Ultra-High Sensitivity for Lead Ion Detection Beyond the Ideal Nernst Response with AlGaN/GaN High Electron Mobility Transistors (HEMTs)

2018 ◽  
Keyword(s):  
Electron Mobility ◽  
High Sensitivity ◽  
High Electron Mobility Transistors ◽  
Lead Ion ◽  
High Electron ◽  
Ion Detection ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
The Ideal

Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors

2009 ◽  
Vol 1202 ◽  
Author(s):  
Byung Hwan Chu ◽  
Hon-way Lin ◽  
Shangjr Gwo ◽  
Yu-Lin Wang ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Mobility ◽  
Chloride Ion ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
Ion Concentration ◽  
High Electron ◽  
Ion Detection ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

AbstractChloride ion concentration can be used as a biomarker for the level of pollen exposure in allergic asthma, chronic cough and airway acidification related to respiratory disease. AlGaN/GaN high electron mobility transistor (HEMT) with an InN thin film in the gate region was used for real time detection of chloride ion detection. The InN thin film provided surface sites for reversible anion coordination. The sensor exhibited significant changes in channel conductance upon exposure to various concentrations of NaCl solutions. The sensor was tested over the range of 100 nM to 100 μM NaCl solutions. The effect of cations on the chloride ion detection was also studied.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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