scholarly journals Processing of PbTiO3 thin films. II. In situ investigation of stress relaxation

1996 ◽  
Vol 14 (1) ◽  
pp. 7-12 ◽  
Author(s):  
Chen C. Li ◽  
Seshu B. Desu
2010 ◽  
Vol 89-91 ◽  
pp. 91-96
Author(s):  
G.R. Chang ◽  
Fei Ma ◽  
B. Ma ◽  
Ke Wei Xu

An in-situ investigation was performed on the stress relaxation of sandwiched Si3N4/Al/Si3N4 thin films by using multi-beam optical stress sensor (MOSS), a developed technique for substrate curvature measurement. Furthermore, the microstructures of the thin films were characterized by several analyzing techniques, such as X-ray Photoelectron Spectroscopy (XPS), Field Emission Scanning Electron Microscope (FE-SEM) and X-ray energy dispersive spectroscopy (EDS). The results indicated sharp rise and drop of the residual stress due to the cracks of Si3N4 surface layer or the separation of Al particles during annealing process. An appropriate model was suggested to interpret this phenomenon.


1991 ◽  
Vol 239 ◽  
Author(s):  
A. Mutscheller ◽  
L. A. Clevenger ◽  
J.M.E. Harper ◽  
C. Cabrai ◽  
K. Barmakt

AbstractWe demonstrate that the high temperature polymorphic tantalum phase transition from the tetragonal beta phase to the cubic alpha phase causes complete stress relaxation and a large decrease in the resistance of tantalum thin films. 100 nm beta tantalum thin films were deposited onto thermally oxidized <100> silicon wafers by dc magnetron sputtering with argon. In situ stress and resistance at temperature were measured during temperature-ramped annealing in purified He. Upon heating, films that were initially compressively stressed showed increasing compressive stress due to thermo-elastic deformation from 25 to 550°C, slight stress relief due to plastic deformation from 550 to 700°C and complete stress relief due to the beta to alpha phase transformation at approximately 700–800°C. Incomplete compressive stress relaxation was observed at high temperatures if the film was initially deposited in the alpha phase or if the beta phase did not completely transform into alpha by 800°C. This incomplete beta to alpha phase transition was most commonly observed on samples that had radio frequency substrate bias greater than -100 V. We conclude that the main stress relief mechanism for tantalum thin films is the beta to alpha phase transformation that occurs at 700 to 800°C.


2012 ◽  
Vol 83 (3) ◽  
pp. 033902 ◽  
Author(s):  
M. Ahrenberg ◽  
E. Shoifet ◽  
K. R. Whitaker ◽  
H. Huth ◽  
M. D. Ediger ◽  
...  

1995 ◽  
Vol 254 (1-2) ◽  
pp. 139-146 ◽  
Author(s):  
E. Matthias ◽  
J. Siegel ◽  
S. Petzoldt ◽  
M. Reichling ◽  
H. Skurk ◽  
...  

2017 ◽  
Vol 32 (10) ◽  
pp. 1899-1907 ◽  
Author(s):  
Dounya Barrit ◽  
Arif D. Sheikh ◽  
Rahim Munir ◽  
Jérémy M. Barbé ◽  
Ruipeng Li ◽  
...  

Abstract


1989 ◽  
Vol 151 ◽  
Author(s):  
P. Baumgart ◽  
B. Hillebrands ◽  
J. V. Harzer ◽  
G. Güntherodt

The in-situ observation of magnetostatic spin waves by Brillouin spectroscopy offers a versatile dynamical probe for the investigation of magnetic properties of thin films. The measured spin wave spectra of thin films contain a variety of information about their magnetic as well as structural properties. The frequency of a spin wave allows to determine, e.g., the g-factor, the magnetic anisotropy constants and also the saturation magnetization. The spectral line shape allows conclusions about the film quality, i.e., steps or islands. Furthermore, the unidirectional propagation of the surface spin wave with respect to the magnetization allows to measure the coercitivity field of a film. The latter can be used as an additional characterization parameter of a magnetic film.


2019 ◽  
Vol 37 (3) ◽  
pp. 031510 ◽  
Author(s):  
Wolfram Calvet ◽  
Bünyamin Ümsür ◽  
Alexander Steigert ◽  
Karsten Prietzel ◽  
Dieter Greiner ◽  
...  

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