ArF excimer laser processing of PECVD and LECVD silicon oxynitride thin films: Local changes in DUV transparency and composition

1989 ◽  
Author(s):  
J. Neal Cox ◽  
L. Friedrich ◽  
L. L. Heath ◽  
B. L. Sun ◽  
Robert Kolenkow
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Laser Processing ◽  
Silicon Oxynitride ◽  
Arf Excimer Laser

Pulsed Excimer Laser Processing of AlN/GaN Thin Films

1996 ◽  
Vol 449 ◽  
Author(s):  
W. S. Wong ◽  
L. F. Schloss ◽  
G.S. Sudhir ◽  
B. P. Linder ◽  
K-M. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Laser Processing ◽  
Laser Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Emission Peak ◽  
Dopant Activation ◽  
Pulsed Laser Annealing

ABSTRACTA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

Silicon Dioxide Thin Films Prepared from Silicon Tetraacetate Using ArF Excimer Laser by Chemical Vapor Deposition

1998 ◽  
Vol 37 (Part 1, No. 9A) ◽  
pp. 4938-4942 ◽  
Author(s):  
Atsushi Maruyama ◽  
Naoki Tanaka ◽  
Kazuhiro Nakata ◽  
Ken Yukimura ◽  
Shinzo Yoshikado ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Excimer Laser ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Arf Excimer Laser

Preparation of PbTiO3 Thin Films Using a Coating Photolysis Process with ArF Excimer Laser

2000 ◽  
Vol 39 (Part 2, No. 8B) ◽  
pp. L866-L868 ◽  
Author(s):  
Tetsuo Tsuchiya ◽  
Akio Watanabe ◽  
Yoji Imai ◽  
Hiroyuki Niino ◽  
Iwao Yamaguchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Arf Excimer Laser

Excimer laser processing for surface improvement of tin oxide thin films

1993 ◽  
Vol 74 (1) ◽  
pp. 645-648 ◽  
Author(s):  
H. Galindo ◽  
A. B. Vincent ◽  
J. C. Sánchez‐R. ◽  
L. D. Laude
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Tin Oxide ◽  
Laser Processing ◽  
Oxide Thin Films ◽  
Surface Improvement

One-step growth of polycrystalline silicon thin films at low-temperature by ArF excimer laser-induced photo-CVD

1992 ◽  
Vol 54 ◽  
pp. 35-40 ◽  
Author(s):  
M. Elliq ◽  
E. Fogarassy ◽  
C. Fuchs ◽  
J.P. Stoquert ◽  
S. de Unamuno ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films ◽  
One Step ◽  
Step Growth ◽  
Arf Excimer Laser

Preparation of metal oxide thin films using coating photolysis process with ArF excimer laser

2000 ◽  
Author(s):  
Tetsuo Tsuchiya ◽  
Akio Watanabe ◽  
Yoji Imai ◽  
Hiroyuki Niino ◽  
Akira Yabe ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Oxide ◽  
Excimer Laser ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Arf Excimer Laser
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