Sub-$10^{-9}\ \Omega-\text{cm}^{2}$ Specific Contact Resistivity on P-type Ge and GeSn: In-situ Ga Doping with Ga Ion Implantation at 300 °C, 25 °C, and −100 °C

2018 ◽  
Author(s):  
Ying Wu ◽  
Lye-Hing Chua ◽  
Wei Wang ◽  
Kaizhen Han ◽  
Wei Zou ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Contact Resistivity ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type ◽  
Ga Doping

Metal/P-type GeSn Contacts with Specific Contact Resistivity down to 4.4×10−10 Ω-cm2

2018 ◽  
Author(s):  
Ying Wu ◽  
Wei Wang ◽  
Saeid Masudy-Panah ◽  
Yang Li ◽  
Kaizhen Han ◽  
...  
Keyword(s):  
Contact Resistivity ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type

Controlled improvement in specific contact resistivity for thermoelectric materials by ion implantation

2013 ◽  
Vol 103 (4) ◽  
pp. 043902 ◽  
Author(s):  
Patrick J. Taylor ◽  
Jay R. Maddux ◽  
Greg Meissner ◽  
Rama Venkatasubramanian ◽  
Gary Bulman ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermoelectric Materials ◽  
Contact Resistivity ◽  
Specific Contact ◽  
Specific Contact Resistivity

Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40°C to 500°C

2014 ◽  
Vol 778-780 ◽  
pp. 681-684 ◽  
Author(s):  
Katarina Smedfors ◽  
Luigia Lanni ◽  
Mikael Östling ◽  
Carl Mikael Zetterling
Keyword(s):  
Extreme Temperature ◽  
Contact Resistivity ◽  
Temperature Measurements ◽  
Time Increase ◽  
Operational Temperature ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type ◽  
Type Nickel

Extreme temperature measurements of Ni/Ti/Al contacts to p-type SiC (Na= 1∙1018cm-3), with a specific contact resistivity ρc= 6.75∙10-4Ωcm2at 25 °C, showed a five time increase of the specific contact resistivity at -40 °C (ρc= 3.16∙10-3Ωcm2), and a reduction by almost a factor 10 at 500 °C (ρc= 7.49∙10-5Ωcm2). The same response of ρcto temperature was seen for contacts on lower doped epitaxial layer. Also N-type nickel contacts improved with higher operational temperature but with a considerably smaller variation over the same temperature interval. No degradation of the performance was seen to either the Ni/Ti/Al or the Ni contacts due to the high temperature measurements.

scholarly journals Using a two-contact circular test structure to determine the specific contact resistivity of contacts to bulk semiconductors

2015 ◽  
Vol 28 (3) ◽  
pp. 457-464
Author(s):  
Aaron Collins ◽  
Yue Pan ◽  
Anthony Holland
Keyword(s):  
Three Dimensional ◽  
Contact Resistivity ◽  
Test Structure ◽  
Contact Structures ◽  
Experimental Measurements ◽  
Circular Test ◽  
Bulk Semiconductors ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type

We present a numerical method to extract specific contact resistivity (SCR) for three-dimensional (3-D) contact structures using a two-electrode test structure. This method was developed using Finite Element Modeling (FEM). Experimental measurements were performed for contacts of 200 nm nickel (Ni) to p+-type germanium (Ge) substrates and 200 nm of Titanium (Ti) on 4H-Silicon Carbide (SiC). The SCR obtained was (2.3-27)?10-6 ??cm2 for the Ni-Ge contacts and (1.3-2.4)?10-3 ??cm2 for the Ti-SiC.

Low Resistance Contacts to P-Type GaN

1997 ◽  
Vol 468 ◽  
Author(s):  
Taek Kim ◽  
Jinseok Khim ◽  
Suhee Chae ◽  
Taeil Kim
Keyword(s):  
Vapor Deposition ◽  
Ohmic Contacts ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Contact Resistivity ◽  
Low Resistance ◽  
Sapphire Substrates ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type

ABSTRACTWe report the low resistance ohmic contacts to p-GaN using a Pd/Au bimetal scheme. A specific contact resistivity of 9.1 × 10-3 Ω-cm2 was obtained after annealing. The metallization was e-beam evaporated on 2 μm-thick p-GaN (∼ 9 × 1016/cm3) layers grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The comparison with other contacts showed that the contact resistivity of the Pd/Au contacts was at least one order smaller than those of Pt/Au and Ni/Au contacts.

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