scholarly journals Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells

AIP Advances ◽  
2013 ◽  
Vol 3 (7) ◽  
pp. 072111 ◽  
Author(s):  
Qi Wang ◽  
Zhigang Jia ◽  
Xiaomin Ren ◽  
Yingce Yan ◽  
Zhiqiang Bian ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Properties ◽  
Highly Strained

Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells

1987 ◽  
Vol 62 (8) ◽  
pp. 3366-3373 ◽  
Author(s):  
G. Ji ◽  
D. Huang ◽  
U. K. Reddy ◽  
T. S. Henderson ◽  
R. Houdré ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Investigation ◽  
Highly Strained

Realization of sharp excitonic features in highly strained GaAs/InxGa1−xAs multiple quantum wells grown on GaAs(100) substrates

1991 ◽  
Vol 111 (1-4) ◽  
pp. 424-428
Author(s):  
Li Chen ◽  
K.C. Rajkumar ◽  
A. Madhukar ◽  
Wei Chen ◽  
S. Guha ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Highly Strained
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