalline Diamond ◽

Large Degree ◽

Rf Plasma ◽

Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

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Polycrystalline Diamond Films and Single Crystal Diamonds Grown by Combustion Synthesis

CIRP Annals ◽

10.1016/s0007-8506(07)61125-1 ◽

1990 ◽

Vol 39 (1) ◽

pp. 585-588 ◽

Cited By ~ 2

Author(s):

R. Komanduri ◽

L.L. Fehrenbacher ◽

L.M. Hanssen ◽

A. Morrish ◽

K.A. Snail ◽

...

Keyword(s):

Single Crystal ◽

Combustion Synthesis ◽

Diamond Films ◽

Polycrystalline Diamond

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Low energy ion-induced damage of polycrystalline diamond films

Diamond and Related Materials ◽

10.1016/0925-9635(94)90245-3 ◽

1994 ◽

Vol 3 (4-6) ◽

pp. 663-671 ◽

Cited By ~ 10

Author(s):

J. Ullmann ◽

A. Weber ◽

B. Mainz ◽

J. Stiegler ◽

T. Schuhrke

Keyword(s):

Diamond Films ◽

Polycrystalline Diamond ◽

Low Energy

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Investigation on the Machining of Thick Diamond Films by EDM Together with Mechanical Polishing

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.24-25.377 ◽

2007 ◽

Vol 24-25 ◽

pp. 377-382

Author(s):

Rong Fa Chen ◽

Dun Wen Zuo ◽

Yu Li Sun ◽

Wen Zhuang Lu ◽

D.S. Li ◽

...

Keyword(s):

Diamond Films ◽

Polycrystalline Diamond ◽

Mechanical Polishing ◽

Polishing Process ◽

Two Stage ◽

Efficient Manner ◽

Raman Scattering Spectroscopy ◽

Electro Discharge Machining ◽

Diamond Polishing ◽

Cost Efficient

Although research on various diamond polishing techniques has been carried for years, some issues still need to be examined in order to facilitate application on large areas in a cost-efficient manner. A compositive technique for machining efficiently thick diamond films prepared by DC plasma arc jet is reported in the present paper. A two-stage polishing was applied on thick polycrystalline diamond films, by employing first electro-discharge machining (EDM) for rough polishing and subsequently mechanical polishing for finishing operations. Experimental results obtained clearly indicate the applicability of the proposed two-stage technique for fabricating transparent diamond films that can be used for the production of X-ray windows. Appropriate etching with EDM is an effective pretreatment method for enhancing the efficiency of rough polishing process in mechanical polishing of thick diamond film. The machined surfaces of diamond films are studied by Scanning Electron Microscope (SEM) and Raman Scattering Spectroscopy (Raman).

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YBa2Cu3O7 Thin Films on Polycrystalline Diamond Films with Buffer Layers

MRS Proceedings ◽

10.1557/proc-275-137 ◽

1992 ◽

Vol 275 ◽

Cited By ~ 1

Author(s):

G. Cui ◽

C. P. Beetz ◽

B. A. Lincoln ◽

P. S. Kirlin

Keyword(s):

Thin Films ◽

Diamond Films ◽

Rf Sputtering ◽

Polycrystalline Diamond ◽

Fast Response ◽

Buffer Layers ◽

Multichip Modules ◽

Ir Detectors ◽

Ybco Films ◽

First Time

ABSTRACTThe deposition of in-situ YBa2CU3O7-δ Superconducting films on polycrystalline diamond thin films has been demonstrated for the first time. Three different composite buffer layer systems have been explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si3N4/YSZ/YBCO, and (3) Diamond/SiO2/YSZ/YBCO. The Zr was deposited by dc sputtering on the diamond films at 450 to 820 °C. The YSZ was deposited by reactive on-axis rf sputtering at 680 to 750 °C. The Si3N4 and SiO2 were also deposited by on-axis rf sputtering at 400 to 700 °C. YBCO films were grown on the buffer layers by off-axis rf sputtering at substrate temperatures between 690 °C and 750 °C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric IR detectors and paves the way for the use of HTSC on diamond for interconnect layers in multichip modules.

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