The effects of thin capping layers between quantum wells and barriers on the quantum efficiency enhancement in InGaN-based light emitting diodes

2013 ◽  
Vol 103 (11) ◽  
pp. 111103 ◽  
Author(s):  
X. Li ◽  
Yea-Chuan Milton Yeh ◽  
S. L. Yang ◽  
J. C. Chen ◽  
Chih-Li Chuang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Efficiency Enhancement ◽  
Light Emitting

scholarly journals Record High External Quantum Efficiency of 19.2% Achieved in Light-Emitting Diodes of Colloidal Quantum Wells Enabled by Hot-Injection Shell Growth

2019 ◽  
Author(s):  
Baiquan Liu ◽  
Yemliha Altintas ◽  
Lin Wang ◽  
Sushant Shendre ◽  
Manoj Sharma ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Shell Growth ◽  
Light Emitting ◽  
Hot Injection ◽  
Key Factor

<p> Colloidal quantum wells (CQWs) are regarded as a new, highly promising class of optoelectronic materials thanks to their unique excitonic characteristics of high extinction coefficient and ultranarrow emission bandwidth. Although the exploration of CQWs in light-emitting diodes (LEDs) is impressive, the performance of CQW-LEDs lags far behind compared with other types of LEDs (e.g., organic LEDs, colloidal quantum-dot LEDs, and perovskite LEDs). Herein, for the first time, the authors show high-efficiency CQW-LEDs reaching close to the theoretical limit. A key factor for this high performance is the exploitation of hot-injection shell (HIS) growth of CQWs, which enables a near-unity photoluminescence quantum yield (PLQY), reduces nonradiative channels, ensures smooth films and enhances the stability. Remarkably, the PLQY remains 95% in solution and 87% in film despite rigorous cleaning. Through systematically understanding their shape-, composition- and device- engineering, the CQW-LEDs using CdSe/Cd<sub>0.25</sub>Zn<sub>0.75</sub>S core/HIS CQWs exhibit a maximum external quantum efficiency of 19.2%. Additionally, a high luminance of 23,490 cd m<sup>-2</sup>, extremely saturated red color with the Commission Internationale de L’Eclairage coordinates of (0.715, 0.283) and stable emission are obtained. The findings indicate that HIS grown CQWs enable high-performance solution-processed LEDs, which may pave the path for CQW-based display and lighting technologies.</p>

High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells

2020 ◽  
Vol 8 (3) ◽  
pp. 883-888 ◽  
Author(s):  
Yuan Li ◽  
Zhiheng Xing ◽  
Yulin Zheng ◽  
Xin Tang ◽  
Wentong Xie ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Multiple Quantum ◽  
High Quantum Efficiency ◽  
Light Emitting ◽  
Si Substrates

High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.

The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells

1998 ◽  
Vol 3 ◽  
Author(s):  
A. E. Yunovich ◽  
V. E. Kudryashov ◽  
A. N. Turkin ◽  
A. Kovalev ◽  
F. Manyakhin
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Luminescence Spectra ◽  
Multiple Quantum ◽  
Tunnel Current ◽  
High Quantum Efficiency ◽  
Light Emitting ◽  
Low Probability

Luminescence spectra of Light Emitting Diodes (LEDs) with Multiple Quantum Wells (MQWs) were studied at currents J = 0.15 μA - 150 mA. A high quantum efficiency at low J is caused by a low probability of the tunnel current J (which is maximum at Jm ≈ 0.5-1.0 mA). J(V) curves were measured in the range J= 10−12-10−1 A; at J > 10−3A they may be approximated by a sum of four parts: V= φk+ mkT·[ln(J/J0)+(J/J1)0.5] + J·Rs. The part V ~ (J/J1)0.5is the evidence of a double-injection into i-layers near MQWs. Their presence is confirmed by capacitance measurements. An overflow of carriers through the MQW causes a lower quantum efficiency at high J. A model of a 2D-density of states with exponential tails fits the spectra. The value of T in the active layer was estimated. A new band was detected at high J; it can be caused by non-uniformity of In content in MQWs.

scholarly journals Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

2011 ◽  
Vol 19 (S4) ◽  
pp. A991 ◽  
Author(s):  
Hongping Zhao ◽  
Guangyu Liu ◽  
Jing Zhang ◽  
Jonathan D. Poplawsky ◽  
Volkmar Dierolf ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting

scholarly journals Record High External Quantum Efficiency of 19.2% Achieved in Light-Emitting Diodes of Colloidal Quantum Wells Enabled by Hot-Injection Shell Growth

2019 ◽  
Author(s):  
Baiquan Liu ◽  
Yemliha Altintas ◽  
Lin Wang ◽  
Sushant Shendre ◽  
Manoj Sharma ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Shell Growth ◽  
Light Emitting ◽  
Hot Injection ◽  
Key Factor

<p> Colloidal quantum wells (CQWs) are regarded as a new, highly promising class of optoelectronic materials thanks to their unique excitonic characteristics of high extinction coefficient and ultranarrow emission bandwidth. Although the exploration of CQWs in light-emitting diodes (LEDs) is impressive, the performance of CQW-LEDs lags far behind compared with other types of LEDs (e.g., organic LEDs, colloidal quantum-dot LEDs, and perovskite LEDs). Herein, for the first time, the authors show high-efficiency CQW-LEDs reaching close to the theoretical limit. A key factor for this high performance is the exploitation of hot-injection shell (HIS) growth of CQWs, which enables a near-unity photoluminescence quantum yield (PLQY), reduces nonradiative channels, ensures smooth films and enhances the stability. Remarkably, the PLQY remains 95% in solution and 87% in film despite rigorous cleaning. Through systematically understanding their shape-, composition- and device- engineering, the CQW-LEDs using CdSe/Cd<sub>0.25</sub>Zn<sub>0.75</sub>S core/HIS CQWs exhibit a maximum external quantum efficiency of 19.2%. Additionally, a high luminance of 23,490 cd m<sup>-2</sup>, extremely saturated red color with the Commission Internationale de L’Eclairage coordinates of (0.715, 0.283) and stable emission are obtained. The findings indicate that HIS grown CQWs enable high-performance solution-processed LEDs, which may pave the path for CQW-based display and lighting technologies.</p>

Spectra and Quantum Efficiency of Light-Emitting Diodes Based on GaN Heterostructures with Quantum Wells

1999 ◽  
Vol 176 (1) ◽  
pp. 125-130 ◽  
Author(s):  
A. E. Yunovich ◽  
V. E. Kudryashov ◽  
S. S. Mamakin ◽  
A. N. Turkin ◽  
A. N. Kovalev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting
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