Space-charge recombination currents and their influence on the dc current gain of AlGaAs/GaAs Pnp heterojunction bipolar transistors

1999 ◽  
Vol 86 (12) ◽  
pp. 7065-7070 ◽  
Author(s):  
S. Ekbote ◽  
M. Cahay ◽  
K. Roenker ◽  
T. Kumar
Keyword(s):  
Space Charge ◽  
Heterojunction Bipolar Transistors ◽  
Charge Recombination ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Dc Current

Current Gain Simulation of Npn AlGaN/GaN Heterojunction Bipolar Transistors

2000 ◽  
Vol 622 ◽  
Author(s):  
C. Monier ◽  
S. J. Pearton ◽  
A. G. Baca ◽  
P. C. Chang ◽  
L. Zhang ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Drift Diffusion Model ◽  
Base Resistance ◽  
Deep Acceptor ◽  
Transport Enhancement ◽  
Deep Acceptor Level ◽  
High Base ◽  
Dc Current

ABSTRACTA drift-diffusion model has been used to explore the performance capabilities of Npn AlGaN/GaN heterojunction bipolar transistors. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain β is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base.

scholarly journals A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
John T Torvik ◽  
M. Leksono ◽  
J. I. Pankove ◽  
B. Van Zeghbroeck
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Bipolar Transistors ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Device Structure ◽  
Fabrication And Characterization ◽  
Dc Current

We report on the fabrication and characterization of GaN/4H-SiC n-p-n heterojunction bipolar transistors (HBTs). The device structure consists of an n-SiC collector, p-SiC base, and selectively grown n-GaN emitter. The HBTs were grown using metalorganic chemical vapor deposition on SiC substrates. Selective GaN growth through a SiO2 mask was used to avoid damage that would be caused by reactive ion etching. In this report, we demonstrate common base transistor operation with a modest dc current gain of 15 at room temperature and 3 at 300°C.

Current gain increase in AlGaAs/GaAs heterojunction bipolar transistors using AlGaAs layer overgrowth

1994 ◽  
Vol 65 (11) ◽  
pp. 1403-1405 ◽  
Author(s):  
S. R. D. Kalingamudali ◽  
A. C. Wismayer ◽  
R. C. Woods ◽  
J. S. Roberts
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Algaas Layer

Prevention of InP/InGaAs/InP Double Heterojunction Bipolar Transistors from Current Gain Reduction during Passivation

2004 ◽  
Vol 833 ◽  
Author(s):  
Byoung-Gue Min ◽  
Jong-Min Lee ◽  
Seong-Il Kim ◽  
Chul-Won Ju ◽  
Kyung-Ho Lee
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Oxide ◽  
Surface Recombination ◽  
Surface States ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Current Gain ◽  
Device Structure ◽  
Double Heterojunction ◽  
Gain Reduction

ABSTRACTA significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the p-type InGaAs base layer according to the epi-structure and device structure. The deposition conditions such as deposition temperature, kinds of materials (silicon oxide, silicon nitride and aluminum oxide) and film thickness were not major variables to affect the device performance. The gain reduction was prevented by the BOE treatment before the passivation. A possible explanation of this behavior is that unstable non-stoichiometric surface states produced by excess In, Ga, or As after mesa etching are eliminated by BOE treatment and reduce the surface recombination sites.

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