Optimization of tunneling magnetoresistance of MgO based tunnel junctions by tuning the stage impedance for radio frequency sputtering of the barrier

2013 ◽  
Vol 103 (23) ◽  
pp. 232404 ◽  
Author(s):  
C. Kaiser ◽  
D. Maddex ◽  
M. Pakala ◽  
Q. Leng
Keyword(s):  
Radio Frequency ◽  
Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Radio Frequency Sputtering

Effects of the radio-frequency sputtering power of an MgO tunneling barrier on the tunneling magneto-resistance ratio for Co2Fe6B2/MgO-based perpendicular-magnetic tunnel junctions

2016 ◽  
Vol 4 (1) ◽  
pp. 135-141 ◽  
Author(s):  
Du-Yeong Lee ◽  
Hyung-Tak Seo ◽  
Jea-Gun Park
Keyword(s):  
Radio Frequency ◽  
Tunnel Junctions ◽  
Rf Sputtering ◽  
Resistance Ratio ◽  
Spin Valves ◽  
Ex Situ ◽  
Tunneling Barrier ◽  
Radio Frequency Sputtering ◽  
Sputtering Power ◽  
Magneto Resistance

For Co2Fe6B2–MgO based p-MTJ spin valves with [Co/Pt]n–SyAF layers ex situ annealed at 350 °C and 30 kOe for 30 min, the tunneling magneto-resistance (TMR) ratio strongly depended on the radio-frequency (RF) sputtering power in a 0.65–1.15 nm thick MgO tunneling barrier, achieving a TMR ratio of 168% at 300 W.

scholarly journals Surface acoustic wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions

2021 ◽  
Vol 130 (3) ◽  
pp. 033901
Author(s):  
Dhritiman Bhattacharya ◽  
Peng Sheng ◽  
Md Ahsanul Abeed ◽  
Zhengyang Zhao ◽  
Hongshi Li ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Wave Induced

MAGNETORESISTANCE IN Fe/MgO/Fe MAGNETIC TUNNEL JUNCTIONS

2007 ◽  
Vol 17 (03) ◽  
pp. 593-598 ◽  
Author(s):  
N. N. BELETSKII ◽  
S. A. BORYSENKO ◽  
V. M. YAKOVENKO ◽  
G. P. BERMAN ◽  
S. A. WOLF
Keyword(s):  
Current Density ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Electron Current ◽  
Ferromagnetic Electrode ◽  
Electron Current Density

The magnetoresistance of Fe/MgO/Fe magnetic tunnel junctions (MTJs) was studied taking into consideration image forces. For MTJs with an MgO insulator, explanations are given of the giant tunneling magnetoresistance (TMR) effect and the effect of the increasing TMR with an increase in MgO insulator thickness. It is demonstrated that the electron current density through MTJs can be high enough to switch the magnetization of a ferromagnetic electrode.

Annealing Effects on Cathodoluminescence Properties of SiOxFilms Deposited by Radio Frequency Sputtering

2011 ◽  
Vol 50 ◽  
pp. 01BF04 ◽  
Author(s):  
Ahmed Mohamed Ahmed Abd El-Razek Shamekh ◽  
Norio Tokuda ◽  
Takao Inokuma
Keyword(s):  
Radio Frequency ◽  
Radio Frequency Sputtering ◽  
Annealing Effects
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