Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4815923 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033524 ◽

Author(s):

Yuhao Zhang ◽

Min Sun ◽

Sameer J. Joglekar ◽

Tatsuya Fujishima ◽

Tomás Palacios

Keyword(s):

Threshold Voltage ◽

High Electron Mobility Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gate Oxide Thickness

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Control of Threshold Voltage in GaN Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.08jn08 ◽

2013 ◽

Vol 52 (8S) ◽

pp. 08JN08 ◽

Author(s):

Milan Ťapajna ◽

Ján Kuzmík

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Threshold Voltage Engineering of Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Different Doping Concentration of In Situ Cl— Doped Al2O3

ECS Journal of Solid State Science and Technology ◽

10.1149/2162-8777/ac12b7 ◽

2021 ◽

Author(s):

Han-Yin Liu ◽

Chih-Wei Lin ◽

Ching-Sung Lee ◽

Wei-Chou Hsu

Keyword(s):

Threshold Voltage ◽

Doping Concentration ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors

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Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates

Thin Solid Films ◽

10.1016/j.tsf.2012.05.073 ◽

2012 ◽

Vol 520 (19) ◽

pp. 6230-6232 ◽

Author(s):

A. Alexewicz ◽

C. Ostermaier ◽

C. Henkel ◽

O. Bethge ◽

J.-F. Carlin ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

Enhancement Mode ◽

Electron Mobility Transistors

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Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Journal of Applied Physics ◽

10.1063/1.5000497 ◽

2017 ◽

Vol 122 (22) ◽

pp. 224504 ◽

Author(s):

M. Matys ◽

S. Kaneki ◽

K. Nishiguchi ◽

B. Adamowicz ◽

T. Hashizume

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Applied Physics Letters ◽

10.1063/1.4795717 ◽

2013 ◽

Vol 102 (10) ◽

pp. 103504 ◽

Author(s):

X. Sun ◽

O. I. Saadat ◽

K. S. Chang-Liao ◽

T. Palacios ◽

S. Cui ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4959786 ◽

2016 ◽

Vol 34 (5) ◽

pp. 051202 ◽

Author(s):

Shihyun Ahn ◽

Byung-Jae Kim ◽

Yi-Hsuan Lin ◽

Fan Ren ◽

Stephen J. Pearton ◽

...

Keyword(s):

Electron Mobility ◽

Irradiation Dose ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.3694768 ◽

2012 ◽

Vol 100 (11) ◽

pp. 113509 ◽

Author(s):

M. Ťapajna ◽

J. Kuzmík

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

Applied Physics Letters ◽

10.1063/1.1567051 ◽

2003 ◽

Vol 82 (15) ◽

pp. 2530-2532 ◽

Author(s):

R. Mehandru ◽

B. Luo ◽

J. Kim ◽

F. Ren ◽

B. P. Gila ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Surface Passivation ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.5044590 ◽

2018 ◽

Vol 124 (16) ◽

pp. 165704 ◽

Author(s):

Jaya Jha ◽

Bhanu B. Upadhyay ◽

Kuldeep Takhar ◽

Navneet Bhardwaj ◽

Swaroop Ganguly ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Carrier Trapping ◽

Electron Mobility Transistors ◽

Field Dependent

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Metal Oxide Semiconductor High Electron Mobility Transistors

Handbook for III-V High Electron Mobility Transistor Technologies ◽

10.1201/9780429460043-15 ◽

2019 ◽

pp. 391-402 ◽

Author(s):

D. K. Panda ◽

G. Amarnath ◽

T. R. Lenka

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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