Threshold Voltage Engineering of Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Different Doping Concentration of In Situ Cl— Doped Al2O3

ECS Journal of Solid State Science and Technology ◽

10.1149/2162-8777/ac12b7 ◽

2021 ◽

Author(s):

Han-Yin Liu ◽

Chih-Wei Lin ◽

Ching-Sung Lee ◽

Wei-Chou Hsu

Keyword(s):

Threshold Voltage ◽

Doping Concentration ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors

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Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates

Thin Solid Films ◽

10.1016/j.tsf.2012.05.073 ◽

2012 ◽

Vol 520 (19) ◽

pp. 6230-6232 ◽

Author(s):

A. Alexewicz ◽

C. Ostermaier ◽

C. Henkel ◽

O. Bethge ◽

J.-F. Carlin ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

Enhancement Mode ◽

Electron Mobility Transistors

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Control of Threshold Voltage in GaN Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.08jn08 ◽

2013 ◽

Vol 52 (8S) ◽

pp. 08JN08 ◽

Author(s):

Milan Ťapajna ◽

Ján Kuzmík

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors

AIP Advances ◽

10.1063/1.5022029 ◽

2018 ◽

Vol 8 (4) ◽

pp. 045014 ◽

Author(s):

Ching-Ting Lee ◽

Chun-Chi Wang

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors

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Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Journal of Applied Physics ◽

10.1063/1.5000497 ◽

2017 ◽

Vol 122 (22) ◽

pp. 224504 ◽

Author(s):

M. Matys ◽

S. Kaneki ◽

K. Nishiguchi ◽

B. Adamowicz ◽

T. Hashizume

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Impact of In situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

Applied Physics Letters ◽

10.1063/1.3633104 ◽

2011 ◽

Vol 99 (9) ◽

pp. 093504 ◽

Author(s):

Xinke Liu ◽

Edwin Kim Fong Low ◽

Jisheng Pan ◽

Wei Liu ◽

Kie Leong Teo ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

Electrical Characteristics ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.3694768 ◽

2012 ◽

Vol 100 (11) ◽

pp. 113509 ◽

Author(s):

M. Ťapajna ◽

J. Kuzmík

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Integrated Monolithic Inverter Using Gate-Recessed GaN-Based Enhancement-Mode and Depletion-Mode Metal-Oxide-Semiconductor High-Electron Mobility Transistors

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0121710jss ◽

2017 ◽

Vol 6 (10) ◽

pp. Q123-Q126 ◽

Author(s):

Ching-Ting Lee ◽

Hsin-Ying Lee ◽

Jhe-Hao Chang

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors

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Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4815923 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033524 ◽

Author(s):

Yuhao Zhang ◽

Min Sun ◽

Sameer J. Joglekar ◽

Tatsuya Fujishima ◽

Tomás Palacios

Keyword(s):

Threshold Voltage ◽

High Electron Mobility Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gate Oxide Thickness

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Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric

Applied Physics Letters ◽

10.1063/1.2814052 ◽

2007 ◽

Vol 91 (21) ◽

pp. 212101 ◽

Author(s):

H. C. Lin ◽

T. Yang ◽

H. Sharifi ◽

S. K. Kim ◽

Y. Xuan ◽

...

Keyword(s):

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors

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GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO3 Ferroelectric Insulator on Gate-Recessed Structure

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2446990 ◽

2015 ◽

Vol 62 (8) ◽

pp. 2481-2487 ◽

Author(s):

Ching-Ting Lee ◽

Chang-Lin Yang ◽

Chun-Yen Tseng ◽

Jhe-Hao Chang ◽

Ray-Hua Horng

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors

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