Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices

Applied Physics Letters ◽

10.1063/1.4770071 ◽

2012 ◽

Vol 101 (23) ◽

pp. 232109 ◽

Author(s):

Xinwei Wang ◽

Omair I. Saadat ◽

Bin Xi ◽

Xiabing Lou ◽

Richard J. Molnar ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Atomic Layer ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Layer Deposition

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AlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with thermal atomic layer deposition AlN gate dielectric

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.096502 ◽

2018 ◽

Vol 57 (9) ◽

pp. 096502 ◽

Author(s):

Lin-Qing Zhang ◽

Peng-Fei Wang

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Gate Dielectric ◽

Atomic Layer ◽

High Electron Mobility Transistor ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al 2 O 3 Laminated Dielectric by Atomic Layer Deposition

Chinese Physics Letters ◽

10.1088/0256-307x/29/2/028501 ◽

2012 ◽

Vol 29 (2) ◽

pp. 028501 ◽

Author(s):

Zhi-Wei Bi ◽

Yue Hao ◽

Qian Feng ◽

Zhi-Yuan Gao ◽

Jin-Cheng Zhang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Atomic Layer ◽

High Electron Mobility Transistor ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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Atomic layer deposition of ZrO2as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

Applied Physics Letters ◽

10.1063/1.4824445 ◽

2013 ◽

Vol 103 (14) ◽

pp. 142109 ◽

Author(s):

G. Ye ◽

H. Wang ◽

S. Arulkumaran ◽

G. I. Ng ◽

R. Hofstetter ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Gate Dielectrics ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Layer Deposition

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Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.094101 ◽

2017 ◽

Vol 56 (9) ◽

pp. 094101

Author(s):

Yu Sheng Chiu ◽

Quang Ho Luc ◽

Yueh Chin Lin ◽

Jui Chien Huang ◽

Chang Fu Dee ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

Rf Power ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Layer Deposition

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Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides

Applied Physics Express ◽

10.7567/apex.8.084101 ◽

2015 ◽

Vol 8 (8) ◽

pp. 084101 ◽

Author(s):

Po-Chun Yeh ◽

Yun-Wei Lin ◽

Yue-Lin Huang ◽

Jui-Hung Hung ◽

Bo-Ren Lin ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Layer Deposition ◽

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Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2gate dielectric deposited by atomic layer deposition

Applied Physics Express ◽

10.7567/apex.9.071003 ◽

2016 ◽

Vol 9 (7) ◽

pp. 071003 ◽

Author(s):

Travis J. Anderson ◽

Virginia D. Wheeler ◽

David I. Shahin ◽

Marko J. Tadjer ◽

Andrew D. Koehler ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors ◽

Layer Deposition

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In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4929818 ◽

2015 ◽

Vol 107 (8) ◽

pp. 081608 ◽

Author(s):

Xiaoye Qin ◽

Robert M. Wallace

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Layer Deposition

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Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics

physica status solidi (c) ◽

10.1002/pssc.201001064 ◽

2011 ◽

Vol 8 (7-8) ◽

pp. 2445-2447 ◽

Author(s):

Casey Kirkpatrick ◽

Bongmook Lee ◽

Xiangyu Yang ◽

Veena Misra

Keyword(s):

Atomic Layer Deposition ◽

Performance Improvement ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Layer Deposition

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Performance enhancement of GaN high electron-mobility transistors with atomic layer deposition Al2O3 passivation

2012 Lester Eastman Conference on High Performance Devices (LEC) ◽

10.1109/lec.2012.6411000 ◽

2012 ◽

Author(s):

Dong Xu ◽

Kanin Chu ◽

J. Diaz ◽

Wenhua Zhu ◽

R. Roy ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Performance Enhancement ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Layer Deposition

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AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Nanoscale Research Letters ◽

10.1186/s11671-017-2082-0 ◽

2017 ◽

Vol 12 (1) ◽

Author(s):

An-Jye Tzou ◽

Kuo-Hsiung Chu ◽

I-Feng Lin ◽

Erik Østreng ◽

Yung-Sheng Fang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Surface Passivation ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Layer Deposition

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