Effects of coherent ferroelastic domain walls on the thermal conductivity and Kapitza conductance in bismuth ferrite

2013 ◽  
Vol 102 (12) ◽  
pp. 121903 ◽  
Author(s):  
Patrick E. Hopkins ◽  
Carolina Adamo ◽  
Linghan Ye ◽  
Bryan D. Huey ◽  
Stephen R. Lee ◽  
...  
2007 ◽  
Vol 17 (2) ◽  
pp. 1310-1313 ◽  
Author(s):  
Ahmad Aizaz ◽  
Pierre Bauer ◽  
Terry L. Grimm ◽  
Neil T. Wright ◽  
Claire Z. Antoine

2021 ◽  
Vol 63 (6) ◽  
pp. 763
Author(s):  
Р.Г. Митаров ◽  
С.Н. Каллаев ◽  
З.М. Омаров ◽  
О.М. Назарова ◽  
Л.А. Резниченко

The temperature dependence of the heat capacity of the multiferroics BiFeO3, Bi0.90Sm0.10FeO3, and Bi0.90Eu0.10FeO3 has been studied. It was found that the substitution of europium and samarium ions for bismuth ions in bismuth ferrite leads to the appearance of an additional heat capacity component due to transitions of 4f - electrons of rare earth ions to higher levels of the multiplet. A connection is established between the decrease in phonon thermal conductivity and the Schottky effect for the specific heat.


2015 ◽  
Vol 10 (3) ◽  
pp. 209-217 ◽  
Author(s):  
Z. V. Gareeva ◽  
O. Diéguez ◽  
J. Íñiguez ◽  
A. K. Zvezdin
Keyword(s):  

2014 ◽  
Vol 104 (13) ◽  
pp. 132902 ◽  
Author(s):  
I. Stolichnov ◽  
M. Iwanowska ◽  
E. Colla ◽  
B. Ziegler ◽  
I. Gaponenko ◽  
...  

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Kento Kariya ◽  
Takeshi Yoshimura ◽  
Katsuya Ujimoto ◽  
Norifumi Fujimura

AbstractPolarisation domain structure is a microstructure specific to ferroelectrics and plays a role in their various fascinating characteristics. The piezoelectric properties of ferroelectrics are influenced by the domain wall contribution. This study provides a direct observation of the contribution of domain walls to the direct piezoelectric response of bismuth ferrite (BiFeO3) films, which have been widely studied as lead-free piezoelectrics. To achieve this purpose, we developed a scanning probe microscopy-based measurement technique, termed direct piezoelectric response microscopy (DPRM), to observe the domain structure of BiFeO3 films via the direct piezoelectric response. Quantitative analysis of the direct piezoelectric response obtained by DPRM, detailed analysis of the domain structure by conventional piezoelectric force microscopy, and microscopic characterisation of the direct piezoelectric properties of BiFeO3 films with different domain structures revealed that their direct piezoelectric response is enhanced by the walls between the domains of spontaneous polarisation in the same out-of-plane direction.


2016 ◽  
Vol 845 ◽  
pp. 7-12
Author(s):  
Z.V. Gareeva ◽  
A.K. Zvezdin ◽  
T.T. Gareev

In the last decade, considerable attention has been focused on the search of new multiferroic materials and the ways of improvement of their magnetoelectric properties. In this short review, we survey the progress in study of multiferroics focusing the high temperature multiferroic bismuth ferrite and rare earth iron garnets. We discuss the recent results of investigation of domain walls in multiferroics, concentrating the most important magnetoelectric manifestations (electric polarization and magnetization), and the pinning effect appearing as clamping of ferroelectric and magnetic domain walls.


Domain Walls ◽  
2020 ◽  
pp. 340-350
Author(s):  
J. Seidel ◽  
R. Ramesh

This chapter reviews some of the initial developments and recently introduced potential application concepts related to domain walls in ferroelectrics and multiferroics. It gives a special (non-exclusive) focus on the heavily investigated bismuth ferrite BiFeO3 system as one of the rare examples of a single phase room-temperature multiferroic system that can be widely tailored in application relevant epitaxial thin films. Here, DWs as well as other topological structures reveal new ways to novel tailored states of matter with a wide range of electronic properties. Domain wall electronics, particularly with ferroelectrics and multiferroics, provides new nanotechnological concepts for identifying, understanding, and designing new material properties. However, this chapter observes that there has been very little work done on controlling electronic correlations.


Sign in / Sign up

Export Citation Format

Share Document