Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

The patterned growth of crystalline rubrene films directly on electrodes is demonstrated. In addition, organic films with close packed and porous structures are locally achieved by controlling the electrode spaces, resulting in a two orders of magnitude difference in carrier mobility.

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Bisperfluorophenyl-Substituted Thiophene Oligomers. Organic Semiconductors with Complementary-Type Carrier Mobility

MRS Proceedings ◽

10.1557/proc-736-d7.11 ◽

2002 ◽

Vol 736 ◽

Author(s):

Antonio Facchetti ◽

Howard E. Katz ◽

Tobin J. Marks

Keyword(s):

Thin Films ◽

Cyclic Voltammetry ◽

Molecular Characterization ◽

Organic Semiconductors ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistor ◽

Photoluminescence Spectroscopy ◽

Design Synthesis ◽

Effect Transistor

ABSTRACTThe design, synthesis, and properties of two mixed perfluorophenyl-thiophene oligomers 5,5″′-diperfluorophenyl-2,2′:5′,2″:5″,2″′:5″′,2″″:5″″,2″″′-quaterthiophene (2) and 5,5′-bis{1-[4-(thien-2-yl)-2,3,5,6-tetrafluorophenyl)] }-2,2′-dithiophene (3) are presented. Molecular characterization included the following techniques: multinuclear NMR, DSC and TGA, optical UV-Vis and photoluminescence spectroscopy, and cyclic voltammetry. Thin films can be easily grown by vacuum evaporation and have been characterized by optical UV-Vis and photoluminescence, XRD, and field-effect transistor measurements. Electron and hole mobilities of 0.06–0.08 cm2/(V s) and 0.001–0.003 cm2/(V s) were found for 2 and 3, respectively.

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High Carrier Mobility and Environmentally stable Microporous Zeolite Imidazolate Framework (ZIF-67): A Field-Effect Transistor (FET) Approach

Chemical Physics Letters ◽

10.1016/j.cplett.2021.138690 ◽

2021 ◽

pp. 138690

Author(s):

Pasha W. Sayyad ◽

Aafiya A. Farooqui ◽

Nikesh N. Ingle ◽

Theeazen Al-Gahouari ◽

Gajanan A. Bodkhe ◽

...

Keyword(s):

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistor ◽

High Carrier Mobility ◽

High Carrier ◽

Effect Transistor ◽

Microporous Zeolite

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Electrical Properties with Varying CuPc Thickness and Channel Length of the Field-effect Transistor

Journal of the Korean Institute of Electrical and Electronic Material Engineers ◽

10.4313/jkem.2007.20.1.047 ◽

2007 ◽

Vol 20 (1) ◽

pp. 47-52

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Field Effect Transistor ◽

Channel Length ◽

Effect Transistor

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Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors

Nanomaterials ◽

10.3390/nano11113121 ◽

2021 ◽

Vol 11 (11) ◽

pp. 3121

Author(s):

Monica La Mura ◽

Patrizia Lamberti ◽

Vincenzo Tucci

Keyword(s):

High Frequency ◽

Communication Systems ◽

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Channel Length ◽

Geometrical Parameters ◽

Effect Transistor ◽

Rf Performance ◽

The Impact

The interest in graphene-based electronics is due to graphene’s great carrier mobility, atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These characteristics enable the development of extremely miniaturized high-performing electronic devices for next-generation radiofrequency (RF) communication systems. The main building block of graphene-based electronics is the graphene-field effect transistor (GFET). An important issue hindering the diffusion of GFET-based circuits on a commercial level is the repeatability of the fabrication process, which affects the uncertainty of both the device geometry and the graphene quality. Concerning the GFET geometrical parameters, it is well known that the channel length is the main factor that determines the high-frequency limitations of a field-effect transistor, and is therefore the parameter that should be better controlled during the fabrication. Nevertheless, other parameters are affected by a fabrication-related tolerance; to understand to which extent an increase of the accuracy of the GFET layout patterning process steps can improve the performance uniformity, their impact on the GFET performance variability should be considered and compared to that of the channel length. In this work, we assess the impact of the fabrication-related tolerances of GFET-base amplifier geometrical parameters on the RF performance, in terms of the amplifier transit frequency and maximum oscillation frequency, by using a design-of-experiments approach.

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