Valence band discontinuity at the ZnTe/CdTe interface: Making ohmic contact to P-type CdTe

1992 ◽  
Author(s):  
David W. Niles ◽  
Hartmut Höchst ◽  
Dennis Rioux
2002 ◽  
Vol 46 (5) ◽  
pp. 689-693 ◽  
Author(s):  
S.E. Mohney ◽  
B.A. Hull ◽  
J.Y. Lin ◽  
J. Crofton

2014 ◽  
Vol 53 (5S3) ◽  
pp. 05HA04 ◽  
Author(s):  
Jae-Kwan Kim ◽  
Dong-min Lee ◽  
Sung-Nam Lee ◽  
Keun-Man Song ◽  
Jae-Sik Yoon ◽  
...  
Keyword(s):  

1996 ◽  
Vol 54 (4) ◽  
pp. 2718-2722 ◽  
Author(s):  
L. Wang ◽  
S. Sivananthan ◽  
R. Sporken ◽  
R. Caudano

2009 ◽  
Vol 79-82 ◽  
pp. 1253-1256 ◽  
Author(s):  
Li Guan ◽  
Qiang Li ◽  
Xu Li ◽  
Jian Xin Guo ◽  
Bo Geng ◽  
...  

In the present paper, the lattice structure, band structure and density of state of pure and P-doped ZnO are calculated by first-principle method based on density functional theory. By analyzing the Mulliken charge overlap population and bond length, it is found that the bond of P-Zn is longer and stronger than O-Zn bond for PO-ZnO. But for PZn-ZnO, the O-P bond becomes shorter and more powerful than O-Zn bond. Also, weak O-O bonds are formed in this case. Our results show that the final total energy of PO-ZnO is lower than PZn-ZnO. The lattice structure of PO-ZnO is more stability than PZn-ZnO. For PO-ZnO, The Fermi level moves into the valence band, which expresses that the holes appear on the top of valence band and thus the PO-ZnO exhibits p-type conductivity. For PZn-ZnO, the Fermi level moves up to the conductor band and the total density of states shifts to the lower energy region, thus PZn-ZnO shows the n-type conductivity.


2005 ◽  
Vol 493 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
J.D. Hwang ◽  
W.T. Chang ◽  
K.H. Hseih ◽  
G.H. Yang ◽  
C.Y. Wu ◽  
...  

2017 ◽  
Vol 4 (9) ◽  
pp. 1458-1464 ◽  
Author(s):  
M.-Y. Lee ◽  
D. I. Bilc ◽  
E. Symeou ◽  
Y.-C. Lin ◽  
I.-C. Liang ◽  
...  

A new p-type semiconductor Ba3Ag3InTe6 with transport properties dominated by the layer [Ag3Te4]5− distributed in the valence band.


2020 ◽  
Vol 117 (15) ◽  
pp. 153101
Author(s):  
Kei Takeyama ◽  
Rai Moriya ◽  
Kenji Watanabe ◽  
Satoru Masubuchi ◽  
Takashi Taniguchi ◽  
...  

1999 ◽  
Vol 595 ◽  
Author(s):  
P. Ruterana ◽  
G. Nouet ◽  
Th. Kehagias ◽  
Ph. Komninou ◽  
Th. Karakostas ◽  
...  

AbstractWhen the stoichiometric TiN was deposited directly on GaN, we obtained columnar TiN grains of 5-20 nm section which cross the whole film thickness and are rotated mostly around the [111] axis. The conventional epitaxial relationship is obtained and no amorphous patches are observed at the interface. The deposition of TiN on Si doped GaN layers lead to the formation of an ohmic contact, whereas we obtain a rectifying contact on p type layers.


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