High Field Electrical Conductivity and Breakdown in Heteroepitaxial Diamond Films

1995 ◽  
Vol 416 ◽  
Author(s):  
S. Schröppel ◽  
R. Hessmer ◽  
M. Schreck ◽  
B. Stritzker
Keyword(s):  
High Field ◽  
Room Temperature ◽  
Diamond Films ◽  
Dielectric Strength ◽  
Breakdown Field ◽  
Thermal Breakdown ◽  
Breakdown Region ◽  
Different Temperatures ◽  
Order Of Magnitude ◽  
Observed Behaviour

ABSTRACTNominally undoped, heteroepitaxially nucleated diamond films have been grown on Si(001). For different temperatures ranging between room temperature and 490°C the DCconductivity through the films has been measured for field strengths up to 600kV/cm. In the framework of the Poole-Frenkel theory a fit of the curves is possible for the model of isolated as well as for the model of overlapping coulombic potentials yielding an activation energy of 1.03eV.In addition the breakdown voltage of the films has been measured as a function of the temperature. A drastic linear decrease with temperature is observed. Starting at a dielectric strength of about 1 MV/cm at room temperature the breakdown field decreases by an order of magnitude for 400°C. This observed behaviour is consistent with thermal breakdown based on Poole-Frenkel conduction in the pre-breakdown region.

Electrical Contacts to Polycrystalline B Doped Diamond Films

1989 ◽  
Vol 162 ◽  
Author(s):  
K. Nishimura ◽  
K. Das ◽  
M. Iwase ◽  
J. T. Glass ◽  
K. Kobashi
Keyword(s):  
Carrier Concentration ◽  
Room Temperature ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Electrical Contacts ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd ◽  
Order Of Magnitude

ABSTRACTB doped diamond films were synthesized by microwave plasma CVD and electrical contacts were fabricated by R F sputtering. Rc was obtained for Pt, Ni, TaSi2, and Al asdeposited contacts at room temperature. Pt gave the minimum Rc and Al gave the maximum Rc of the metals investigated on films containing a carrier concentration of 5 × 1018/cm3. The minimum Rc, 8.6 × 10−4 Ω cm 2, was obtained on heavily B doped diamond films with a carrier concentration of 2.7 × 1020/cm3. After nnealing at 400 °C, the Rc of Pt contacts on B doped diamond films with a resistivity of 2×104 Ω1 cm decreased by approximately one order of magnitude.

Investigation of the high‐field conductivity and dielectric strength of nitrogen containing polycrystalline diamond films

1995 ◽  
Vol 77 (12) ◽  
pp. 6332-6337 ◽  
Author(s):  
E. Boettger ◽  
A. Bluhm ◽  
X. Jiang ◽  
L. Schäfer ◽  
C.‐P. Klages
Keyword(s):  
High Field ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Dielectric Strength

Streptokinase Stability Pattern during Storage in Various Solvents and at Different Temperatures

1975 ◽  
Vol 33 (03) ◽  
pp. 586-596 ◽  
Author(s):  
M Martin ◽  
Fräulein H Auel ◽  
Keyword(s):  
Room Temperature ◽  
Group Iii ◽  
Charged Colloids ◽  
Group I ◽  
Different Temperatures ◽  
Order Of Magnitude ◽  
Stability Pattern ◽  
The Stability ◽  
Incubation Temperatures ◽  
Dextran Solution

SummaryThe activity drop of 5 u streptokinase was measured in 1 ml each of various solutions (0.9% NaCl solution, 5% glucose solution, 5% levulose solution, 10% dextran solution, gelatin solution, 3% albumin solution, Michaelis buffer, glucose (5%)-heparin (750 u/ml) solution) at different incubation temperatures (–20° c, 4° c, 20 c, 37 C), and over different observation periods (15 min, 30 min, 45 min, 60 min, 6 h, 12 h, 24 h, and 48 h). Solution media tested for streptokinase-protecting quality were broken down into three groups.Group I: Solvents displaying excellent stabilizing properties (gelatin and albumin solutions).Group II: Solvents displaying medium stabilizing properties (dextran and levulose solutions).Group III: Solvents displaying poor stabilizing properties (NaCl and glucose solutions, Michaelis buffer).In testing streptokinase concentrations as used for therapeutic purposes (1500 u/ml, 50,000 u/ml), no decay was found to take place over observation periods of up to 48 h, and no influence by different solvents (Group I, II or III) was traceable. Heparin stored with streptokinase at room temperature over a period of 48 h did not alter the streptokinase stability.Some mechanisms concerning the stability pattern of streptokinase are discussed. It appears that low streptokinase concentrations need negatively charged colloids to keep the protein structure intact. The streptokinase-protecting macro-molecules tested so far were albumin, gelatin, and streptokinase. Obviously, streptokinase by itself was able to preserve its own stability provided its concentration was of a certain order of magnitude (1500 u/ml, 50,000 u/ml).

Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices

2005 ◽  
Vol 483-485 ◽  
pp. 717-720
Author(s):  
Samir Zelmat ◽  
Marie Laure Locatelli ◽  
Thierry Lebey
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Dielectric Strength ◽  
Junction Temperature ◽  
Breakdown Field ◽  
Power Devices ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Different Temperatures

Silicon carbide (SiC) is a wide bandgap semiconductor suitable for high-voltage, highpower and high-temperature applications [1]. However, and among other issues, the production of advanced SiC power devices still remains limited due to some shortcomings of the dielectric properties of the passivation layer [2]. Due to their supposed high operating temperature and dielectric strength [3], spin coated polyimide materials appear as a possible candidates for SiC device passivation and insulation purposes. As a matter of fact, they are already used in current commercial SiC devices allowing a maximum junction temperature of 175 °C. The aim of this paper is to study the ability of polyimide (PI) coatings to be used for a Tjmax up to 300 °C. Therefore, the main electrical properties (dielectric permittivity, leakage current and breakdown field) at different temperatures of a high temperature commercially available polyimide material (from HD Microsystems) in both Metal-Insulator-Semiconductor (MIS) and Metal-Insulator-Metal (MIM) structures are presented and discussed.

scholarly journals Investigation of Electrical Properties of BiFeO3/LDPE Nanocomposite Dielectrics with Magnetization Treatments

Polymers ◽  
2021 ◽  
Vol 13 (16) ◽  
pp. 2622
Author(s):  
Wei Song ◽  
Yu Sun ◽  
Tian-Jiao Yu ◽  
Yu-Zhang Fan ◽  
Zhi Sun ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Room Temperature ◽  
Breakdown Strength ◽  
Bismuth Ferrite ◽  
Breakdown Field ◽  
Melt Blending ◽  
Blending Method ◽  
Different Temperatures ◽  
Breakdown Field Strength

The purpose of this paper is to study the effect of nano-bismuth ferrite (BiFeO3) on the electrical properties of low-density polyethylene (LDPE) under magnetic-field treatment at different temperatures. BiFeO3/LDPE nanocomposites with 2% mass fraction were prepared by the melt-blending method, and their electrical properties were studied. The results showed that compared with LDPE alone, nanocomposites increased the crystal concentration of LDPE and the spherulites of LDPE. Filamentous flake aggregates could be observed. The spherulite change was more obvious under high-temperature magnetization. An agglomerate phenomenon appeared in the composite, and the particle distribution was clear. Under high-temperature magnetization, BiFeO3 particles were increased and showed a certain order, but the change for room-temperature magnetization was not obvious. The addition of BiFeO3 increased the crystallinity of LDPE. Although the crystallinity decreased after magnetization, it was higher than that of LDPE. An AC test showed that the breakdown strength of the composite was higher than that of LDPE. The breakdown strength increased after magnetization. The increase of breakdown strength at high temperature was less, but the breakdown field strength of the composite was higher than that of LDPE. Compared with LDPE, the conductive current of the composite was lower. So, adding BiFeO3 could improve the dielectric properties of LDPE. The current of the composite decayed faster with time. The current decayed slowly after magnetization.

Comparative Labelling and Biokinetic Studies of 99mTc-EDTA(Sn) and 99mTc-DTPA(Sn)

1977 ◽  
Vol 16 (01) ◽  
pp. 30-35 ◽  
Author(s):  
N. Agha ◽  
R. B. R. Persson
Keyword(s):  
Complex Formation ◽  
Significant Influence ◽  
Room Temperature ◽  
Ph Value ◽  
Maximum Activity ◽  
Reduction Step ◽  
Labelling Yield ◽  
Different Temperatures ◽  
Kinetics Of

SummaryGelchromatography column scanning has been used to study the fractions of 99mTc-pertechnetate, 99mTcchelate and reduced hydrolyzed 99mTc in preparations of 99mTc-EDTA(Sn) and 99mTc-DTPA(Sn). The labelling yield of 99mTc-EDTA(Sn) chelate was as high as 90—95% when 100 μmol EDTA · H4 and 0.5 (Amol SnCl2 was incubated with 10 ml 99mTceluate for 30—60 min at room temperature. The study of the influence of the pH-value on the fraction of 99mTc-EDTA shows that pH 2.8—2.9 gave the best labelling yield. In a comparative study of the labelling kinetics of 99mTc-EDTA(Sn) and 99mTc- DTPA(Sn) at different temperatures (7, 22 and 37°C), no significant influence on the reduction step was found. The rate constant for complex formation, however, increased more rapidly with increased temperature for 99mTc-DTPA(Sn). At room temperature only a few minutes was required to achieve a high labelling yield with 99mTc-DTPA(Sn) whereas about 60 min was required for 99mTc-EDTA(Sn). Comparative biokinetic studies in rabbits showed that the maximum activity in kidneys is achieved after 12 min with 99mTc-EDTA(Sn) but already after 6 min with 99mTc-DTPA(Sn). The long-term disappearance of 99mTc-DTPA(Sn) from the kidneys is about five times faster than that for 99mTc-EDTA(Sn).

Luminescence Properties of Europium-Doped Yttrium Oxides Derived from Their Dodecylsulfate-Templated Mesostructure and Nanotube Forms

2003 ◽  
Vol 775 ◽  
Author(s):  
Tsuyoshi Kijima ◽  
Kenichi Iwanaga ◽  
Tomomi Hamasuna ◽  
Shinji Mohri ◽  
Mitsunori Yada ◽  
...  
Keyword(s):  
Room Temperature ◽  
Broad Band ◽  
Concentration Quenching ◽  
Precipitation Method ◽  
Homogeneous Precipitation ◽  
Bulk Materials ◽  
Main Band ◽  
Homogeneous Precipitation Method ◽  
Order Of Magnitude ◽  
Weak Luminescence

AbstractEuropium-doped hexagonal-mesostructured and nanotubular yttrium oxides templated by dodecylsulfate species as well as surfactant free bulk oxides were synthesized by the homogeneous precipitation method. All the as grown nanostructured or bulk materials with amorphous or poorly crystalline frameworks showed weak luminescence bands at room temperature. On calcination at 1000°C these materials were converted into highly crystalline yttrium oxides, resulting in a total increase in intensity of all the bands by one order of magnitude. In the hexagonal-mesostructured system, the main band due to the 5D0-7F2 transition for the calcined phases showed a sharp but asymmetrical multiplet splitting indicating multiple Eu sites. Concentration quenching was found at a Eu content of 3 mol% or above for these phases. In contrast, the main emission for the calcined solids in the nanotubular system occurred as poorly resolved broad band and the intensity of the main band at higher Eu content was significantly enhanced compared with those for the other two systems.

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

Temperature Dependence of the Self-Assembled Styrene Based Random Ionomers in Aqueous Solution

2003 ◽  
Vol 775 ◽  
Author(s):  
Sung-Hwa Oh ◽  
Ju-Myung Song ◽  
Joon-Seop Kim ◽  
Hyang-Rim Oh ◽  
Jeong-A Yu
Keyword(s):  
Partition Coefficients ◽  
Room Temperature ◽  
Aqueous Media ◽  
The Self ◽  
Spectroscopic Methods ◽  
Ion Content ◽  
Repeat Units ◽  
Notable Effect ◽  
Order Of Magnitude ◽  
Experimental Errors

AbstractSolution behaviors of poly(styrene-co-sodium methacrylate) were studied by fluorescence spectroscopic methods using pyrene as a probe. The mol% of methacrylate was in the range 3.6–9.4. Water and N,N-dimethylforamide(DMF) mixture was used as a solvent (DMF/water = 0.2 mol %). The critical micelle (or aggregation) concentrations of ionomers and the partition coefficients of pyrene were obtained the temperature range 10–80°C. At room temperature, the values of CMCs (or CACs) were in the range 4.7 ×10-6 5.3 ×10-6 g/mL and we could not find any notable effect of the content of ionic repeat units within the experimental errors. Unlike CMCs, as the ion content increased, partitioning of pyrene between the hydrophobic aggregates and an aqueous media decreased from 1.5 ×105 to 9.4 ×104. As the temperature increased from 10 to 80 °C, the values of CMCs increased less than one order of magnitude. While, the partition coefficients of pyrene decreased one order of magnitude and the effect of the ion content became negligible.

scholarly journals Temperature-Dependent Stimulated Emission Cross-Section in Nd3+:YLF Crystal

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 431
Author(s):  
Giorgio Turri ◽  
Scott Webster ◽  
Michael Bass ◽  
Alessandra Toncelli
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Room Temperature ◽  
Radiative Decay ◽  
Emission Cross Section ◽  
Spectroscopic Properties ◽  
Stimulated Emission ◽  
Different Temperatures ◽  
Stimulated Emission Cross Section ◽  
Semi Empirical

Spectroscopic properties of neodymium-doped yttrium lithium fluoride were measured at different temperatures from 35 K to 350 K in specimens with 1 at% Nd3+ concentration. The absorption spectrum was measured at room temperature from 400 to 900 nm. The decay dynamics of the 4F3/2 multiplet was investigated by measuring the fluorescence lifetime as a function of the sample temperature, and the radiative decay time was derived by extrapolation to 0 K. The stimulated-emission cross-sections of the transitions from the 4F3/2 to the 4I9/2, 4I11/2, and 4I13/2 levels were obtained from the fluorescence spectrum measured at different temperatures, using the Aull–Jenssen technique. The results show consistency with most results previously published at room temperature, extending them over a broader range of temperatures. A semi-empirical formula for the magnitude of the stimulated-emission cross-section as a function of temperature in the 250 K to 350 K temperature range, is presented for the most intense transitions to the 4I11/2 and 4I13/2 levels.

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