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Controlled improvement in specific contact resistivity for thermoelectric materials by ion implantation
Applied Physics Letters
◽
10.1063/1.4816054
◽
2013
◽
Vol 103
(4)
◽
pp. 043902
◽
Cited By ~ 18
Author(s):
Patrick J. Taylor
◽
Jay R. Maddux
◽
Greg Meissner
◽
Rama Venkatasubramanian
◽
Gary Bulman
◽
...
Keyword(s):
Ion Implantation
◽
Thermoelectric Materials
◽
Contact Resistivity
◽
Specific Contact
◽
Specific Contact Resistivity
Download Full-text
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Cited By
References
Sub-$10^{-9}\ \Omega-\text{cm}^{2}$ Specific Contact Resistivity on P-type Ge and GeSn: In-situ Ga Doping with Ga Ion Implantation at 300 °C, 25 °C, and −100 °C
2018 IEEE International Electron Devices Meeting (IEDM)
◽
10.1109/iedm.2018.8614619
◽
2018
◽
Author(s):
Ying Wu
◽
Lye-Hing Chua
◽
Wei Wang
◽
Kaizhen Han
◽
Wei Zou
◽
...
Keyword(s):
Ion Implantation
◽
Contact Resistivity
◽
Specific Contact
◽
Specific Contact Resistivity
◽
P Type
◽
Ga Doping
Download Full-text
Effects of film thickness and annealing temperature on the specific contact resistivity and the transmittance of the IZO Layers Grown on p-GaN by Roll-to-roll Sputtering
Korean Journal of Metals and Materials
◽
10.3365/kjmm.2010.48.06.565
◽
2010
◽
Vol 48
(6)
◽
Keyword(s):
Film Thickness
◽
Annealing Temperature
◽
Contact Resistivity
◽
Roll To Roll
◽
Specific Contact
◽
Specific Contact Resistivity
Download Full-text
Current crowding effects and determination of specific contact resistivity from contact end resistance (CER) measurements
IEEE Electron Device Letters
◽
10.1109/edl.1985.26259
◽
1985
◽
Vol 6
(12)
◽
pp. 639-641
◽
Cited By ~ 9
Author(s):
S.E. Swirhun
◽
W.M. Loh
◽
R.M. Swanson
◽
K.C. Saraswat
Keyword(s):
Contact Resistivity
◽
Current Crowding
◽
Crowding Effects
◽
Specific Contact
◽
Specific Contact Resistivity
Download Full-text
Metal/P-type GeSn Contacts with Specific Contact Resistivity down to 4.4×10−10 Ω-cm2
2018 IEEE Symposium on VLSI Technology
◽
10.1109/vlsit.2018.8510661
◽
2018
◽
Author(s):
Ying Wu
◽
Wei Wang
◽
Saeid Masudy-Panah
◽
Yang Li
◽
Kaizhen Han
◽
...
Keyword(s):
Contact Resistivity
◽
Specific Contact
◽
Specific Contact Resistivity
◽
P Type
Download Full-text
A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity—Part II: Experimental Verification
IEEE Transactions on Electron Devices
◽
10.1109/ted.2020.2997313
◽
2020
◽
Vol 67
(7)
◽
pp. 2690-2696
Author(s):
Haiwen Xu
◽
Ying Wu
◽
Yee-Chia Yeo
◽
Xiao Gong
Keyword(s):
Transmission Line
◽
Experimental Verification
◽
Contact Resistivity
◽
Transmission Line Model
◽
Line Model
◽
Specific Contact
◽
Specific Contact Resistivity
Download Full-text
Record low specific contact resistivity (1.2×10−9 Ω-cm2) for P-type semiconductors: Incorporation of Sn into Ge and in-Situ Ga doping
2017 Symposium on VLSI Technology
◽
10.23919/vlsit.2017.7998178
◽
2017
◽
Cited By ~ 2
Author(s):
Ying Wu
◽
Sheng Luo
◽
Wei Wang
◽
Saeid Masudy-Panah
◽
Dian Lei
◽
...
Keyword(s):
Contact Resistivity
◽
Specific Contact
◽
Specific Contact Resistivity
◽
P Type
◽
Ga Doping
Download Full-text
Ultralow Specific Contact Resistivity in Metal–Graphene Junctions via Contact Engineering
Advanced Materials Interfaces
◽
10.1002/admi.201801285
◽
2018
◽
Vol 6
(1)
◽
pp. 1801285
◽
Cited By ~ 13
Author(s):
Vikram Passi
◽
Amit Gahoi
◽
Enrique G. Marin
◽
Teresa Cusati
◽
Alessandro Fortunelli
◽
...
Keyword(s):
Contact Resistivity
◽
Specific Contact
◽
Specific Contact Resistivity
◽
Contact Engineering
Download Full-text
Metrological aspects of studying the specific contact resistivity of ohmic contacts by using the four-contact method
Semiconductor Physics Quantum Electronics & Optoelectronics
◽
10.15407/spqeo17.04.394
◽
2014
◽
Vol 17
(4)
◽
pp. 394-397
Author(s):
V.N. Sheremet
◽
Keyword(s):
Ohmic Contacts
◽
Contact Resistivity
◽
Contact Method
◽
Specific Contact
◽
Specific Contact Resistivity
Download Full-text
A new procedure to extract ultra-low specific contact resistivity
2012 IEEE International Interconnect Technology Conference
◽
10.1109/iitc.2012.6251584
◽
2012
◽
Cited By ~ 2
Author(s):
Hsuan-Tzu Tseng
◽
Bing-Yue Tsui
Keyword(s):
Contact Resistivity
◽
Specific Contact
◽
Specific Contact Resistivity
Download Full-text
Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process
Chinese Physics B
◽
10.1088/1674-1056/25/11/118101
◽
2016
◽
Vol 25
(11)
◽
pp. 118101
Author(s):
Shu-Zhen Yu
◽
Yan Song
◽
Jian-Rong Dong
◽
Yu-Run Sun
◽
Yong-Ming Zhao
◽
...
Keyword(s):
Annealing Process
◽
Contact Resistivity
◽
Specific Contact
◽
Specific Contact Resistivity
Download Full-text
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