Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence

2012 ◽  
Vol 101 (21) ◽  
pp. 212106 ◽  
Author(s):  
Y. Ishikawa ◽  
M. Tashiro ◽  
K. Hazu ◽  
K. Furusawa ◽  
H. Namita ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Time Resolved ◽  
Luminescence Efficiency

Characterization of GaN Films on Sapphire by Cathodoluminescence

1996 ◽  
Vol 449 ◽  
Author(s):  
L.-L. Chao ◽  
G. S. Cargill ◽  
C. Kothandaraman
Keyword(s):  
Deep Level ◽  
Luminescent Properties ◽  
Deep Level Emission ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Luminescence Efficiency ◽  
Si Doped

ABSTRACTCathodoluminescence (CL) spectroscopy and microscopy were used to study the luminescent properties of a variety of GaN films, both Si-doped and unintentionally-doped, grown on sapphire substrates. A narrow and intense near band-edge emission was found in the CL spectrum of each film examined, and deep-level emission was also observed for some of the films. The luminescence efficiency of near band-edge emission increased with a faster rate than that of deep-level emission when the pumping current was increased. Spatial nonuniformities of luminescence were observed in monochromatic CL microscopy, and microstructures were observed in scanning electron microscopy. No correlations between luminescence features and microstructural features were seen. Degradation of near band-edge luminescence was observed, accompanied by growth of deep-level emission.

Stable enhancement of near-band-edge emission of ZnO nanowires by hydrogen incorporation

2010 ◽  
Vol 21 (6) ◽  
pp. 065709 ◽  
Author(s):  
A Dev ◽  
R Niepelt ◽  
J P Richters ◽  
C Ronning ◽  
T Voss
Keyword(s):  
Zno Nanowires ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Hydrogen Incorporation

Enhancement of the near-band-edge emission of CuI by Cl doping

2019 ◽  
Vol 205 ◽  
pp. 337-341 ◽  
Author(s):  
Fengrui Li ◽  
Mu Gu ◽  
Xiaolin Liu ◽  
Shuangqiang Yue ◽  
Jiajie Zhu ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission

Enhanced near-band-edge emission from a-plane ZnO thin films on SrTiO3 substrates

2015 ◽  
Vol 121 (1) ◽  
pp. 17-21 ◽  
Author(s):  
Guangheng Wu ◽  
Xiang Li ◽  
Meifeng Liu ◽  
Zhibo. Yan ◽  
Jun-Ming Liu
Keyword(s):  
Thin Films ◽  
Band Edge ◽  
Zno Thin Films ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission

Liquid‐phase epitaxy of heavily Mg‐doped GaAs: Formation of a new near‐band‐edge emission exclusively pertinent to acceptor impurities

1987 ◽  
Vol 62 (8) ◽  
pp. 3212-3215 ◽  
Author(s):  
Masahiko Mori ◽  
Yunosuke Makita ◽  
Yoshio Okada ◽  
Nobukazu Ohnishi ◽  
Yoshinobu Mitsuhashi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Mg Doped

Temperature-dependent shifts of near band-edge emission and their second-order diffraction for ZnO nanorods

2012 ◽  
Vol 34 (11) ◽  
pp. 1917-1920 ◽  
Author(s):  
Jianguo Lv ◽  
Changlong Liu ◽  
Wanbing Gong ◽  
Zhenfa Zi ◽  
Xiaoshuang Chen ◽  
...  
Keyword(s):  
Zno Nanorods ◽  
Second Order ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Temperature Dependent ◽  
Edge Emission ◽  
Order Diffraction

Near band-edge emission in strained MBE-grown ZnS

1996 ◽  
Vol 159 (1-4) ◽  
pp. 89-93 ◽  
Author(s):  
K.B. Ozanyan ◽  
L. May ◽  
J.E. Nicholls ◽  
J.H.C. Hogg ◽  
W.E. Hagston ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission
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