Characterization of near-terahertz complementary metal-oxide semiconductor circuits using a Fourier-transform interferometer

Review of Scientific Instruments ◽

10.1063/1.3647223 ◽

2011 ◽

Vol 82 (10) ◽

pp. 103106 ◽

Author(s):

D. J. Arenas ◽

Dongha Shim ◽

D. I. Koukis ◽

Eunyoung Seok ◽

D. B. Tanner ◽

...

Keyword(s):

Fourier Transform ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Circuits

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Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.51 ◽

2007 ◽

Vol 46 (1) ◽

pp. 51-55 ◽

Author(s):

Genshiro Kawachi ◽

Yoshiaki Nakazaki ◽

Hiroyuki Ogawa ◽

Masayuki Jyumonji ◽

Noritaka Akita ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

High Performance ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Circuits

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n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Modeling in Forward Body Bias Condition for Low Voltage Complementary Metal–Oxide–Semiconductor Circuits Design

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.044301 ◽

2012 ◽

Vol 51 ◽

pp. 044301 ◽

Author(s):

Hitoshi Aoki ◽

Akira Matsuzawa

Keyword(s):

Metal Oxide ◽

Field Effect Transistor ◽

Low Voltage ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Semiconductor Circuits ◽

Forward Body Bias ◽

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Characterization of Thermopile Based on Complementary Metal-Oxide-Semiconductor (CMOS) Materials and Post CMOS Micromachining

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.4340 ◽

2002 ◽

Vol 41 (Part 1, No. 6B) ◽

pp. 4340-4345 ◽

Author(s):

Chen-Hsun Du ◽

Chengkuo Lee

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Combining and matching optical, electron-beam, and x-ray lithographies in the fabrication of Si complementary metal–oxide–semiconductor circuits with 0.1 and sub-0.1 μm features

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588257 ◽

1995 ◽

Vol 13 (6) ◽

pp. 2741 ◽

Author(s):

Isabel Y. Yang

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

Optical Electron ◽

Semiconductor Circuits

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Characterization of High Quality Nitrided Gate Dielectric Films Manufactured in Reduced Pressure Furnace for Ultralarge Scale Integration Complementary Metal Oxide Semiconductor Applications

Journal of The Electrochemical Society ◽

10.1149/1.1838538 ◽

1998 ◽

Vol 145 (5) ◽

pp. 1679-1683 ◽

Author(s):

Giwan Yoon ◽

Yefim Epstein

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dielectric Films ◽

High Quality ◽

Reduced Pressure ◽

Scale Integration

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Hybrid carbon nanotube-silicon complementary metal oxide semiconductor circuits

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2800322 ◽

2007 ◽

Vol 25 (6) ◽

pp. 2577 ◽

Author(s):

I. Meric ◽

V. Caruso ◽

R. Caldwell ◽

J. Hone ◽

K. L. Shepard ◽

...

Keyword(s):

Carbon Nanotube ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Circuits ◽

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n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Modeling in Forward Body Bias Condition for Low Voltage Complementary Metal–Oxide–Semiconductor Circuits Design

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.044301 ◽

2012 ◽

Vol 51 (4R) ◽

pp. 044301

Author(s):

Hitoshi Aoki ◽

Akira Matsuzawa

Keyword(s):

Metal Oxide ◽

Field Effect Transistor ◽

Low Voltage ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Semiconductor Circuits ◽

Forward Body Bias ◽

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Sub-100 nm KrF lithography for complementary metal–oxide–semiconductor circuits

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590561 ◽

1999 ◽

Vol 17 (2) ◽

pp. 345 ◽

Author(s):

M. Fritze ◽

D. Astolfi ◽

H. Liu ◽

C. K. Chen ◽

V. Suntharalingam ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Circuits

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Fabrication and characterization of vibration-driven AlN piezoelectric micropower generator compatible with complementary metal-oxide semiconductor process

Journal of Intelligent Material Systems and Structures ◽

10.1177/1045389x14546649 ◽

2014 ◽

Vol 26 (15) ◽

pp. 1971-1979 ◽

Author(s):

Gwiy-Sang Chung ◽

Byung-Chul Lee

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization ◽

Semiconductor Process ◽

Micropower Generator

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Reference Complementary Metal–Oxide–Semiconductor Circuits and Test Structures for Evaluation of Dynamic Noise in Power Delivery Networks

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04de01 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DE01 ◽

Author(s):

Tetsuro Matsuno ◽

Daisuke Kosaka ◽

Makoto Nagata

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Power Delivery ◽

Oxide Semiconductor ◽

Power Delivery Networks ◽

Dynamic Noise ◽

Semiconductor Circuits ◽

Delivery Networks

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