Time dependent dielectric breakdown of paraelectric barium-strontium-titanate thin film capacitors for memory device applications

Dielectric Breakdown ◽

Memory Device ◽

Time Dependent ◽

Barium Strontium ◽

Thin Film Capacitors ◽

Device Applications ◽

Erratum: “An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead–zirconate–titanate thin film capacitors for memory device applications” [Appl. Phys. Lett. 69, 4011 (1996)]

Applied Physics Letters ◽

10.1063/1.119268 ◽

1997 ◽

Vol 70 (8) ◽

pp. 1058-1058

Author(s):

Jia-lin Chen ◽

Hong-ming Chen ◽

Joseph Ya-min Lee

Keyword(s):

Thin Film ◽

Lead Zirconate Titanate ◽

Dielectric Breakdown ◽

Memory Device ◽

Lead Zirconate ◽

Time Dependent ◽

Thin Film Capacitors ◽

Device Applications ◽

An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead–zirconate–titanate thin film capacitors for memory device applications

Applied Physics Letters ◽

10.1063/1.117854 ◽

1996 ◽

Vol 69 (26) ◽

pp. 4011-4013 ◽

Cited By ~ 28

Author(s):

Jia‐lin Chen ◽

Hong‐ming Chen ◽

Joseph Ya‐min Lee

Keyword(s):

Thin Film ◽

Lead Zirconate Titanate ◽

Dielectric Breakdown ◽

Memory Device ◽

Lead Zirconate ◽

Time Dependent ◽

Thin Film Capacitors ◽

Device Applications ◽

Preparation of barium strontium titanate thin film capacitors on silicon by metallorganic decomposition

Journal of Applied Physics ◽

10.1063/1.357568 ◽

1994 ◽

Vol 76 (4) ◽

pp. 2541-2543 ◽

Cited By ~ 32

Author(s):

Antonio B. Catalan ◽

Joseph V. Mantese ◽

Adolph L. Micheli ◽

Norman W. Schubring ◽

Roger J. Poisson

Keyword(s):

Thin Film ◽

Strontium Titanate ◽

Barium Strontium ◽

Thin Film Capacitors ◽

Leakage Current Characteristics of Lead-Zirconate-Titanate Thin Film Capacitors for Memory Device Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.4056 ◽

1998 ◽

Vol 37 (Part 1, No. 7A) ◽

pp. 4056-4060 ◽

Cited By ~ 31

Author(s):

Hong-ming Chen ◽

Sheng-wei Tsaur ◽

Joseph Ya-min Lee

Keyword(s):

Thin Film ◽

Leakage Current ◽

Lead Zirconate Titanate ◽

Memory Device ◽

Lead Zirconate ◽

Zirconate Titanate ◽

Thin Film Capacitors ◽

Device Applications ◽

Current Characteristics ◽

Dielectric dispersion in Barium Strontium Titanate thin film capacitors with iridium electrodes

Integrated Ferroelectrics ◽

10.1080/10584589808202059 ◽

1998 ◽

Vol 21 (1-4) ◽

pp. 155-166 ◽

Cited By ~ 5

Author(s):

Venkatasubramani Balu ◽

Tung-Sheng Chen ◽

Shylaja Katakam ◽

Jian-Hung Lee ◽

Bruce White ◽

...

Keyword(s):

Thin Film ◽

Strontium Titanate ◽

Dielectric Dispersion ◽

Barium Strontium ◽

Thin Film Capacitors ◽

Thickness Dependence of the Time Dependent Dielectric Breakdown Characteristics of Pb(Zr, Ti)O3Thin Film Capacitors for Memory Device Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.3488 ◽

2000 ◽

Vol 39 (Part 1, No. 6A) ◽

pp. 3488-3491 ◽

Cited By ~ 5

Author(s):

T. K. Kundu ◽

Joseph Ya-min Lee

Keyword(s):

Dielectric Breakdown ◽

Memory Device ◽

Thickness Dependence ◽

Time Dependent ◽

Device Applications

Impact of time dependent dielectric breakdown and stress-induced leakage current on the reliability of high dielectric constant (Ba,Sr)TiO/sub 3/ thin-film capacitors for Gbit-scale DRAMs

IEEE Transactions on Electron Devices ◽

10.1109/16.740900 ◽

1999 ◽

Vol 46 (2) ◽

pp. 342-347 ◽

Cited By ~ 24

Author(s):

S. Yamamichi ◽

A. Yamamichi ◽

Donggun Park ◽

Tsu-Jae King ◽

Chenming Hu

Keyword(s):

Thin Film ◽

Dielectric Constant ◽

Leakage Current ◽

High Dielectric Constant ◽

Dielectric Breakdown ◽

Time Dependent ◽

Thin Film Capacitors ◽

Stress Induced Leakage Current ◽

High Dielectric

Ceramic Transactions Series - Advances in Dielectric Materials and Electronic Devices ◽

High Performance Barium Strontium Titanate Thin Film Capacitors for Decoupling Applications

10.1002/9781118408162.ch27 ◽

2012 ◽

pp. 249-257

Author(s):

N. Kamehara ◽

K. Kurihara ◽

J. D. Baniecki ◽

T. Shioga ◽

K. Nomura ◽

...

Keyword(s):

Thin Film ◽

Strontium Titanate ◽

High Performance ◽

Barium Strontium ◽

Thin Film Capacitors ◽

Impact of time dependent dielectric breakdown and stress induced leakage current on the reliability of (Ba,Sr)TiO/sub 3/ thin film capacitors for Gbit-scale DRAMs

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650377 ◽

2002 ◽

Cited By ~ 2

Author(s):

S. Yamamichi ◽

A. Yamaichi ◽

D. Park ◽

C. Hu

Keyword(s):

Thin Film ◽

Leakage Current ◽

Dielectric Breakdown ◽

Time Dependent ◽

Thin Film Capacitors ◽

Stress Induced Leakage Current

Design and implementation of combline bandpass tunable filter using barium-strontium-titanate thin-film capacitors

Integrated Ferroelectrics ◽

10.1080/10584587.2017.1376973 ◽

2017 ◽

Vol 183 (1) ◽

pp. 126-135 ◽

Cited By ~ 2

Author(s):

Lang Liu ◽

Hongwei Chen ◽

Jihua Zhang ◽

Yu Tan ◽

Wenjun Wang ◽

...

Keyword(s):

Thin Film ◽

Strontium Titanate ◽

Tunable Filter ◽

Design And Implementation ◽

Barium Strontium ◽

Thin Film Capacitors ◽