Electrical characteristics and operating mechanisms of nonvolatile memory devices fabricated utilizing core-shell CuInS2-ZnS quantum dots embedded in a poly(methyl methacrylate) layer

2011 ◽  
Vol 99 (19) ◽  
pp. 193302 ◽  
Author(s):  
Kyu Wan Han ◽  
Min Ho Lee ◽  
Tae Whan Kim ◽  
Dong Yeol Yun ◽  
Sung Woo Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Methyl Methacrylate ◽  
Nonvolatile Memory ◽  
Core Shell ◽  
Memory Devices ◽  
Electrical Characteristics ◽  
Poly Methyl Methacrylate ◽  
Nonvolatile Memory Devices

GaAs metal-oxide-semiconductor based nonvolatile memory devices embedded with ZnO quantum dots

2013 ◽  
Vol 114 (8) ◽  
pp. 084509 ◽  
Author(s):  
Souvik Kundu ◽  
Sankara Rao Gollu ◽  
Ramakant Sharma ◽  
Nripendra. N Halder ◽  
Pranab Biswas ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Zno Quantum Dots

One-step fabrication of CdS:Mo–CdMoO4core–shell nanoribbons for nonvolatile memory devices with high resistance switching

2017 ◽  
Vol 5 (25) ◽  
pp. 6156-6162 ◽  
Author(s):  
Ni Zheng ◽  
Zhibin Shao ◽  
Feifei Xia ◽  
Tianhao Jiang ◽  
Xiaofeng Wu ◽  
...  
Keyword(s):  
High Resistance ◽  
Nonvolatile Memory ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Core Shell ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
One Step ◽  
Effect Transistor

A one-step fabrication of CdS:Mo–CdMoO4core–shell nanoribbons (NR) was achieved for applications in high performance nano-field-effect transistor (FET)-based nonvolatile memory (NVM) device.

Sign in / Sign up

Export Citation Format

Share Document