A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors
2001 ◽
Vol 41
(2)
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pp. 169-177
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2002 ◽
Vol 41
(Part 2, No. 5A)
◽
pp. L502-L504
2008 ◽
Vol 47
(3)
◽
pp. 1527-1531
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2011 ◽
Vol 29
(1)
◽
pp. 01AB07
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1994 ◽
Vol 33
(Part 1, No. 1B)
◽
pp. 606-611
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1990 ◽
Vol 29
(Part 2, No. 12)
◽
pp. L2275-L2278
Keyword(s):
1997 ◽
Vol 36
(Part 1, No. 10)
◽
pp. 6175-6180
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2009 ◽
Vol 48
(4)
◽
pp. 04C009
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2012 ◽
Vol 51
(2)
◽
pp. 02BC09
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