Characteristics of an indium antimonide metal-insulator-semiconductor structure prepared by remote plasma enhanced chemical vapor deposition

Jae-Gon Lee; Sie-Young Choi; Sang-Jun Park

doi:10.1063/1.365697

Characteristics of an indium antimonide metal-insulator-semiconductor structure prepared by remote plasma enhanced chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.365697 ◽

1997 ◽

Vol 82 (8) ◽

pp. 3917-3921 ◽

Cited By ~ 5

Author(s):

Jae-Gon Lee ◽

Sie-Young Choi ◽

Sang-Jun Park

Keyword(s):

Chemical Vapor Deposition ◽

Indium Antimonide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Semiconductor Structure ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III–V semiconductor-based metal–insulator–semiconductor devices

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589003 ◽

1996 ◽

Vol 14 (4) ◽

pp. 2674 ◽

Cited By ~ 39

Author(s):

D. G. Park

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Formation of Metal-Insulator-Semiconductor Structure (B/Hexagonal BN/Graphite) by Plasma Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.l334 ◽

1997 ◽

Vol 36 (Part 2, No. 3B) ◽

pp. L334-L336

Author(s):

Yukio Osaka ◽

Nahotoshi Nakagawa ◽

Kenji Kohno

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Semiconductor Structure ◽

Plasma Chemical ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Plasma Chemical Vapor Deposition

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Deposition of single phase, homogeneous silicon oxynitride by remote plasma-enhanced chemical vapor deposition, and electrical evaluation in metal–insulator–semiconductor devices

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587792 ◽

1994 ◽

Vol 12 (4) ◽

pp. 2504 ◽

Cited By ~ 36

Author(s):

Y. Ma

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Single Phase ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Silicon Oxynitride ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Metalorganic chemical vapor deposition- grown AIN on 6H-SiC for metal-insulator-semiconductor device applications

Journal of Electronic Materials ◽

10.1007/s11664-997-0153-1 ◽

1997 ◽

Vol 26 (3) ◽

pp. 212-216 ◽

Cited By ~ 10

Author(s):

C. C. Tin ◽

Y. Song ◽

T. Isaacs Smith ◽

V. Madangakli ◽

T. S. Sudarshan

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Semiconductor Device ◽

Chemical Vapor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Device Applications ◽

Metalorganic Chemical

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Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP‐based metal‐insulator‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.100426 ◽

1988 ◽

Vol 53 (14) ◽

pp. 1291-1293 ◽

Cited By ~ 14

Author(s):

C. Licoppe ◽

J. M. Moison ◽

Y. I. Nissim ◽

J. L. Regolini ◽

D. Bensahel

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Surface Reactions ◽

Chemical Vapor ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Chemical Vapor Deposition of Tantalum Pentoxide Films for Metal‐Insulator‐Semiconductor Devices

Journal of The Electrochemical Society ◽

10.1149/1.2132639 ◽

1976 ◽

Vol 123 (10) ◽

pp. 1570-1573 ◽

Cited By ~ 40

Author(s):

E. Kaplan ◽

M. Balog ◽

D. Frohman‐Bentchkowsky

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Tantalum Pentoxide ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Fabrication of (NH[sub 4])[sub 2]S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1667504 ◽

2004 ◽

Vol 22 (3) ◽

pp. 1027 ◽

Cited By ~ 10

Author(s):

A. Jaouad ◽

V. Aimez ◽

Ç. Aktik ◽

K. Bellatreche ◽

A. Souifi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Low Frequency ◽

Chemical Vapor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Frequency Plasma

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Increased thermal stability of Au/GaAs metal‐insulator‐semiconductor Schottky diodes with silicon nitride interfacial layer deposited by remote plasma‐enhanced chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.353778 ◽

1993 ◽

Vol 73 (10) ◽

pp. 5075-5080 ◽

Cited By ~ 6

Author(s):

J. Kolník ◽

J. Ivančo ◽

M. Ožvold ◽

F. Wyczisk ◽

J. Olivier

Keyword(s):

Thermal Stability ◽

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Interfacial Layer ◽

Schottky Diodes ◽

Chemical Vapor ◽

Remote Plasma ◽

Metal Insulator ◽

Thermal Stability Of

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Si3N4/Si/Ge/GaAs metal‐insulator‐semiconductor structures grown by in situ chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.356345 ◽

1994 ◽

Vol 75 (3) ◽

pp. 1826-1828 ◽

Cited By ~ 18

Author(s):

J. Reed ◽

G. B. Gao ◽

A. Bochkarev ◽

H. Morkoç

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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On the Annealing Effects of GaN Metal–Insulator–Semiconductor Capacitors with Photo-Chemical Vapor Deposition Oxide Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3045 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3045-3048 ◽

Cited By ~ 1

Author(s):

Yu-Zung Chiou

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Oxide Layers ◽

Annealing Effects

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