Differential alternating current chip calorimeter for in situ investigation of vapor-deposited thin films

2012 ◽  
Vol 83 (3) ◽  
pp. 033902 ◽  
Author(s):  
M. Ahrenberg ◽  
E. Shoifet ◽  
K. R. Whitaker ◽  
H. Huth ◽  
M. D. Ediger ◽  
...  
1995 ◽  
Vol 254 (1-2) ◽  
pp. 139-146 ◽  
Author(s):  
E. Matthias ◽  
J. Siegel ◽  
S. Petzoldt ◽  
M. Reichling ◽  
H. Skurk ◽  
...  

2017 ◽  
Vol 32 (10) ◽  
pp. 1899-1907 ◽  
Author(s):  
Dounya Barrit ◽  
Arif D. Sheikh ◽  
Rahim Munir ◽  
Jérémy M. Barbé ◽  
Ruipeng Li ◽  
...  

Abstract


1989 ◽  
Vol 151 ◽  
Author(s):  
P. Baumgart ◽  
B. Hillebrands ◽  
J. V. Harzer ◽  
G. Güntherodt

The in-situ observation of magnetostatic spin waves by Brillouin spectroscopy offers a versatile dynamical probe for the investigation of magnetic properties of thin films. The measured spin wave spectra of thin films contain a variety of information about their magnetic as well as structural properties. The frequency of a spin wave allows to determine, e.g., the g-factor, the magnetic anisotropy constants and also the saturation magnetization. The spectral line shape allows conclusions about the film quality, i.e., steps or islands. Furthermore, the unidirectional propagation of the surface spin wave with respect to the magnetization allows to measure the coercitivity field of a film. The latter can be used as an additional characterization parameter of a magnetic film.


2019 ◽  
Vol 37 (3) ◽  
pp. 031510 ◽  
Author(s):  
Wolfram Calvet ◽  
Bünyamin Ümsür ◽  
Alexander Steigert ◽  
Karsten Prietzel ◽  
Dieter Greiner ◽  
...  

2009 ◽  
Vol 517 (5) ◽  
pp. 1681-1685 ◽  
Author(s):  
Jens Schaufler ◽  
Karsten Durst ◽  
Orlaw Massler ◽  
Mathias Göken

1997 ◽  
Vol 485 ◽  
Author(s):  
D. Wolf ◽  
G. Müller

AbstractStudies of the reaction path during annealing of Cu-In-Se thin films for solar cell absorbers have been limited up to now to ex-situ analyses of the phase composition by X-Ray Diffraction (XRD) after processing by a specific temperature-time program. As an indirect method, the application of ex-situ XRD is not sufficient for the determination of reaction temperatures and reaction times for setting up a general model of CIS-formation.We show in this paper that the use of a calorimetric method (Thin Film Calorimetry, TFC) offers the advantage of a direct (in-situ) observation of thin film reactions. Special care is taken to use film thicknesses of practical interest for industrial application (1.5 – 3 μm). In a first step we show results of binary reactions in the Cu-In, In-Se and Cu-Se systems. Their knowledge is necessary for understanding the processes involved in the ternary CIS-layers. It turned out that thin Cu-In and Cu-Se films react already at room temperature and behave as predicted by the bulk equilibrium phase diagrams during heating. In-Se thin films show prominent exothermic reactions starting with the melting of In. The first phase to be formed is generally In2Se which is then converted to more Se-rich compounds. In ternary Cu-In-Se films (Cu/In = 1.00) we observe transitions of the Cu-Se-system which can be attributed to the decomposition of CuSe2 and CuSe. Consequences for the model of improved CIS-growth by a Cu-Se flux agent are discussed.


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