Low temperature silicon epitaxy by photo- and plasma-CVD

1988 ◽  
Author(s):  
A. Yamada ◽  
A. Satoh ◽  
M. Konagai ◽  
K. Takahashi
Keyword(s):  
Low Temperature ◽  
Plasma Cvd ◽  
Silicon Epitaxy

Very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH4-PH3-H2Reactants for Bipolar Devices

1988 ◽  
Vol 27 (Part 2, No. 4) ◽  
pp. L493-L495 ◽  
Author(s):  
Tsuyoshi Uematsu ◽  
Sunao Matsubara ◽  
Masao Kondo ◽  
Masao Tamura ◽  
Tadashi Saitoh
Keyword(s):  
Low Temperature ◽  
Plasma Cvd ◽  
Silicon Epitaxy ◽  
Bipolar Devices ◽  
Very Low Temperature

Low-temperature graphene synthesis using microwave plasma CVD

2013 ◽  
Vol 46 (6) ◽  
pp. 063001 ◽  
Author(s):  
Takatoshi Yamada ◽  
Jaeho Kim ◽  
Masatou Ishihara ◽  
Masataka Hasegawa
Keyword(s):  
Low Temperature ◽  
Microwave Plasma ◽  
Plasma Cvd ◽  
Graphene Synthesis ◽  
Microwave Plasma Cvd

Remote Plasma-Enhanced Chemical Vapor Deposition of Epitaxial Silicon on Silicon (100) at 150°C

1989 ◽  
Vol 165 ◽  
Author(s):  
T. Hsu ◽  
B. Anthony ◽  
L. Breaux ◽  
S. Banerjee ◽  
A. Tasch
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Hydrogen Plasma ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Silicon ◽  
Remote Plasma ◽  
Silicon Epitaxy

AbstractLow temperature processing will be an essential requirement for the device sizes, structures, and materials being considered for future integrated circuit applications. In particular, low temperature silicon epitaxy will be required for new devices and technologies utilizing three-dimensional epitaxial structures and silicon-based heterostructures. A novel technique, Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD), has achieved epitaxial silicon films at a temperature as low as 150°C which is believed to be the lowest temperature to date for silicon epitaxy. The process relies on a stringent ex-situ preparation procedure, a controlled wafer loading sequence, and an in-situ remote hydrogen plasma clean of the sample surface, all of which provide a surface free of carbon, oxygen, and other contaminants. The system is constructed using ultra-high vacuum technology (10-10 Torr) to achieve and maintain contaminantion-free surfaces and films. Plasma excitation of argon is used in lieu of thermal energy to provide energetic species that dissociate silane and affect surface chemical processes. Excellent crystallinity is observed from the thin films grown at 150°C using the analytical techniques of Transmission Electron Microscopy (TEM) and Nomarski interference contrast microscopy after defect etching.

Low temperature growth of graphene film by microwave assisted surface wave plasma CVD for transparent electrode application

RSC Advances ◽  
2012 ◽  
Vol 2 (7) ◽  
pp. 2815 ◽  
Author(s):  
Golap Kalita ◽  
Koichi Wakita ◽  
Masayoshi Umeno
Keyword(s):  
Surface Wave ◽  
Low Temperature ◽  
Graphene Film ◽  
Transparent Electrode ◽  
Plasma Cvd ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Microwave Assisted

Photo-Enhanced Boron-Doping in Low-Temperature Silicon Epitaxy and Its FTIR Study

1988 ◽  
Author(s):  
S. Watanabe ◽  
T. Yamazaki ◽  
Y. Nara ◽  
T. Ito
Keyword(s):  
Low Temperature ◽  
Boron Doping ◽  
Ftir Study ◽  
Silicon Epitaxy

Low temperature coating of aluminium alloys by plasma-CVD using metallo-organic compounds

1998 ◽  
Vol 98 (1-3) ◽  
pp. 1534-1540 ◽  
Author(s):  
K.-T. Rie ◽  
J. Wöhle ◽  
A. Gebauer
Keyword(s):  
Low Temperature ◽  
Organic Compounds ◽  
Aluminium Alloys ◽  
Plasma Cvd
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