Impact of time dependent dielectric breakdown and stress induced leakage current on the reliability of (Ba,Sr)TiO/sub 3/ thin film capacitors for Gbit-scale DRAMs

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650377 ◽

2002 ◽

Author(s):

S. Yamamichi ◽

A. Yamaichi ◽

D. Park ◽

C. Hu

Keyword(s):

Thin Film ◽

Leakage Current ◽

Dielectric Breakdown ◽

Time Dependent ◽

Time Dependent Dielectric Breakdown ◽

Thin Film Capacitors ◽

Stress Induced Leakage Current

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Impact of time dependent dielectric breakdown and stress-induced leakage current on the reliability of high dielectric constant (Ba,Sr)TiO/sub 3/ thin-film capacitors for Gbit-scale DRAMs

IEEE Transactions on Electron Devices ◽

10.1109/16.740900 ◽

1999 ◽

Vol 46 (2) ◽

pp. 342-347 ◽

Author(s):

S. Yamamichi ◽

A. Yamamichi ◽

Donggun Park ◽

Tsu-Jae King ◽

Chenming Hu

Keyword(s):

Thin Film ◽

Dielectric Constant ◽

Leakage Current ◽

High Dielectric Constant ◽

Dielectric Breakdown ◽

Time Dependent ◽

Time Dependent Dielectric Breakdown ◽

Thin Film Capacitors ◽

Stress Induced Leakage Current ◽

High Dielectric

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Erratum: “An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead–zirconate–titanate thin film capacitors for memory device applications” [Appl. Phys. Lett. 69, 4011 (1996)]

Applied Physics Letters ◽

10.1063/1.119268 ◽

1997 ◽

Vol 70 (8) ◽

pp. 1058-1058

Author(s):

Jia-lin Chen ◽

Hong-ming Chen ◽

Joseph Ya-min Lee

Keyword(s):

Thin Film ◽

Lead Zirconate Titanate ◽

Dielectric Breakdown ◽

Memory Device ◽

Lead Zirconate ◽

Time Dependent ◽

Time Dependent Dielectric Breakdown ◽

Thin Film Capacitors ◽

Device Applications ◽

Titanate Thin Film

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Time dependent dielectric breakdown and stress induced leakage current characteristics of 8Å EOT HfO2 N-MOSFETS

2010 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2010.5488730 ◽

2010 ◽

Author(s):

Robert O'Connor ◽

Greg Hughes ◽

Thomas Kauerauf ◽

Lars-Ake Ragnarsson

Keyword(s):

Leakage Current ◽

Dielectric Breakdown ◽

Time Dependent ◽

Time Dependent Dielectric Breakdown ◽

Stress Induced Leakage Current ◽

Current Characteristics

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Relation between stress-induced leakage current and time-dependent dielectric breakdown in ultra-thin gate oxides

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/10/302 ◽

1999 ◽

Vol 14 (10) ◽

pp. 892-896 ◽

Author(s):

M Houssa ◽

P W Mertens ◽

M M Heyns

Keyword(s):

Leakage Current ◽

Dielectric Breakdown ◽

Time Dependent ◽

Gate Oxides ◽

Time Dependent Dielectric Breakdown ◽

Stress Induced Leakage Current

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An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead–zirconate–titanate thin film capacitors for memory device applications

Applied Physics Letters ◽

10.1063/1.117854 ◽

1996 ◽

Vol 69 (26) ◽

pp. 4011-4013 ◽

Author(s):

Jia‐lin Chen ◽

Hong‐ming Chen ◽

Joseph Ya‐min Lee

Keyword(s):

Thin Film ◽

Lead Zirconate Titanate ◽

Dielectric Breakdown ◽

Memory Device ◽

Lead Zirconate ◽

Time Dependent ◽

Time Dependent Dielectric Breakdown ◽

Thin Film Capacitors ◽

Device Applications ◽

Titanate Thin Film

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Time dependent dielectric breakdown of paraelectric barium-strontium-titanate thin film capacitors for memory device applications

Journal of Applied Physics ◽

10.1063/1.368765 ◽

1998 ◽

Vol 84 (9) ◽

pp. 5155-5157 ◽

Author(s):

Shu-chun Huang ◽

Hong-ming Chen ◽

Shich Chuan Wu ◽

Joseph Ya-min Lee

Keyword(s):

Thin Film ◽

Barium Strontium Titanate ◽

Dielectric Breakdown ◽

Memory Device ◽

Time Dependent ◽

Time Dependent Dielectric Breakdown ◽

Barium Strontium ◽

Thin Film Capacitors ◽

Device Applications ◽

Titanate Thin Film

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Phenomenological classification of stress-induced leakage current and time-dependent dielectric breakdown mechanism

Journal of Applied Physics ◽

10.1063/1.3259386 ◽

2009 ◽

Vol 106 (10) ◽

pp. 104103 ◽

Author(s):

Hiroshi Miyazaki ◽

Daisuke Kodama ◽

Naohito Suzumura

Keyword(s):

Leakage Current ◽

Dielectric Breakdown ◽

Time Dependent ◽

Time Dependent Dielectric Breakdown ◽

Breakdown Mechanism ◽

Stress Induced Leakage Current

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Time-Dependent Dielectric Breakdown and Stress-Induced Leakage Current Characteristics of 0.7-nm-EOT $\hbox{HfO}_{2}$ pFETs

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2011.2149527 ◽

2011 ◽

Vol 11 (2) ◽

pp. 290-294 ◽

Author(s):

Robert O'Connor ◽

Greg Hughes ◽

Thomas Kauerauf

Keyword(s):

Leakage Current ◽

Dielectric Breakdown ◽

Time Dependent ◽

Time Dependent Dielectric Breakdown ◽

Stress Induced Leakage Current ◽

Current Characteristics

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Noise Analysis of the Leakage Current in Time-Dependent Dielectric Breakdown in a GaN SLCFET

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3064793 ◽

2021 ◽

Vol 68 (5) ◽

pp. 2220-2225

Author(s):

Stefano Dalcanale ◽

Michael J. Uren ◽

Josephine Chang ◽

Ken Nagamatsu ◽

Justin A. Parke ◽

...

Keyword(s):

Leakage Current ◽

Dielectric Breakdown ◽

Noise Analysis ◽

Time Dependent ◽

Time Dependent Dielectric Breakdown

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Field-enhanced Si–Si bond-breakage mechanism for time-dependent dielectric breakdown in thin-film SiO2 dielectrics

Applied Physics Letters ◽

10.1063/1.119739 ◽

1997 ◽

Vol 71 (8) ◽

pp. 1101-1103 ◽

Author(s):

J. W. McPherson ◽

V. K. Reddy ◽

H. C. Mogul

Keyword(s):

Thin Film ◽

Dielectric Breakdown ◽

Time Dependent ◽

Time Dependent Dielectric Breakdown ◽

Bond Breakage ◽

Breakage Mechanism

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