Combining and matching optical, electron-beam, and x-ray lithographies in the fabrication of Si complementary metal–oxide–semiconductor circuits with 0.1 and sub-0.1 μm features

Oxide Semiconductor ◽

X Ray ◽

Optical Electron ◽

Semiconductor Circuits

Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

10.1143/jjap.46.51 ◽

2007 ◽

Vol 46 (1) ◽

pp. 51-55 ◽

Cited By ~ 16

Author(s):

Genshiro Kawachi ◽

Yoshiaki Nakazaki ◽

Hiroyuki Ogawa ◽

Masayuki Jyumonji ◽

Noritaka Akita ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

High Performance ◽

Oxide Semiconductor ◽

Semiconductor Circuits

WE-G-204-04: Focal Spot Deblurring For High Resolution Amorphous Selenium (aSe) Complementary Metal Oxide Semiconductor (CMOS) X-Ray Detector

Medical Physics ◽

10.1118/1.4926088 ◽

2015 ◽

Vol 42 (6Part40) ◽

pp. 3694-3694

Author(s):

S Setlur Nagesh ◽

R Rana ◽

M Russ ◽

C Ionita ◽

D Bednarek ◽

...

Keyword(s):

High Resolution ◽

Metal Oxide ◽

Focal Spot ◽

Amorphous Selenium ◽

Oxide Semiconductor ◽

X Ray

Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System

10.1143/jjap.39.6843 ◽

2000 ◽

Vol 39 (Part 1, No. 12B) ◽

pp. 6843-6848 ◽

Cited By ~ 3

Author(s):

Mitsuru Narihiro ◽

Hitoshi Wakabayashi ◽

Makoto Ueki ◽

Kohichi Arai ◽

Takashi Ogura ◽

...

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Lithography Process ◽

Beam System ◽

Mix And Match

n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Modeling in Forward Body Bias Condition for Low Voltage Complementary Metal–Oxide–Semiconductor Circuits Design

10.1143/jjap.51.044301 ◽

2012 ◽

Vol 51 ◽

pp. 044301 ◽

Cited By ~ 1

Author(s):

Hitoshi Aoki ◽

Akira Matsuzawa

Keyword(s):

Metal Oxide ◽

Field Effect Transistor ◽

Low Voltage ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Semiconductor Circuits ◽

Forward Body Bias ◽

Bias Condition

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Electron-beam programming and testing of complementary metal-oxide semiconductor systems

10.1116/1.583936 ◽

1987 ◽

Vol 5 (1) ◽

pp. 97 ◽

Cited By ~ 2

Author(s):

T. M. Lyszczarz

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Oxide Semiconductor

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

Hybrid carbon nanotube-silicon complementary metal oxide semiconductor circuits

10.1116/1.2800322 ◽

2007 ◽

Vol 25 (6) ◽

pp. 2577 ◽

Cited By ~ 5

Author(s):

I. Meric ◽

V. Caruso ◽

R. Caldwell ◽

J. Hone ◽

K. L. Shepard ◽

...

Keyword(s):

Carbon Nanotube ◽

Metal Oxide ◽

Oxide Semiconductor ◽

Semiconductor Circuits ◽

Hybrid Carbon

Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

Review of Scientific Instruments ◽

10.1063/1.4929713 ◽

2015 ◽

Vol 86 (8) ◽

pp. 086107 ◽

Cited By ~ 6

Author(s):

Oliver R. Hoidn ◽

Gerald T. Seidler

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

X Ray ◽

Semiconductor Sensors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Fabrication of back-gated complementary metal-oxide semiconductor devices using mixed and matched optical and x-ray lithographies

10.1116/1.588636 ◽

1996 ◽

Vol 14 (6) ◽

pp. 4024

Author(s):

Isabel Y. Yang

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

X Ray

n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Modeling in Forward Body Bias Condition for Low Voltage Complementary Metal–Oxide–Semiconductor Circuits Design

10.7567/jjap.51.044301 ◽

2012 ◽

Vol 51 (4R) ◽

pp. 044301

Author(s):

Hitoshi Aoki ◽

Akira Matsuzawa

Keyword(s):

Metal Oxide ◽

Field Effect Transistor ◽

Low Voltage ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Semiconductor Circuits ◽

Forward Body Bias ◽

Bias Condition

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Fabrication of high performance 512K static-random access memories in 0.25 μm complementary metal–oxide semiconductor technology using x-ray lithography

10.1116/1.586560 ◽

1993 ◽

Vol 11 (6) ◽

pp. 2910 ◽

Cited By ~ 15

Author(s):

R. Viswanathan

Keyword(s):

Metal Oxide ◽

High Performance ◽

Random Access ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

X Ray ◽

Static Random Access Memories