Electronics Based on Domain Walls

Domain Walls ◽  
2020 ◽  
pp. 340-350
Author(s):  
J. Seidel ◽  
R. Ramesh
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Material Properties ◽  
Domain Walls ◽  
Bismuth Ferrite ◽  
Epitaxial Thin Films ◽  
Wide Range ◽  
New Material ◽  
Work Done ◽  
Exclusive Focus

This chapter reviews some of the initial developments and recently introduced potential application concepts related to domain walls in ferroelectrics and multiferroics. It gives a special (non-exclusive) focus on the heavily investigated bismuth ferrite BiFeO3 system as one of the rare examples of a single phase room-temperature multiferroic system that can be widely tailored in application relevant epitaxial thin films. Here, DWs as well as other topological structures reveal new ways to novel tailored states of matter with a wide range of electronic properties. Domain wall electronics, particularly with ferroelectrics and multiferroics, provides new nanotechnological concepts for identifying, understanding, and designing new material properties. However, this chapter observes that there has been very little work done on controlling electronic correlations.

scholarly journals Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
C. Borderon ◽  
A. E. Brunier ◽  
K. Nadaud ◽  
R. Renoud ◽  
M. Alexe ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Epitaxial Thin Films

Unraveling the Effect of Material Properties and Geometrical Factors on Ballistic Penetration Energy of Nanoscale Thin Films

2018 ◽  
Vol 85 (12) ◽  
Author(s):  
Zhaoxu Meng ◽  
Sinan Keten
Keyword(s):  
Thin Films ◽  
Material Properties ◽  
High Speed ◽  
Coarse Grained ◽  
Geometrical Factor ◽  
Materials Testing ◽  
Multilayer Graphene ◽  
Wide Range ◽  
Geometrical Factors ◽  
Ballistic Penetration

It is crucial to investigate the dynamic mechanical behavior of materials at the nanoscale to create nanostructured protective systems that have superior ballistic impact resistance. Inspired from recent experimental advances that enable ballistic materials testing at small scales, here we report a comparative analysis of the dynamic behavior of nanoscale thin films made from multilayer graphene (MLG), polymer, gold, and aluminum under high-speed projectile impact. We employ atomistic and coarse-grained (CG) molecular dynamics (MD) simulations to measure the ballistic limit velocity (V50) and penetration energy (Ep) of these nanoscale films and investigate their distinctive failure mechanisms over a wide range of impact velocities (Vi). For the local penetration failure mechanism observed in polymer and metal films, we find that the intrinsic mechanical properties influence Ep at low Vi, while material density tends to govern Ep at high Vi. MLG films uniquely show a large impact propagation zone (IPZ), which transfers the highly localized impact energy into elastic deformation energy in a much larger area through cone wave propagation. We present theoretical analyses that corroborate that the size of IPZ should depend not only on material properties but also on a geometrical factor, specifically, the ratio between the projectile radius and film thickness. This study clearly illustrates how material properties and geometrical factors relate to the ballistic penetration energy, thereby allowing a quantitative comparison of the nanoscale ballistic response of different materials.

Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires

SPIN ◽  
2019 ◽  
Vol 09 (01) ◽  
pp. 1950004
Author(s):  
Jingchun Wang ◽  
Floriano Cuccureddu ◽  
Rafael Ramos ◽  
Cormac Ó. Coileáin ◽  
Igor V. Shvets ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Exchange Interaction ◽  
Exchange Bias ◽  
Room Temperature ◽  
Domain Walls ◽  
Nanowire Array ◽  
Bias Field ◽  
Nanowire Arrays ◽  
Exchange Bias Field

We present the possibility of enhancing magnetoresistance (MR) by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on [Formula: see text]-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature. compared with flat and stepped Fe3O4 thin films.

scholarly journals Temperature dependence of three-dimensional domain wall arrangement in ferroelectric K0.9Na0.1NbO3 epitaxial thin films

2020 ◽  
Vol 128 (18) ◽  
pp. 184101
Author(s):  
Martin Schmidbauer ◽  
Laura Bogula ◽  
Bo Wang ◽  
Michael Hanke ◽  
Leonard von Helden ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Temperature Dependence ◽  
Three Dimensional ◽  
Epitaxial Thin Films ◽  
Dimensional Domain

scholarly journals Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films

2012 ◽  
Vol 101 (7) ◽  
pp. 072402 ◽  
Author(s):  
D. E. Parkes ◽  
S. A. Cavill ◽  
A. T. Hindmarch ◽  
P. Wadley ◽  
F. McGee ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Voltage Control ◽  
Epitaxial Thin Films ◽  
Magnetic Domain Walls

scholarly journals Strain And Symmetry-induced Structural Transitions in Ultra-thin BiFeO3 Films

2014 ◽  
Vol 70 (a1) ◽  
pp. C1610-C1610
Author(s):  
Christian Schlepuetz ◽  
Yongsoo Yang ◽  
Nancy Senabulya ◽  
Carolina Adamo ◽  
Christianne Beekman ◽  
...  
Keyword(s):  
Thin Films ◽  
Spontaneous Polarization ◽  
Bismuth Ferrite ◽  
Compressive Strain ◽  
Department Of Energy ◽  
Epitaxial Thin Films ◽  
Pixel Detector ◽  
Reciprocal Space Mapping ◽  
Out Of Plane ◽  
Unit Cells

As one of very few room temperature multiferroic materials, bismuth ferrite (BiFeO3: BFO) has been studied extensively in recent years. The bulk form of BFO is known to have a rhombohedrally distorted quasi-cubic perovskite structure with an (a–,a–,a–) octahedral tilt pattern, exhibiting both anti-ferrodistortive displacements and a spontaneous polarization along the <111> axes. Investigating epitaxial thin films under compressive strain, several studies have reported that the polarization direction is tilted towards the [001] out-of-plane direction, while maintaining a significant in-plane component. This effect is accompanied by a significant enhancement of the spontaneous polarization and a series of phase transitions from rhombohedral (R) for small strains to R-like monoclinic (MA) to T-like monoclinic (MC) and to tetragonal (T) for larger strains [1]. Through synchrotron-based 3-dimensional reciprocal space mapping (RSM), facilitated by using X-ray area detectors (Pilatus 100K pixel detector), we have investigated the structure of ultra-thin BFO films grown on SrTiO3 (STO), LaAlO3 (LAO), and TbScO3 (TSO) substrates with thicknesses of only several unit cells. In this thickness regime, the influence of the substrate atomic structure on the properties of the ultra-thin films is very pronounced, and the films exhibit perfect heteroepitaxy up to a critical thickness when the build up of strain energy forces the films into a relaxed structure. Both on STO [2] and LAO, the ultra-thin BFO undergoes a monoclinic to tetragonal phase transition, but with very different c/a axis ratios. On TSO, a very pronounced and well-ordered stripe domainstructure evolves where the domain sizes are strongly thickness- dependent. Argonne National Laboratory's work was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under contract DE-AC02-06CH11357.

scholarly journals Anomalous Hall effect in Fe (001) epitaxial thin films over a wide range in conductivity

2009 ◽  
Vol 79 (1) ◽  
Author(s):  
S. Sangiao ◽  
L. Morellon ◽  
G. Simon ◽  
J. M. De Teresa ◽  
J. A. Pardo ◽  
...  
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Epitaxial Thin Films ◽  
Wide Range

Fe3O4 Epitaxial Thin Films and Heterostructures: Magnetotransport and Magnetic Properties

2010 ◽  
Vol 67 ◽  
pp. 82-91 ◽  
Author(s):  
Julia Orna ◽  
Luis Morellón ◽  
Pedro Algarabel ◽  
José M. De Teresa ◽  
Amalio Fernández-Pacheco ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Moment ◽  
Epitaxial Films ◽  
Epitaxial Thin Films ◽  
Magnetic Characterization ◽  
Hall Effects ◽  
Wide Range ◽  
Epitaxial Heterostructures

In this article, we review our recent research on Fe3O4 epitaxial thin films and Fe3O4/MgO/Fe epitaxial heterostructures. More specifically, we report on the magnetotransport properties of Fe3O4 epitaxial films in a wide range of film thicknesses and temperatures, focusing on the anomalous, planar and ordinary Hall effects. We also summarize our insight on the origin of the enhanced magnetic moment found in ultra-thin magnetite films (thickness t < 5 nm). Finally, our work on the growth, and structural and magnetic characterization of heteroepitaxial Fe3O4/MgO/Fe trilayers is presented.

scholarly journals Enabling the multifunctionality of thin films through complex engineered nanoscale phases/nanodomains

2019 ◽  
Vol 1 (1) ◽  
pp. 47-47
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Chemical Stability ◽  
Bismuth Ferrite ◽  
Strain Engineering ◽  
Dielectric Susceptibility ◽  
Epitaxial Thin Films ◽  
Low Dielectric ◽  
Small Band ◽  
High Dielectric

BiFeO3 is one of the most promising multiferroic material exhibiting, however, drawbacks as low dielectric susceptibility, poor chemical stability and high dielectric loss. Recently, we have demonstrated that joining doping and epitaxial strain engineering a nanoscale stripe structure was induced, resulting in a significant improvement of the dielectric characteristics. By high resolution transmission electron microscopy (HR-TEM) we have evidenced nanostripe domains with alternating compressive and tensile strain in the Y-doped BiFeO3 epitaxial thin films. Small band gap values of bismuth ferrite (BFO) have triggered the interest due to the photovoltaic and photocatalytic potential, for pure or cation doped BFO. However, energy related properties of BiFeO3 can be improved by coupling the strong ferroelectricity of BFO with chemical stability and small band gap value of LaFeO3 within thickness graded heterostructures. Thin films of BFO on 5-20 nm thick epitaxial LFO films deposited on different strain-induced substrates, have been obtained by RHEED- assisted Pulsed Laser Deposition. Their functional dielectric, optical and photolytic behaviour has been unravelled in connexion with complex ensembles of nanoscale phase/nanodomain fluctuations within the epitaxial films.

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