Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors of 0.13 µm Technology

Shuang-Yuan Chen; Chia-Hao Tu; Jung-Chun Lin; Mu-Chun Wang; Po-Wei Kao; Memg-Hong Lin; Ssu-Han Wu; Ze-Wei Jhou; Sam Chou; Joe Ko; Heng-Sheng Haung

doi:10.1143/jjap.47.1527

Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors of 0.13 µm Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.1527 ◽

2008 ◽

Vol 47 (3) ◽

pp. 1527-1531 ◽

Cited By ~ 7

Author(s):

Shuang-Yuan Chen ◽

Chia-Hao Tu ◽

Jung-Chun Lin ◽

Mu-Chun Wang ◽

Po-Wei Kao ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Elevated Temperatures ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Degradation

Download Full-text

Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric

Applied Physics Letters ◽

10.1063/1.4791676 ◽

2013 ◽

Vol 102 (7) ◽

pp. 073507 ◽

Cited By ~ 4

Author(s):

Jyun-Yu Tsai ◽

Ting-Chang Chang ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

Szu-Han Ho ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hole Injection ◽

Hot Carrier ◽

High K ◽

Hot Carrier Degradation

Download Full-text

New Observations on Hot-Carrier Degradation in 0.1 µm Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l502 ◽

2002 ◽

Vol 41 (Part 2, No. 5A) ◽

pp. L502-L504

Author(s):

Wen-Kuan Yeh ◽

Wen-Han Wang ◽

Yean-Kuen Fang ◽

Fu-Liang Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Degradation

Download Full-text

A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors

Microelectronics Reliability ◽

10.1016/s0026-2714(00)00210-9 ◽

2001 ◽

Vol 41 (2) ◽

pp. 169-177 ◽

Cited By ~ 4

Author(s):

M.M. De Souza ◽

J. Wang ◽

S. Manhas ◽

E.M. Sankara Narayanan ◽

A.S. Oates

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Early Stage ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Behaviour ◽

Hot Carrier ◽

Hot Carrier Degradation

Download Full-text

Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor of 0.13 µm Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3144 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3144-3146 ◽

Cited By ~ 5

Author(s):

Jung-Chun Lin ◽

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Ze-Wei Jhou ◽

Hung-Chuan Lin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Elevated Temperatures ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Effect Transistor ◽

Hot Carrier Degradation

Download Full-text

Processing dependences of channel hot-carrier degradation on strained-Si p-channel metal-oxide semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3523396 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01AB07 ◽

Cited By ~ 4

Author(s):

E. Amat ◽

J. Martin-Martínez ◽

M. B. Gonzalez ◽

R. Rodríguez ◽

M. Nafría ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Hot Carrier ◽

Hot Carrier Degradation

Download Full-text

Physical Analysis for Saturation Behavior of Hot-Carrier Degradation in Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.606 ◽

1994 ◽

Vol 33 (Part 1, No. 1B) ◽

pp. 606-611 ◽

Cited By ~ 18

Author(s):

Jung-Suk Goo ◽

Hyungsoon Shin ◽

Hyunsang Hwang ◽

Dae-Gwan Kang ◽

Dong-Hyuk Ju

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Analysis ◽

Hot Carrier ◽

Lightly Doped Drain ◽

Hot Carrier Degradation

Download Full-text

Hot-Carrier Degradation Effects Relevant in Real Operation of Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.l2275 ◽

1990 ◽

Vol 29 (Part 2, No. 12) ◽

pp. L2275-L2278

Author(s):

Werner Weber ◽

Qin Wang ◽

Martin Brox ◽

Doris Schmitt-Landsiedel

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Degradation

Download Full-text

Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

Download Full-text

Suppression of Parasitic Bipolar Action and Improvement of Hot-Carrier Reliability in Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted Oxygen) Introducing Recombination Centers near Source Junction

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.6175 ◽

1997 ◽

Vol 36 (Part 1, No. 10) ◽

pp. 6175-6180 ◽

Cited By ~ 4

Author(s):

Toshiaki Tsuchiya ◽

Terukazu Ohno ◽

Satoshi Tazawa ◽

Masaaki Tomizawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Hot Carrier ◽

Recombination Centers

Download Full-text

The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Cited By ~ 5

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

Download Full-text