Aging process of unipolar resistive switching in microscale cylindrical Fe-base alloy/TiO2/Au-cells

2012 ◽  
Vol 112 (3) ◽  
pp. 034507 ◽  
Author(s):  
M. A. Miranda ◽  
C. Gómez-Polo ◽  
A. Gil
Keyword(s):  
Resistive Switching ◽  
Aging Process ◽  
Base Alloy ◽  
Unipolar Resistive Switching

scholarly journals Switching Power Universality in Unipolar Resistive Switching Memories

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Jongmin Kim ◽  
Kyooho Jung ◽  
Yongmin Kim ◽  
Yongcheol Jo ◽  
Sangeun Cho ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Power ◽  
Unipolar Resistive Switching

Improving Unipolar Resistive Switching Uniformity with Cone-Shaped Conducting Filaments and Its Logic-In-Memory Application

2018 ◽  
Vol 10 (7) ◽  
pp. 6453-6462 ◽  
Author(s):  
Shuang Gao ◽  
Gang Liu ◽  
Qilai Chen ◽  
Wuhong Xue ◽  
Huali Yang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Unipolar Resistive Switching

Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO 2 /Pt memory device

2016 ◽  
Vol 360 ◽  
pp. 338-341 ◽  
Author(s):  
Lei Zhang ◽  
Haiyang Xu ◽  
Zhongqiang Wang ◽  
Hao Yu ◽  
Jiangang Ma ◽  
...  
Keyword(s):  
Double Layer ◽  
Resistive Switching ◽  
Memory Device ◽  
Unipolar Resistive Switching

Unipolar Resistive Switching Properties of Diamondlike Carbon-Based RRAM Devices

2011 ◽  
Vol 32 (6) ◽  
pp. 803-805 ◽  
Author(s):  
Di Fu ◽  
Dan Xie ◽  
Tingting Feng ◽  
Chenhui Zhang ◽  
Jiebin Niu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Diamondlike Carbon ◽  
Unipolar Resistive Switching ◽  
Carbon Based

Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS2/Au structure for multilevel flexible memory

2018 ◽  
Vol 6 (27) ◽  
pp. 7195-7200 ◽  
Author(s):  
Xiaoning Zhao ◽  
Zeying Fan ◽  
Haiyang Xu ◽  
Zhongqiang Wang ◽  
Jiaqi Xu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Flexible Structure ◽  
Voltage Polarity ◽  
Multilevel Memory ◽  
Unipolar Resistive Switching

A new operating scheme for voltage-polarity-controlled multilevel memory based on Ag/MoS2/Au flexible structure with reversible alternation between bipolar and unipolar resistive switching modes was demonstrated.

scholarly journals Memory Devices via Unipolar Resistive Switching in Symmetric Organic–Inorganic Perovskite Nanoscale Heterolayers

2020 ◽  
Vol 3 (12) ◽  
pp. 11889-11896
Author(s):  
Xianxi Yu ◽  
Tangyao Shen ◽  
Chunqin Zhu ◽  
Qi Zeng ◽  
Anran Yu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Unipolar Resistive Switching
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