Modeling of low-frequency noise in metal-oxide-semiconductor field-effect transistor with electron trapping-detrapping at oxide-silicon interface

H. Wong; Y.C. Cheng

doi:10.1109/16.119029

Modeling of low-frequency noise in metal-oxide-semiconductor field-effect transistor with electron trapping-detrapping at oxide-silicon interface

IEEE Transactions on Electron Devices ◽

10.1109/16.119029 ◽

1991 ◽

Vol 38 (8) ◽

pp. 1883-1888 ◽

Cited By ~ 6

Author(s):

H. Wong ◽

Y.C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Trapping ◽

Frequency Noise ◽

Effect Transistor ◽

Silicon Interface

Studies on Metal–Oxide–Semiconductor Field-Effect Transistor Low-Frequency Noise for Electrometer Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3606 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3606-3608 ◽

Cited By ~ 3

Author(s):

Nicolas Clement ◽

Hiroshi Inokawa ◽

Yukinori Ono

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Effect Transistor

Degradation of low frequency noise in SiGe- and SiGeC-surface channel p-type metal-oxide-semiconductor field effect transistor due to consuming the Si cap

Applied Physics Letters ◽

10.1063/1.2819071 ◽

2007 ◽

Vol 91 (23) ◽

pp. 233505 ◽

Cited By ~ 4

Author(s):

R. Yang ◽

Y. Z. Xiong ◽

W. Y. Loh ◽

J. D. Ye ◽

M. B. Yu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Effect Transistor ◽

P Type

Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.04fd19 ◽

2018 ◽

Vol 57 (4S) ◽

pp. 04FD19 ◽

Cited By ~ 1

Author(s):

Keiichi Maekawa ◽

Hideki Makiyama ◽

Yoshiki Yamamoto ◽

Takumi Hasegawa ◽

Shinobu Okanishi ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Comprehensive Analysis ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Fully Depleted ◽

Effect Transistor

A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.3068752 ◽

2009 ◽

Vol 94 (1) ◽

pp. 013511 ◽

Cited By ~ 13

Author(s):

Feng Zhu ◽

Han Zhao ◽

I. Ok ◽

H. S. Kim ◽

J. Yum ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Interface Passivation ◽

Silicon Interface

Direct calculation of metal–oxide–semiconductor field effect transistor high frequency noise parameters

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581021 ◽

1998 ◽

Vol 16 (2) ◽

pp. 850-854 ◽

Cited By ~ 9

Author(s):

C. H. Chen ◽

M. J. Deen

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistor ◽

Direct Calculation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

High Frequency Noise ◽

Effect Transistor

Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3002732 ◽

2020 ◽

Vol 67 (8) ◽

pp. 3062-3068 ◽

Cited By ~ 2

Author(s):

K. Takakura ◽

V. Putcha ◽

E. Simoen ◽

A. R. Alian ◽

U. Peralagu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Effect Transistor

Low Frequency Noise Characterization in Metal Oxide Semiconductor Field Effect Transistor Based Charge Transfer Device at Room and Low Temperatures

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.034203 ◽

2010 ◽

Vol 49 (3) ◽

pp. 034203 ◽

Cited By ~ 1

Author(s):

Vipul Singh ◽

Hiroshi Inokawa ◽

Tetsuo Endoh ◽

Hiroaki Satoh

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Effect Transistor ◽

Charge Transfer Device ◽

Noise Characterization ◽

Transfer Device

Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide

Applied Physics Letters ◽

10.1063/1.2762295 ◽

2007 ◽

Vol 91 (4) ◽

pp. 043507 ◽

Cited By ~ 9

Author(s):

F. Zhu ◽

S. Koveshnikov ◽

I. Ok ◽

H. S. Kim ◽

M. Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Interface Passivation ◽

Silicon Interface

Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Journal of Applied Physics ◽

10.1063/5.0027214 ◽

2020 ◽

Vol 128 (24) ◽

pp. 244501

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

N. J. Harmon ◽

M. E. Flatté

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Zero Field ◽

Charge Pumping ◽

Effect Transistor